CA961169A - Single-electrode charge-coupled random access memory cell with impurity implanted gate region - Google Patents
Single-electrode charge-coupled random access memory cell with impurity implanted gate regionInfo
- Publication number
- CA961169A CA961169A CA145,628A CA145628A CA961169A CA 961169 A CA961169 A CA 961169A CA 145628 A CA145628 A CA 145628A CA 961169 A CA961169 A CA 961169A
- Authority
- CA
- Canada
- Prior art keywords
- memory cell
- random access
- access memory
- gate region
- impurity implanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/335—Channel regions of field-effect devices of charge-coupled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15990771A | 1971-07-06 | 1971-07-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA961169A true CA961169A (en) | 1975-01-14 |
Family
ID=22574617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA145,628A Expired CA961169A (en) | 1971-07-06 | 1972-06-26 | Single-electrode charge-coupled random access memory cell with impurity implanted gate region |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5145946B1 (enrdf_load_stackoverflow) |
| CA (1) | CA961169A (enrdf_load_stackoverflow) |
| CH (1) | CH548086A (enrdf_load_stackoverflow) |
| DE (1) | DE2232756C2 (enrdf_load_stackoverflow) |
| ES (1) | ES404185A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2144904B1 (enrdf_load_stackoverflow) |
| IT (1) | IT956844B (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3916394A (en) * | 1974-12-09 | 1975-10-28 | Honeywell Inf Systems | High-speed random access memory |
| DE2842588A1 (de) * | 1978-09-29 | 1980-04-17 | Siemens Ag | Hochintegrierbares, dynamisches speicherelement |
| JPS55113359A (en) * | 1979-02-22 | 1980-09-01 | Fujitsu Ltd | Semiconductor integrated circuit device |
| JPS59140811U (ja) * | 1983-03-12 | 1984-09-20 | 南 猛 | コンクリ−トミキサ− |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1329220A (en) * | 1969-08-11 | 1973-09-05 | California Inst Of Techn | Stored charge device |
-
1972
- 1972-06-23 ES ES404185A patent/ES404185A1/es not_active Expired
- 1972-06-26 CA CA145,628A patent/CA961169A/en not_active Expired
- 1972-06-27 IT IT26236/72A patent/IT956844B/it active
- 1972-06-28 CH CH972872A patent/CH548086A/xx not_active IP Right Cessation
- 1972-06-30 FR FR7224819*A patent/FR2144904B1/fr not_active Expired
- 1972-07-04 DE DE2232756A patent/DE2232756C2/de not_active Expired
- 1972-07-05 JP JP47066774A patent/JPS5145946B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2144904B1 (enrdf_load_stackoverflow) | 1975-09-05 |
| CH548086A (de) | 1974-04-11 |
| JPS5145946B1 (enrdf_load_stackoverflow) | 1976-12-06 |
| DE2232756A1 (de) | 1973-01-18 |
| ES404185A1 (es) | 1975-06-01 |
| FR2144904A1 (enrdf_load_stackoverflow) | 1973-02-16 |
| IT956844B (it) | 1973-10-10 |
| DE2232756C2 (de) | 1984-02-23 |
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