JPS51133186A - A high purity gas system of liquid phase crystal growth apparatus - Google Patents

A high purity gas system of liquid phase crystal growth apparatus

Info

Publication number
JPS51133186A
JPS51133186A JP5746175A JP5746175A JPS51133186A JP S51133186 A JPS51133186 A JP S51133186A JP 5746175 A JP5746175 A JP 5746175A JP 5746175 A JP5746175 A JP 5746175A JP S51133186 A JPS51133186 A JP S51133186A
Authority
JP
Japan
Prior art keywords
gas system
liquid phase
high purity
crystal growth
growth apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5746175A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5318466B2 (Direct
Inventor
Takeshi Kobayashi
Yoshitaka Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP5746175A priority Critical patent/JPS51133186A/ja
Publication of JPS51133186A publication Critical patent/JPS51133186A/ja
Publication of JPS5318466B2 publication Critical patent/JPS5318466B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP5746175A 1975-05-16 1975-05-16 A high purity gas system of liquid phase crystal growth apparatus Granted JPS51133186A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5746175A JPS51133186A (en) 1975-05-16 1975-05-16 A high purity gas system of liquid phase crystal growth apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5746175A JPS51133186A (en) 1975-05-16 1975-05-16 A high purity gas system of liquid phase crystal growth apparatus

Publications (2)

Publication Number Publication Date
JPS51133186A true JPS51133186A (en) 1976-11-18
JPS5318466B2 JPS5318466B2 (Direct) 1978-06-15

Family

ID=13056304

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5746175A Granted JPS51133186A (en) 1975-05-16 1975-05-16 A high purity gas system of liquid phase crystal growth apparatus

Country Status (1)

Country Link
JP (1) JPS51133186A (Direct)

Also Published As

Publication number Publication date
JPS5318466B2 (Direct) 1978-06-15

Similar Documents

Publication Publication Date Title
JPS52140267A (en) Vapor epitaxial crystal growing device
JPS5272399A (en) Method and apparatus for growth of single crystals of al2o3 from gas p hase
JPS51111476A (en) Method of liquid phase epitaxial crystal growth
JPS51133186A (en) A high purity gas system of liquid phase crystal growth apparatus
JPS542300A (en) Methdo and apparatus for vapor phase growth of magnespinel
JPS5245585A (en) Method of stabilizing properties of crystal in flue gas desulfurizatio n process
JPS51128833A (en) Aeration method
JPS5331593A (en) Purifying method for chlorine gas
JPS5227741A (en) Method of preparing schiff-base liquid crystals of high purity and app aratus for the same
JPS5234668A (en) Gaseous phase growing process of semiconductor
JPS51119398A (en) A method for purifying and concentrating caustic soda and hydrochloric acid using a liquid phase thermosyphon process
JPS53130054A (en) Orientation treatment method of liquid crystal cells
JPS5228258A (en) Method for growth of crystals from liquid phase
JPS5219347A (en) Method to cool down transport pipe line of low temperature liquefied g as
JPS53108766A (en) Vapor phase growth method of sos film
JPS51124941A (en) A device for displaying by liquid crystal
JPS53147684A (en) Method of and apparatus for liquid phase epitaxial growth
JPS5267571A (en) Crystallization method for semiconductor
JPS52120682A (en) Gas phase growth method
JPS51114315A (en) A method of activating a material for storing hydrogen gas
JPS5271388A (en) Liquid phase epitaxial gorwth method
JPS5228863A (en) Process for growing in liquid phase
JPS52116071A (en) Process for liquid phase epitaxial growth
JPS51114383A (en) Liquid phase epitaxial crystal growth
JPS51139569A (en) A process for purification of polluting substances