JPS51122388A - Method of generating pure mode coherent light modulated by high bit transmission velocity - Google Patents

Method of generating pure mode coherent light modulated by high bit transmission velocity

Info

Publication number
JPS51122388A
JPS51122388A JP51035087A JP3508776A JPS51122388A JP S51122388 A JPS51122388 A JP S51122388A JP 51035087 A JP51035087 A JP 51035087A JP 3508776 A JP3508776 A JP 3508776A JP S51122388 A JPS51122388 A JP S51122388A
Authority
JP
Japan
Prior art keywords
coherent light
high bit
light modulated
bit transmission
transmission velocity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP51035087A
Other languages
English (en)
Japanese (ja)
Inventor
Rutsuseru Peeteru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2514140A external-priority patent/DE2514140C3/de
Priority claimed from DE2548796A external-priority patent/DE2548796C2/de
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of JPS51122388A publication Critical patent/JPS51122388A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06213—Amplitude modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1021—Coupled cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4006—Injection locking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)
JP51035087A 1975-03-29 1976-03-29 Method of generating pure mode coherent light modulated by high bit transmission velocity Pending JPS51122388A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2514140A DE2514140C3 (de) 1975-03-29 1975-03-29 Verfahren zur Erzeugung von mit hoher Bitrate modulierter kohärenter, modenreiner Strahlung unter Verwendung zweier optisch gekoppelter, getrennt voneinander ansteuerbarer Injektionslaser und Anordnung zur Durchführung dieses Verfahrens
DE2548796A DE2548796C2 (de) 1975-10-31 1975-10-31 Laseranordnung

Publications (1)

Publication Number Publication Date
JPS51122388A true JPS51122388A (en) 1976-10-26

Family

ID=25768708

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51035087A Pending JPS51122388A (en) 1975-03-29 1976-03-29 Method of generating pure mode coherent light modulated by high bit transmission velocity

Country Status (4)

Country Link
US (1) US4101845A (OSRAM)
JP (1) JPS51122388A (OSRAM)
FR (1) FR2306551A1 (OSRAM)
GB (1) GB1543405A (OSRAM)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5717190A (en) * 1980-07-04 1982-01-28 Nippon Telegr & Teleph Corp <Ntt> Transmitter for optical communication using semiconductor laser
JPS5882586A (ja) * 1981-11-11 1983-05-18 Nec Corp 波長制御半導体レ−ザ
JPH042192A (ja) * 1989-12-26 1992-01-07 American Teleph & Telegr Co <Att> 周波数変調用ハイブリッドレーザ装置

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4297651A (en) * 1979-08-23 1981-10-27 Northern Telecom Limited Methods for simultaneous suppression of laser pulsations and continuous monitoring of output power
US4347612A (en) * 1980-08-25 1982-08-31 Xerox Corporation Semiconductor injection laser for high speed modulation
EP0060033A1 (en) * 1981-02-16 1982-09-15 British Telecommunications Improvements in or relating to laser light sources
US4485474A (en) * 1981-12-10 1984-11-27 General Dynamics/Electronics Injection laser modulator with external resonator
JPS58180080A (ja) * 1982-04-15 1983-10-21 Mitsubishi Electric Corp 半導体レ−ザ装置
US4503541A (en) * 1982-11-10 1985-03-05 The United States Of America As Represented By The Secretary Of The Navy Controlled-linewidth laser source
US4785454A (en) * 1983-05-13 1988-11-15 American Telephone And Telegraph Company, At&T Bell Laboratories Stabilized cleaved-coupled cavity laser
US4622671A (en) * 1983-02-25 1986-11-11 At&T Bell Laboratories Multicavity optical device
DE3477980D1 (en) * 1983-02-25 1989-06-01 American Telephone & Telegraph Multicavity optical device and applications thereof
US4734380A (en) * 1983-04-08 1988-03-29 American Telephone And Telegraph Company, At&T Bell Laboratories Multicavity optical device held together by metallic film
US4558449A (en) * 1983-07-08 1985-12-10 At&T Bell Laboratories Semiconductor laser with coupled loss modulator for optical telecommunications
US4583226A (en) * 1983-07-28 1986-04-15 At&T Bell Laboratories Coupled cavity injection laser
EP0149042B1 (de) * 1984-01-13 1990-07-04 Siemens Aktiengesellschaft Halbleiter-Diodenlaser
CA1251845A (en) * 1984-08-06 1989-03-28 Ian D. Henning Optical amplification
JPH0632332B2 (ja) * 1984-08-24 1994-04-27 日本電気株式会社 半導体レ−ザ装置
DE3434741A1 (de) * 1984-09-21 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Verkoppelte laserdioden-anordnung
US4736380A (en) * 1986-04-30 1988-04-05 Tektronix, Inc. Laser diode driver
US5070508A (en) * 1986-05-07 1991-12-03 General Electric Company Semiconductor laser with adjustable light beam
EP0283248B1 (en) * 1987-03-17 1993-09-29 Kabushiki Kaisha Toshiba Laser devices
JP2533355B2 (ja) * 1988-03-11 1996-09-11 国際電信電話株式会社 分布帰還形半導体レ―ザ装置およびその電流注入方法
DE3834929A1 (de) * 1988-10-13 1990-04-19 Siemens Ag Wellenleiterreflektor fuer optoelektronische anwendungen und laser
JP2889618B2 (ja) * 1988-12-28 1999-05-10 株式会社リコー アレイ型半導体発光装置
US4903275A (en) * 1989-03-20 1990-02-20 General Electric Company Phase modulation semiconductor laser array
GB8909362D0 (en) * 1989-04-25 1989-06-14 British Telecomm High gain semiconductor laser amplifier package
FR2681191A1 (fr) * 1991-09-06 1993-03-12 France Telecom Composant integre laser-modulateur a super-reseau tres couple.
GB2260872B (en) * 1991-09-20 1995-10-25 Sharp Kk An optical transmission system
JP3526671B2 (ja) * 1995-08-25 2004-05-17 アンリツ株式会社 レーザ光源装置
ATE191998T1 (de) * 1996-05-30 2000-05-15 Deutsche Telekom Ag Generator zur erzeugung eines rauscharmen signals hoher frequenz
US6574260B2 (en) 2001-03-15 2003-06-03 Corning Lasertron Incorporated Electroabsorption modulated laser
DE10245717A1 (de) * 2002-09-25 2004-04-22 Technische Universität Berlin Verfahren und Vorrichtung zum Erzeugen eines optischen Laserpulses
KR100493089B1 (ko) * 2002-12-17 2005-06-02 삼성전자주식회사 집적광학장치
US20140050237A1 (en) * 2012-08-15 2014-02-20 Ranovus Inc. Discretely tunable locally seeded laser device
US9014222B2 (en) 2012-08-15 2015-04-21 Ranovus Inc. Discretely tunable laser device
WO2019099945A1 (en) * 2017-11-16 2019-05-23 Murat Okandan Microsystems and semiconductor hybrid coherent light sources

