JPS5140788A - Kodenchioyobi sonoseizohoho - Google Patents

Kodenchioyobi sonoseizohoho

Info

Publication number
JPS5140788A
JPS5140788A JP50093681A JP9368175A JPS5140788A JP S5140788 A JPS5140788 A JP S5140788A JP 50093681 A JP50093681 A JP 50093681A JP 9368175 A JP9368175 A JP 9368175A JP S5140788 A JPS5140788 A JP S5140788A
Authority
JP
Japan
Prior art keywords
kodenchioyobi
sonoseizohoho
kodenchioyobi sonoseizohoho
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50093681A
Other languages
English (en)
Inventor
Fuorura Furanshisu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of JPS5140788A publication Critical patent/JPS5140788A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/025—Deposition multi-step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/12—Photocathodes-Cs coated and solar cell
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/152—Single crystal on amorphous substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/17—Vapor-liquid-solid

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP50093681A 1974-07-31 1975-07-31 Kodenchioyobi sonoseizohoho Pending JPS5140788A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7426521A FR2280427A1 (fr) 1974-07-31 1974-07-31 Procede de fabrication d'un cristal par epitaxie sur un substrat metallique liquide

Publications (1)

Publication Number Publication Date
JPS5140788A true JPS5140788A (en) 1976-04-05

Family

ID=9141912

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50093681A Pending JPS5140788A (en) 1974-07-31 1975-07-31 Kodenchioyobi sonoseizohoho

Country Status (5)

Country Link
US (1) US4053326A (ja)
JP (1) JPS5140788A (ja)
DE (1) DE2533166A1 (ja)
FR (1) FR2280427A1 (ja)
NL (1) NL7508657A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53130973A (en) * 1977-04-21 1978-11-15 Agency Of Ind Science & Technol Manufacture for silicon thin film
JPS53130974A (en) * 1977-04-21 1978-11-15 Agency Of Ind Science & Technol Manufacture for silicon thin film
JPS6076177A (ja) * 1983-10-03 1985-04-30 Matsushita Electric Ind Co Ltd モノリシツク発光ダイオ−ドアレイ
JPS6233439A (ja) * 1985-08-06 1987-02-13 Nec Corp 半導体集積回路
JPH01110776A (ja) * 1987-10-23 1989-04-27 Mitsubishi Electric Corp 半導体多結晶薄膜の製造方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3993533A (en) * 1975-04-09 1976-11-23 Carnegie-Mellon University Method for making semiconductors for solar cells
US4097309A (en) * 1977-01-31 1978-06-27 The Boeing Company Thermally isolated solar cell construction
US4094704A (en) * 1977-05-11 1978-06-13 Milnes Arthur G Dual electrically insulated solar cells
FR2407892A1 (fr) * 1977-11-04 1979-06-01 Rhone Poulenc Ind Procede de fabrication de silicium pour la conversion photovoltaique
US4328390A (en) * 1979-09-17 1982-05-04 The University Of Delaware Thin film photovoltaic cell
US4482780A (en) * 1982-11-30 1984-11-13 The United States Of America As Represented By The United States Department Of Energy Solar cells with low cost substrates and process of making same
JPS613471A (ja) * 1984-06-15 1986-01-09 Kanegafuchi Chem Ind Co Ltd 半導体装置
US4718185A (en) * 1986-11-07 1988-01-12 Solar Signage, Inc. Modular solar generating system
US5460660A (en) * 1993-07-21 1995-10-24 Photon Energy, Inc. Apparatus for encapsulating a photovoltaic module
US7635637B2 (en) * 2005-07-25 2009-12-22 Fairchild Semiconductor Corporation Semiconductor structures formed on substrates and methods of manufacturing the same
SG172326A1 (en) * 2008-12-24 2011-07-28 Mitaka Koki Kk Solar heat exchanger
JP5337612B2 (ja) * 2009-07-27 2013-11-06 三鷹光器株式会社 太陽光線熱変換装置用の熱交換構造

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3095279A (en) * 1960-04-07 1963-06-25 Tung Sol Electric Inc Apparatus for producing pure silicon
US3151378A (en) * 1960-11-01 1964-10-06 Int Rectifier Corp Process for the manufacture of pure tin alloyed contact for diffused silicon devices
FR1442502A (fr) * 1964-05-08 1966-06-17 Int Standard Electric Corp Perfectionnements aux méthodes de formation de couches
US3772768A (en) * 1970-02-13 1973-11-20 Licentia Gmbh Method of producing a solar cell
GB1292534A (en) * 1970-06-04 1972-10-11 Pfizer Method for making a continuous film of pyrolytic graphite having bi-directional reinforcing properties
US3833425A (en) * 1972-02-23 1974-09-03 Us Navy Solar cell array
US3914856A (en) * 1972-06-05 1975-10-28 Fang Pao Hsien Economical solar cell for producing electricity

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53130973A (en) * 1977-04-21 1978-11-15 Agency Of Ind Science & Technol Manufacture for silicon thin film
JPS53130974A (en) * 1977-04-21 1978-11-15 Agency Of Ind Science & Technol Manufacture for silicon thin film
JPS5633853B2 (ja) * 1977-04-21 1981-08-06
JPS5633854B2 (ja) * 1977-04-21 1981-08-06
JPS6076177A (ja) * 1983-10-03 1985-04-30 Matsushita Electric Ind Co Ltd モノリシツク発光ダイオ−ドアレイ
JPS6233439A (ja) * 1985-08-06 1987-02-13 Nec Corp 半導体集積回路
JPH0582743B2 (ja) * 1985-08-06 1993-11-22 Nippon Electric Co
JPH01110776A (ja) * 1987-10-23 1989-04-27 Mitsubishi Electric Corp 半導体多結晶薄膜の製造方法

Also Published As

Publication number Publication date
US4053326A (en) 1977-10-11
DE2533166A1 (de) 1976-02-12
FR2280427A1 (fr) 1976-02-27
NL7508657A (nl) 1976-02-03
FR2280427B1 (ja) 1978-12-29

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