JPS5129879A - - Google Patents
Info
- Publication number
- JPS5129879A JPS5129879A JP49102105A JP10210574A JPS5129879A JP S5129879 A JPS5129879 A JP S5129879A JP 49102105 A JP49102105 A JP 49102105A JP 10210574 A JP10210574 A JP 10210574A JP S5129879 A JPS5129879 A JP S5129879A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10210574A JPS5318382B2 (enrdf_load_stackoverflow) | 1974-09-06 | 1974-09-06 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10210574A JPS5318382B2 (enrdf_load_stackoverflow) | 1974-09-06 | 1974-09-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5129879A true JPS5129879A (enrdf_load_stackoverflow) | 1976-03-13 |
JPS5318382B2 JPS5318382B2 (enrdf_load_stackoverflow) | 1978-06-14 |
Family
ID=14318506
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10210574A Expired JPS5318382B2 (enrdf_load_stackoverflow) | 1974-09-06 | 1974-09-06 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5318382B2 (enrdf_load_stackoverflow) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS572567A (en) * | 1980-06-06 | 1982-01-07 | Nec Corp | Semiconductor device |
JPS57160159A (en) * | 1981-03-28 | 1982-10-02 | Toshiba Corp | High breakdown voltage planar type semiconductor device |
JPS5817676A (ja) * | 1981-07-24 | 1983-02-01 | Toshiba Corp | 高耐圧プレ−ナ型半導体装置 |
JPS5858360U (ja) * | 1981-10-14 | 1983-04-20 | 富士電機株式会社 | プレ−ナ型半導体素子 |
JPS592368A (ja) * | 1982-05-28 | 1984-01-07 | シ−メンス・アクチエンゲゼルシヤフト | プレ−ナ形半導体素子 |
JPS5965475A (ja) * | 1982-10-06 | 1984-04-13 | Semiconductor Res Found | 半導体デバイス |
JP2003086815A (ja) * | 2001-09-12 | 2003-03-20 | Fuji Electric Co Ltd | 半導体装置 |
-
1974
- 1974-09-06 JP JP10210574A patent/JPS5318382B2/ja not_active Expired
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS572567A (en) * | 1980-06-06 | 1982-01-07 | Nec Corp | Semiconductor device |
JPS57160159A (en) * | 1981-03-28 | 1982-10-02 | Toshiba Corp | High breakdown voltage planar type semiconductor device |
JPS5817676A (ja) * | 1981-07-24 | 1983-02-01 | Toshiba Corp | 高耐圧プレ−ナ型半導体装置 |
JPS5858360U (ja) * | 1981-10-14 | 1983-04-20 | 富士電機株式会社 | プレ−ナ型半導体素子 |
JPS592368A (ja) * | 1982-05-28 | 1984-01-07 | シ−メンス・アクチエンゲゼルシヤフト | プレ−ナ形半導体素子 |
JPS5965475A (ja) * | 1982-10-06 | 1984-04-13 | Semiconductor Res Found | 半導体デバイス |
JP2003086815A (ja) * | 2001-09-12 | 2003-03-20 | Fuji Electric Co Ltd | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS5318382B2 (enrdf_load_stackoverflow) | 1978-06-14 |