JPS5143944B2 - - Google Patents
Info
- Publication number
- JPS5143944B2 JPS5143944B2 JP2568572A JP2568572A JPS5143944B2 JP S5143944 B2 JPS5143944 B2 JP S5143944B2 JP 2568572 A JP2568572 A JP 2568572A JP 2568572 A JP2568572 A JP 2568572A JP S5143944 B2 JPS5143944 B2 JP S5143944B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Dicing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2568572A JPS5143944B2 (en:Method) | 1972-03-15 | 1972-03-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2568572A JPS5143944B2 (en:Method) | 1972-03-15 | 1972-03-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4895181A JPS4895181A (en:Method) | 1973-12-06 |
| JPS5143944B2 true JPS5143944B2 (en:Method) | 1976-11-25 |
Family
ID=12172630
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2568572A Expired JPS5143944B2 (en:Method) | 1972-03-15 | 1972-03-15 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5143944B2 (en:Method) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3587081B2 (ja) | 1999-05-10 | 2004-11-10 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体発光素子 |
| JP3555500B2 (ja) | 1999-05-21 | 2004-08-18 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体及びその製造方法 |
| US6580098B1 (en) | 1999-07-27 | 2003-06-17 | Toyoda Gosei Co., Ltd. | Method for manufacturing gallium nitride compound semiconductor |
| JP4432180B2 (ja) | 1999-12-24 | 2010-03-17 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体の製造方法、ｉｉｉ族窒化物系化合物半導体素子及びｉｉｉ族窒化物系化合物半導体 |
| JP2001185493A (ja) | 1999-12-24 | 2001-07-06 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体の製造方法及びｉｉｉ族窒化物系化合物半導体素子 |
| JP2001267242A (ja) | 2000-03-14 | 2001-09-28 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体及びその製造方法 |
| US7141444B2 (en) | 2000-03-14 | 2006-11-28 | Toyoda Gosei Co., Ltd. | Production method of III nitride compound semiconductor and III nitride compound semiconductor element |
| TW518767B (en) | 2000-03-31 | 2003-01-21 | Toyoda Gosei Kk | Production method of III nitride compound semiconductor and III nitride compound semiconductor element |
| JP2001313259A (ja) | 2000-04-28 | 2001-11-09 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体基板の製造方法及び半導体素子 |
| JP3864670B2 (ja) * | 2000-05-23 | 2007-01-10 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法 |
| EP1367150B1 (en) | 2001-02-14 | 2009-08-19 | Toyoda Gosei Co., Ltd. | Production method for semiconductor crystal and semiconductor luminous element |
| JP2002280314A (ja) | 2001-03-22 | 2002-09-27 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体の製造方法、及びそれに基づくｉｉｉ族窒化物系化合物半導体素子 |
| JP3690326B2 (ja) | 2001-10-12 | 2005-08-31 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体の製造方法 |
| JP4241764B2 (ja) * | 2006-06-07 | 2009-03-18 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体発光素子 |
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1972
- 1972-03-15 JP JP2568572A patent/JPS5143944B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4895181A (en:Method) | 1973-12-06 |