JPS51132730A - Memory circuit - Google Patents

Memory circuit

Info

Publication number
JPS51132730A
JPS51132730A JP50056072A JP5607275A JPS51132730A JP S51132730 A JPS51132730 A JP S51132730A JP 50056072 A JP50056072 A JP 50056072A JP 5607275 A JP5607275 A JP 5607275A JP S51132730 A JPS51132730 A JP S51132730A
Authority
JP
Japan
Prior art keywords
memory circuit
virtually
consumption
state
order
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50056072A
Other languages
Japanese (ja)
Other versions
JPS5751190B2 (en
Inventor
Ichiro Ohigata
Shinji Okuhara
Tetsuo Takeshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50056072A priority Critical patent/JPS51132730A/en
Priority to US05/646,045 priority patent/US4031413A/en
Priority to DE2600389A priority patent/DE2600389C3/en
Priority to CA243,263A priority patent/CA1073109A/en
Publication of JPS51132730A publication Critical patent/JPS51132730A/en
Publication of JPS5751190B2 publication Critical patent/JPS5751190B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/288—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H03K3/352—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region the devices being thyristors

Abstract

PURPOSE:In order to obtain a memory circuit whose power-consumption is virtually 0, in the state of OFF.
JP50056072A 1975-01-10 1975-05-14 Memory circuit Granted JPS51132730A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP50056072A JPS51132730A (en) 1975-05-14 1975-05-14 Memory circuit
US05/646,045 US4031413A (en) 1975-01-10 1976-01-02 Memory circuit
DE2600389A DE2600389C3 (en) 1975-01-10 1976-01-07 Memory circuit with logic control
CA243,263A CA1073109A (en) 1975-05-14 1976-01-09 Memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50056072A JPS51132730A (en) 1975-05-14 1975-05-14 Memory circuit

Publications (2)

Publication Number Publication Date
JPS51132730A true JPS51132730A (en) 1976-11-18
JPS5751190B2 JPS5751190B2 (en) 1982-10-30

Family

ID=13016866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50056072A Granted JPS51132730A (en) 1975-01-10 1975-05-14 Memory circuit

Country Status (2)

Country Link
JP (1) JPS51132730A (en)
CA (1) CA1073109A (en)

Also Published As

Publication number Publication date
JPS5751190B2 (en) 1982-10-30
CA1073109A (en) 1980-03-04

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