JPS5120277B2 - - Google Patents

Info

Publication number
JPS5120277B2
JPS5120277B2 JP47082376A JP8237672A JPS5120277B2 JP S5120277 B2 JPS5120277 B2 JP S5120277B2 JP 47082376 A JP47082376 A JP 47082376A JP 8237672 A JP8237672 A JP 8237672A JP S5120277 B2 JPS5120277 B2 JP S5120277B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP47082376A
Other versions
JPS4940085A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP47082376A priority Critical patent/JPS5120277B2/ja
Priority to US05/388,148 priority patent/US3952323A/en
Publication of JPS4940085A publication Critical patent/JPS4940085A/ja
Publication of JPS5120277B2 publication Critical patent/JPS5120277B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1133—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a conductor-insulator-semiconductor diode or a CCD device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
JP47082376A 1972-08-17 1972-08-17 Expired JPS5120277B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP47082376A JPS5120277B2 (ja) 1972-08-17 1972-08-17
US05/388,148 US3952323A (en) 1972-08-17 1973-08-14 Semiconductor photoelectric device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47082376A JPS5120277B2 (ja) 1972-08-17 1972-08-17

Publications (2)

Publication Number Publication Date
JPS4940085A JPS4940085A (ja) 1974-04-15
JPS5120277B2 true JPS5120277B2 (ja) 1976-06-23

Family

ID=13772850

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47082376A Expired JPS5120277B2 (ja) 1972-08-17 1972-08-17

Country Status (2)

Country Link
US (1) US3952323A (ja)
JP (1) JPS5120277B2 (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4278830A (en) * 1977-09-29 1981-07-14 Nasa Schottky barrier solar cell
JPS5472911A (en) * 1977-11-22 1979-06-11 Fujitsu Ltd Connection system between test equipment for subscribersigma line and trunk
US4193821A (en) * 1978-08-14 1980-03-18 Exxon Research & Engineering Co. Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer
JPS55124276A (en) * 1979-03-20 1980-09-25 Agency Of Ind Science & Technol Photoelectric transducer
US4320249A (en) * 1979-08-13 1982-03-16 Shunpei Yamazaki Heterojunction type semiconductor photoelectric conversion device
US4321099A (en) * 1979-11-13 1982-03-23 Nasa Method of fabricating Schottky barrier solar cell
CA1164734A (en) * 1980-07-11 1984-04-03 Michael Schneider Method for applying an anti-reflection coating to a solar cell
US4338482A (en) * 1981-02-17 1982-07-06 Roy G. Gordon Photovoltaic cell
JPH01280368A (ja) * 1988-05-06 1989-11-10 Sharp Corp 化合物半導体発光素子
US5047645A (en) * 1989-07-07 1991-09-10 The Royal Institution For The Advancement Of Learning Thin film infrared laser detector and monitor
US20010048140A1 (en) * 1997-04-10 2001-12-06 Inao Toyoda Photo sensing integrated circuit device and related circuit adjustment

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL268503A (ja) * 1960-12-09
US3391282A (en) * 1965-02-19 1968-07-02 Fairchild Camera Instr Co Variable length photodiode using an inversion plate
US3457473A (en) * 1965-11-10 1969-07-22 Nippon Electric Co Semiconductor device with schottky barrier formed on (100) plane of gaas
US3596151A (en) * 1966-06-10 1971-07-27 Electro Tec Corp Constant sensitivity photoconductor detector with a tin oxide-semiconductor rectifying junction
CA918297A (en) * 1969-09-24 1973-01-02 Tanimura Shigeru Semiconductor device and method of making
US3742317A (en) * 1970-09-02 1973-06-26 Instr Inc Schottky barrier diode
DE2049507C3 (de) * 1970-10-08 1979-11-08 Siemens Ag, 1000 Berlin Und 8000 Muenchen Lichtempfindliche Halbleiteranordnung

Also Published As

Publication number Publication date
US3952323A (en) 1976-04-20
JPS4940085A (ja) 1974-04-15

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