JPS5122356B2 - - Google Patents

Info

Publication number
JPS5122356B2
JPS5122356B2 JP48102578A JP10257873A JPS5122356B2 JP S5122356 B2 JPS5122356 B2 JP S5122356B2 JP 48102578 A JP48102578 A JP 48102578A JP 10257873 A JP10257873 A JP 10257873A JP S5122356 B2 JPS5122356 B2 JP S5122356B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP48102578A
Other languages
Japanese (ja)
Other versions
JPS4966082A (cs
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4966082A publication Critical patent/JPS4966082A/ja
Publication of JPS5122356B2 publication Critical patent/JPS5122356B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP48102578A 1972-09-11 1973-09-11 Expired JPS5122356B2 (cs)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US28786072A 1972-09-11 1972-09-11

Publications (2)

Publication Number Publication Date
JPS4966082A JPS4966082A (cs) 1974-06-26
JPS5122356B2 true JPS5122356B2 (cs) 1976-07-09

Family

ID=23104672

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48102578A Expired JPS5122356B2 (cs) 1972-09-11 1973-09-11

Country Status (5)

Country Link
JP (1) JPS5122356B2 (cs)
DE (1) DE2345784C3 (cs)
FR (1) FR2199200B1 (cs)
GB (1) GB1443718A (cs)
NL (1) NL7312152A (cs)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1522487A (en) * 1974-08-29 1978-08-23 Sony Corp Solid state colour television cameras
JPS51131279A (en) * 1975-05-08 1976-11-15 Matsushita Electric Ind Co Ltd Electric charge combination element
JPS51138175A (en) * 1975-05-26 1976-11-29 Fujitsu Ltd Method of manufacturing charge coupled device
JPS5915498B2 (ja) * 1975-08-09 1984-04-10 松下電器産業株式会社 半導体装置の製造方法
JPS5412582A (en) * 1977-06-29 1979-01-30 Hitachi Ltd Semiconductor device
JPS5429519A (en) * 1977-08-09 1979-03-05 Fujitsu Ltd Semiconductor pick up device
US4173064A (en) * 1977-08-22 1979-11-06 Texas Instruments Incorporated Split gate electrode, self-aligned antiblooming structure and method of making same
US4251571A (en) * 1978-05-02 1981-02-17 International Business Machines Corporation Method for forming semiconductor structure with improved isolation between two layers of polycrystalline silicon
JPS559532U (cs) * 1978-06-30 1980-01-22
FR2462828B1 (fr) * 1979-07-25 1985-09-27 Rca Corp Procede de fabrication de dispositifs de formation d'image a substrat aminci pour tube analyseur de television par exemple
JPS5632776A (en) * 1979-08-23 1981-04-02 Sanyo Electric Co Ltd Ccd image sensor
US4577115A (en) * 1982-11-08 1986-03-18 Rca Corporation Apparatus for sensing transient phenomena in radiant energy images
JPS60246673A (ja) * 1984-05-22 1985-12-06 Nec Corp 固体撮像素子
JPS60163876U (ja) * 1985-03-06 1985-10-31 富士通株式会社 半導体撮像装置
FR2578683B1 (fr) * 1985-03-08 1987-08-28 Thomson Csf Procede de fabrication d'une diode anti-eblouissement associee a un canal en surface, et systeme anti-eblouissement obtenu par ce procede
GB2413007A (en) * 2004-04-07 2005-10-12 E2V Tech Uk Ltd Multiplication register for amplifying signal charge

Also Published As

Publication number Publication date
FR2199200A1 (cs) 1974-04-05
DE2345784C3 (de) 1979-05-23
DE2345784B2 (de) 1976-12-16
DE2345784A1 (de) 1974-03-21
NL7312152A (cs) 1974-03-13
FR2199200B1 (cs) 1977-09-23
GB1443718A (en) 1976-07-21
JPS4966082A (cs) 1974-06-26

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