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3295911A (en) * 1963-03-15 1967-01-03 Bell Telephone Labor Inc Semiconductor light modulators
US3303431A (en) * 1964-02-10 1967-02-07 Ibm Coupled semiconductor injection laser devices
US3434776A (en) * 1965-07-29 1969-03-25 Dow Corp Laser communication system using flexible silicone transmission line
US3517337A (en) * 1967-10-26 1970-06-23 Ibm Modulation of scanning beams in injection lasers
US3477041A (en) * 1968-06-05 1969-11-04 Rca Corp Production of amplitude modulated light by a solid state oscillator
US3815045A (en) * 1972-10-06 1974-06-04 Hitachi Ltd Method of and device for modulating directly a semiconductor laser
US3999146A (en) * 1974-08-23 1976-12-21 Nippon Electric Company, Ltd. Semiconductor laser device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5717190A (en) * 1980-07-04 1982-01-28 Nippon Telegr & Teleph Corp <Ntt> Transmitter for optical communication using semiconductor laser
JPS5882586A (ja) * 1981-11-11 1983-05-18 Nec Corp 波長制御半導体レ−ザ
JPH042192A (ja) * 1989-12-26 1992-01-07 American Teleph & Telegr Co <Att> 周波数変調用ハイブリッドレーザ装置

Also Published As

Publication number Publication date
GB1543405A (en) 1979-04-04
FR2306551A1 (fr) 1976-10-29
FR2306551B3 (OSRAM) 1978-12-22
US4101845A (en) 1978-07-18

Similar Documents

Publication Publication Date Title
JPS51122388A (en) Method of generating pure mode coherent light modulated by high bit transmission velocity
JPS52155907A (en) Method of transmitting bit series
JPS51123093A (en) Laser generator
CA1034035A (en) Method of recovering oil using steam
JPS5282204A (en) Method of producing optically readable information carrier by absorption variation
JPS525400A (en) Modification of fiber by fluorocarbon
AU507778B2 (en) Generating pulsed output representative of roadspeed
SU697050A3 (ru) Способ получени замещенных дифенилсульфидов или их солей
AU1642576A (en) Method of making phosohate salts
JPS5448787A (en) Manufacture of potassium clavulanate
SU626697A3 (ru) Способ получени замещенных 2-арил-2-/трихлорэтил/оксиранов
JPS5273668A (en) Improvement of velocity modulation tube
JPS51133041A (en) Light transmission fiber
JPS51130092A (en) Method of operating cancer by laser
JPS5290659A (en) Method of producing bacon bit
JPS54118792A (en) Method of modulating output of laser
JPS5337445A (en) Method of generating optical character
JPS5263166A (en) Method of producing nonncollapsible slag
SU601287A1 (ru) Способ получени полирибонуклеотидов
SU570189A2 (ru) Формирователь одиночных импульсов
RU567269C (ru) Способ получени фтористого кальци
JPS51124306A (en) Data transmission system
JPS51135671A (en) Light signal modulation system
AU501833B2 (en) Method of producing 5 -fluorouracii derivatives
SU622788A1 (ru) Способ изготовлени легкого заполнител