JPS5130568B1 - - Google Patents

Info

Publication number
JPS5130568B1
JPS5130568B1 JP47052912A JP5291272A JPS5130568B1 JP S5130568 B1 JPS5130568 B1 JP S5130568B1 JP 47052912 A JP47052912 A JP 47052912A JP 5291272 A JP5291272 A JP 5291272A JP S5130568 B1 JPS5130568 B1 JP S5130568B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP47052912A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5130568B1 publication Critical patent/JPS5130568B1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69Inorganic materials
    • H10P14/692Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6923Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C1/00Ingredients generally applicable to manufacture of glasses, glazes, or vitreous enamels
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/02Surface treatment of glass, not in the form of fibres or filaments, by coating with glass
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00Glass compositions
    • C03C3/04Glass compositions containing silica
    • C03C3/076Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326Deposition processes
    • H10P14/6328Deposition from the gas or vapour phase
    • H10P14/6334Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Vapour Deposition (AREA)
  • Surface Treatment Of Glass (AREA)
JP47052912A 1971-05-26 1972-05-26 Pending JPS5130568B1 (enFirst)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00146866A US3850687A (en) 1971-05-26 1971-05-26 Method of densifying silicate glasses

Publications (1)

Publication Number Publication Date
JPS5130568B1 true JPS5130568B1 (enFirst) 1976-09-01

Family

ID=22519317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47052912A Pending JPS5130568B1 (enFirst) 1971-05-26 1972-05-26

Country Status (6)

Country Link
US (1) US3850687A (enFirst)
JP (1) JPS5130568B1 (enFirst)
CA (1) CA956852A (enFirst)
DE (1) DE2224515B2 (enFirst)
FR (1) FR2139187B1 (enFirst)
GB (1) GB1369561A (enFirst)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013538443A (ja) * 2010-07-08 2013-10-10 モレキュラー・インプリンツ・インコーポレーテッド 酸化ケイ素層の強化された高密度化方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3917882A (en) * 1974-06-24 1975-11-04 Ibm Method for applying a dielectric glass to a glass substrate
JPS51144183A (en) * 1975-06-06 1976-12-10 Hitachi Ltd Semiconductor element containing surface protection film
US4198444A (en) * 1975-08-04 1980-04-15 General Electric Company Method for providing substantially hermetic sealing means for electronic components
US4196232A (en) * 1975-12-18 1980-04-01 Rca Corporation Method of chemically vapor-depositing a low-stress glass layer
US4168960A (en) * 1978-04-18 1979-09-25 Westinghouse Electric Corp. Method of making a glass encapsulated diode
US4425146A (en) * 1979-12-17 1984-01-10 Nippon Telegraph & Telephone Public Corporation Method of making glass waveguide for optical circuit
US4686112A (en) * 1983-01-13 1987-08-11 Rca Corporation Deposition of silicon dioxide
JP3122125B2 (ja) * 1989-05-07 2001-01-09 忠弘 大見 酸化膜の形成方法
EP0572704B1 (en) * 1992-06-05 2000-04-19 Semiconductor Process Laboratory Co., Ltd. Method for manufacturing a semiconductor device including method of reforming an insulating film formed by low temperature CVD
CN101337830B (zh) * 2008-08-28 2011-07-27 电子科技大学 薄膜电路产品基片处理方法
US20110127584A1 (en) * 2008-07-25 2011-06-02 Naoki Ushiyama Method for manufacturing infrared image sensor and infrared image sensor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3440496A (en) * 1965-07-20 1969-04-22 Hughes Aircraft Co Surface-protected semiconductor devices and methods of manufacturing
US3481781A (en) * 1967-03-17 1969-12-02 Rca Corp Silicate glass coating of semiconductor devices
DE1614691B2 (de) * 1967-12-21 1975-12-04 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von Halbleiterbauelementen
US3620837A (en) * 1968-09-16 1971-11-16 Ibm Reliability of aluminum and aluminum alloy lands

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013538443A (ja) * 2010-07-08 2013-10-10 モレキュラー・インプリンツ・インコーポレーテッド 酸化ケイ素層の強化された高密度化方法

Also Published As

Publication number Publication date
DE2224515A1 (de) 1972-12-07
CA956852A (en) 1974-10-29
US3850687A (en) 1974-11-26
FR2139187A1 (enFirst) 1973-01-05
DE2224515B2 (de) 1976-11-25
GB1369561A (en) 1974-10-09
FR2139187B1 (enFirst) 1973-07-13

Similar Documents

Publication Publication Date Title
FR2132463A1 (enFirst)
FR2139187B1 (enFirst)
DE2219794B2 (enFirst)
DE2203415C3 (enFirst)
FR2089832A7 (enFirst)
FR2121243A5 (enFirst)
DE2234007C3 (enFirst)
DE2125158A1 (enFirst)
FR2121396A1 (enFirst)
FR2120535A5 (enFirst)
FR2120487A5 (enFirst)
FR2121390A3 (enFirst)
AU2941471A (enFirst)
FR2125625A1 (enFirst)
FR2083238A5 (enFirst)
DK141609C (enFirst)
CS167521B1 (enFirst)
AR199640Q (enFirst)
CS160553B1 (enFirst)
CS159386B1 (enFirst)
CH567975A5 (enFirst)
DD99096A1 (enFirst)
AU479958A (enFirst)
BE781798A (enFirst)
BG16897A1 (enFirst)