JPS5131153B1 - - Google Patents

Info

Publication number
JPS5131153B1
JPS5131153B1 JP46096017A JP9601771A JPS5131153B1 JP S5131153 B1 JPS5131153 B1 JP S5131153B1 JP 46096017 A JP46096017 A JP 46096017A JP 9601771 A JP9601771 A JP 9601771A JP S5131153 B1 JPS5131153 B1 JP S5131153B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP46096017A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5131153B1 publication Critical patent/JPS5131153B1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02241III-V semiconductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Formation Of Insulating Films (AREA)
  • Electroluminescent Light Sources (AREA)
JP46096017A 1970-11-30 1971-11-30 Pending JPS5131153B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US9354470A 1970-11-30 1970-11-30
US14196471A 1971-05-10 1971-05-10

Publications (1)

Publication Number Publication Date
JPS5131153B1 true JPS5131153B1 (en) 1976-09-04

Family

ID=26787656

Family Applications (1)

Application Number Title Priority Date Filing Date
JP46096017A Pending JPS5131153B1 (en) 1970-11-30 1971-11-30

Country Status (13)

Country Link
JP (1) JPS5131153B1 (en)
BE (1) BE775868A (en)
CA (1) CA920285A (en)
CH (1) CH536035A (en)
DE (1) DE2158681C3 (en)
ES (1) ES397861A1 (en)
FR (1) FR2116159A5 (en)
GB (1) GB1360073A (en)
IE (1) IE35848B1 (en)
IT (1) IT945195B (en)
NL (1) NL155131B (en)
PH (1) PH11254A (en)
SE (1) SE367532B (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3776789A (en) * 1972-05-01 1973-12-04 Ibm METHOD FOR PROTECTING GaAs WAFER SURFACES
FR2287776A1 (en) * 1974-10-09 1976-05-07 Lignes Telegraph Telephon LED array with diffused junctions - formed from semiconductor contg. zinc doped gallium
US4843450A (en) * 1986-06-16 1989-06-27 International Business Machines Corporation Compound semiconductor interface control
US5451548A (en) * 1994-03-23 1995-09-19 At&T Corp. Electron beam deposition of gallium oxide thin films using a single high purity crystal source
US5550089A (en) * 1994-03-23 1996-08-27 Lucent Technologies Inc. Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd3 Ga5 O12 source.
DE19509864C2 (en) * 1995-03-17 2001-10-04 Oce Printing Systems Gmbh Process for aging light-emitting diodes
AU2001283424A1 (en) * 2000-08-17 2002-02-25 Power Signal Technologies, Inc. Glass-to-metal hermetically led array in a sealed solid state light
DE10261675B4 (en) * 2002-12-31 2013-08-14 Osram Opto Semiconductors Gmbh Optoelectronic component with radiation-permeable electrical contact layer
CN111725363A (en) * 2020-05-28 2020-09-29 南京中电熊猫液晶显示科技有限公司 Miniature light-emitting diode backboard and manufacturing method thereof

Also Published As

Publication number Publication date
NL155131B (en) 1977-11-15
FR2116159A5 (en) 1972-07-07
BE775868A (en) 1972-03-16
IT945195B (en) 1973-05-10
ES397861A1 (en) 1975-04-16
NL7116220A (en) 1972-06-01
IE35848B1 (en) 1976-06-09
IE35848L (en) 1972-05-30
CH536035A (en) 1973-04-15
PH11254A (en) 1977-10-28
CA920285A (en) 1973-01-30
DE2158681C3 (en) 1978-12-07
SE367532B (en) 1974-05-27
DE2158681B2 (en) 1975-08-14
GB1360073A (en) 1974-07-17
DE2158681A1 (en) 1972-07-20

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