JPS5112989B2 - - Google Patents

Info

Publication number
JPS5112989B2
JPS5112989B2 JP8241572A JP8241572A JPS5112989B2 JP S5112989 B2 JPS5112989 B2 JP S5112989B2 JP 8241572 A JP8241572 A JP 8241572A JP 8241572 A JP8241572 A JP 8241572A JP S5112989 B2 JPS5112989 B2 JP S5112989B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8241572A
Other versions
JPS4830370A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4830370A publication Critical patent/JPS4830370A/ja
Publication of JPS5112989B2 publication Critical patent/JPS5112989B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP8241572A 1971-08-18 1972-08-17 Expired JPS5112989B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7130095A FR2149293B1 (ja) 1971-08-18 1971-08-18

Publications (2)

Publication Number Publication Date
JPS4830370A JPS4830370A (ja) 1973-04-21
JPS5112989B2 true JPS5112989B2 (ja) 1976-04-23

Family

ID=9081975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8241572A Expired JPS5112989B2 (ja) 1971-08-18 1972-08-17

Country Status (7)

Country Link
US (1) US3846169A (ja)
JP (1) JPS5112989B2 (ja)
AU (1) AU4557072A (ja)
CA (1) CA970479A (ja)
DE (1) DE2239145C3 (ja)
FR (1) FR2149293B1 (ja)
GB (1) GB1404339A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5812388Y2 (ja) * 1975-04-12 1983-03-09 ユウゲンガイシヤ モジセイサクシヨ ジヤクデンキキノ セツゾクキグ ニオケル コ−ドノ ヌケドメ ソウチ

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2325196C2 (de) * 1973-05-18 1982-09-23 Böttger GmbH Pharmazeutische und Kosmetische Präparate, 1000 Berlin Verfahren zur Herstellung eines eiweißfreien Extraktes aus hämolysiertem Blut
US4188710A (en) * 1978-08-11 1980-02-19 The United States Of America As Represented By The Secretary Of The Navy Ohmic contacts for group III-V n-type semiconductors using epitaxial germanium films
JPS5839374B2 (ja) * 1978-12-26 1983-08-30 松下電器産業株式会社 半導体基板の処理方法
JPS5965017A (ja) * 1982-10-06 1984-04-13 Kiichiro Ozaki 関節拘縮、強直治療剤
JPS60255730A (ja) * 1984-05-30 1985-12-17 Sansho Seiyaku Kk メラニン生成抑制物質
CH684741A5 (de) * 1992-06-11 1994-12-15 Lucchini Lab Sa Verfahren zur Herstellung eines Extraktes.
FR2721033B1 (fr) * 1994-06-13 1996-08-30 Roussy Inst Gustave Nouvelle protéine dénommée placentine, procédé de préparation de cette protéine et composition pharmaceutique la contenant, ADN codant pour ladite protéine.

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1082358A (en) * 1965-05-20 1967-09-06 Standard Telephones Cables Ltd Double injecting semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5812388Y2 (ja) * 1975-04-12 1983-03-09 ユウゲンガイシヤ モジセイサクシヨ ジヤクデンキキノ セツゾクキグ ニオケル コ−ドノ ヌケドメ ソウチ

Also Published As

Publication number Publication date
DE2239145C3 (de) 1981-09-10
DE2239145B2 (de) 1981-01-15
AU4557072A (en) 1974-02-21
DE2239145A1 (de) 1973-03-01
JPS4830370A (ja) 1973-04-21
FR2149293A1 (ja) 1973-03-30
US3846169A (en) 1974-11-05
FR2149293B1 (ja) 1974-09-27
GB1404339A (en) 1975-08-28
CA970479A (en) 1975-07-01

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