BE775868A - PROCESS FOR PROCESSING P-N JUNCTION PHOTO-EMITTER DEVICES - Google Patents

PROCESS FOR PROCESSING P-N JUNCTION PHOTO-EMITTER DEVICES

Info

Publication number
BE775868A
BE775868A BE775868A BE775868A BE775868A BE 775868 A BE775868 A BE 775868A BE 775868 A BE775868 A BE 775868A BE 775868 A BE775868 A BE 775868A BE 775868 A BE775868 A BE 775868A
Authority
BE
Belgium
Prior art keywords
processing
emitter devices
junction photo
photo
junction
Prior art date
Application number
BE775868A
Other languages
French (fr)
Inventor
R L Hartman
M Kuhn
B Schwartz
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of BE775868A publication Critical patent/BE775868A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02241—III-V semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Formation Of Insulating Films (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
BE775868A 1970-11-30 1971-11-26 PROCESS FOR PROCESSING P-N JUNCTION PHOTO-EMITTER DEVICES BE775868A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US9354470A 1970-11-30 1970-11-30
US14196471A 1971-05-10 1971-05-10

Publications (1)

Publication Number Publication Date
BE775868A true BE775868A (en) 1972-03-16

Family

ID=26787656

Family Applications (1)

Application Number Title Priority Date Filing Date
BE775868A BE775868A (en) 1970-11-30 1971-11-26 PROCESS FOR PROCESSING P-N JUNCTION PHOTO-EMITTER DEVICES

Country Status (13)

Country Link
JP (1) JPS5131153B1 (en)
BE (1) BE775868A (en)
CA (1) CA920285A (en)
CH (1) CH536035A (en)
DE (1) DE2158681C3 (en)
ES (1) ES397861A1 (en)
FR (1) FR2116159A5 (en)
GB (1) GB1360073A (en)
IE (1) IE35848B1 (en)
IT (1) IT945195B (en)
NL (1) NL155131B (en)
PH (1) PH11254A (en)
SE (1) SE367532B (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3776789A (en) * 1972-05-01 1973-12-04 Ibm METHOD FOR PROTECTING GaAs WAFER SURFACES
FR2287776A1 (en) * 1974-10-09 1976-05-07 Lignes Telegraph Telephon LED array with diffused junctions - formed from semiconductor contg. zinc doped gallium
US4843450A (en) * 1986-06-16 1989-06-27 International Business Machines Corporation Compound semiconductor interface control
US5451548A (en) * 1994-03-23 1995-09-19 At&T Corp. Electron beam deposition of gallium oxide thin films using a single high purity crystal source
US5550089A (en) * 1994-03-23 1996-08-27 Lucent Technologies Inc. Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd3 Ga5 O12 source.
DE19509864C2 (en) * 1995-03-17 2001-10-04 Oce Printing Systems Gmbh Process for aging light-emitting diodes
WO2002015281A2 (en) * 2000-08-17 2002-02-21 Power Signal Technologies, Inc. Glass-to-metal hermetically sealed led array
DE10261675B4 (en) * 2002-12-31 2013-08-14 Osram Opto Semiconductors Gmbh Optoelectronic component with radiation-permeable electrical contact layer
CN111725363A (en) * 2020-05-28 2020-09-29 南京中电熊猫液晶显示科技有限公司 Miniature light-emitting diode backboard and manufacturing method thereof

Also Published As

Publication number Publication date
NL7116220A (en) 1972-06-01
IT945195B (en) 1973-05-10
IE35848B1 (en) 1976-06-09
NL155131B (en) 1977-11-15
IE35848L (en) 1972-05-30
ES397861A1 (en) 1975-04-16
DE2158681A1 (en) 1972-07-20
DE2158681B2 (en) 1975-08-14
GB1360073A (en) 1974-07-17
FR2116159A5 (en) 1972-07-07
PH11254A (en) 1977-10-28
JPS5131153B1 (en) 1976-09-04
CA920285A (en) 1973-01-30
SE367532B (en) 1974-05-27
DE2158681C3 (en) 1978-12-07
CH536035A (en) 1973-04-15

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