JPS5120277B2 - - Google Patents

Info

Publication number
JPS5120277B2
JPS5120277B2 JP47082376A JP8237672A JPS5120277B2 JP S5120277 B2 JPS5120277 B2 JP S5120277B2 JP 47082376 A JP47082376 A JP 47082376A JP 8237672 A JP8237672 A JP 8237672A JP S5120277 B2 JPS5120277 B2 JP S5120277B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP47082376A
Other languages
Japanese (ja)
Other versions
JPS4940085A (en, 2012
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP47082376A priority Critical patent/JPS5120277B2/ja
Priority to US05/388,148 priority patent/US3952323A/en
Publication of JPS4940085A publication Critical patent/JPS4940085A/ja
Publication of JPS5120277B2 publication Critical patent/JPS5120277B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Light Receiving Elements (AREA)
JP47082376A 1972-08-17 1972-08-17 Expired JPS5120277B2 (en, 2012)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP47082376A JPS5120277B2 (en, 2012) 1972-08-17 1972-08-17
US05/388,148 US3952323A (en) 1972-08-17 1973-08-14 Semiconductor photoelectric device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47082376A JPS5120277B2 (en, 2012) 1972-08-17 1972-08-17

Publications (2)

Publication Number Publication Date
JPS4940085A JPS4940085A (en, 2012) 1974-04-15
JPS5120277B2 true JPS5120277B2 (en, 2012) 1976-06-23

Family

ID=13772850

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47082376A Expired JPS5120277B2 (en, 2012) 1972-08-17 1972-08-17

Country Status (2)

Country Link
US (1) US3952323A (en, 2012)
JP (1) JPS5120277B2 (en, 2012)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4278830A (en) * 1977-09-29 1981-07-14 Nasa Schottky barrier solar cell
JPS5472911A (en) * 1977-11-22 1979-06-11 Fujitsu Ltd Connection system between test equipment for subscribersigma line and trunk
US4193821A (en) * 1978-08-14 1980-03-18 Exxon Research & Engineering Co. Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer
JPS55124276A (en) * 1979-03-20 1980-09-25 Agency Of Ind Science & Technol Photoelectric transducer
US4320248A (en) * 1979-08-13 1982-03-16 Shunpei Yamazaki Semiconductor photoelectric conversion device
US4321099A (en) * 1979-11-13 1982-03-23 Nasa Method of fabricating Schottky barrier solar cell
CA1164734A (en) * 1980-07-11 1984-04-03 Michael Schneider Method for applying an anti-reflection coating to a solar cell
US4338482A (en) * 1981-02-17 1982-07-06 Roy G. Gordon Photovoltaic cell
JPH01280368A (ja) * 1988-05-06 1989-11-10 Sharp Corp 化合物半導体発光素子
US5047645A (en) * 1989-07-07 1991-09-10 The Royal Institution For The Advancement Of Learning Thin film infrared laser detector and monitor
US20010048140A1 (en) * 1997-04-10 2001-12-06 Inao Toyoda Photo sensing integrated circuit device and related circuit adjustment

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL128768C (en, 2012) * 1960-12-09
US3391282A (en) * 1965-02-19 1968-07-02 Fairchild Camera Instr Co Variable length photodiode using an inversion plate
US3457473A (en) * 1965-11-10 1969-07-22 Nippon Electric Co Semiconductor device with schottky barrier formed on (100) plane of gaas
US3596151A (en) * 1966-06-10 1971-07-27 Electro Tec Corp Constant sensitivity photoconductor detector with a tin oxide-semiconductor rectifying junction
CA918297A (en) * 1969-09-24 1973-01-02 Tanimura Shigeru Semiconductor device and method of making
US3742317A (en) * 1970-09-02 1973-06-26 Instr Inc Schottky barrier diode
DE2049507C3 (de) * 1970-10-08 1979-11-08 Siemens Ag, 1000 Berlin Und 8000 Muenchen Lichtempfindliche Halbleiteranordnung

Also Published As

Publication number Publication date
US3952323A (en) 1976-04-20
JPS4940085A (en, 2012) 1974-04-15

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