JPS51150979A - Monolithic darlington transistor - Google Patents

Monolithic darlington transistor

Info

Publication number
JPS51150979A
JPS51150979A JP50074900A JP7490075A JPS51150979A JP S51150979 A JPS51150979 A JP S51150979A JP 50074900 A JP50074900 A JP 50074900A JP 7490075 A JP7490075 A JP 7490075A JP S51150979 A JPS51150979 A JP S51150979A
Authority
JP
Japan
Prior art keywords
darlington transistor
monolithic darlington
monolithic
transistor
leyer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50074900A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5753989B2 (enExample
Inventor
Yasuo Kamiya
Masayuki Tabuchi
Tadao Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP50074900A priority Critical patent/JPS51150979A/ja
Publication of JPS51150979A publication Critical patent/JPS51150979A/ja
Publication of JPS5753989B2 publication Critical patent/JPS5753989B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP50074900A 1975-06-19 1975-06-19 Monolithic darlington transistor Granted JPS51150979A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50074900A JPS51150979A (en) 1975-06-19 1975-06-19 Monolithic darlington transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50074900A JPS51150979A (en) 1975-06-19 1975-06-19 Monolithic darlington transistor

Publications (2)

Publication Number Publication Date
JPS51150979A true JPS51150979A (en) 1976-12-24
JPS5753989B2 JPS5753989B2 (enExample) 1982-11-16

Family

ID=13560711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50074900A Granted JPS51150979A (en) 1975-06-19 1975-06-19 Monolithic darlington transistor

Country Status (1)

Country Link
JP (1) JPS51150979A (enExample)

Also Published As

Publication number Publication date
JPS5753989B2 (enExample) 1982-11-16

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