FR2306551A1 - Procede de generation d'un rayonnement a modes purs, coherent, module avec un debit binaire eleve, au moyen de deux lasers a injection couples optiquement mais pouvant etre commandes separement - Google Patents

Procede de generation d'un rayonnement a modes purs, coherent, module avec un debit binaire eleve, au moyen de deux lasers a injection couples optiquement mais pouvant etre commandes separement

Info

Publication number
FR2306551A1
FR2306551A1 FR7609078A FR7609078A FR2306551A1 FR 2306551 A1 FR2306551 A1 FR 2306551A1 FR 7609078 A FR7609078 A FR 7609078A FR 7609078 A FR7609078 A FR 7609078A FR 2306551 A1 FR2306551 A1 FR 2306551A1
Authority
FR
France
Prior art keywords
pure
generating
bit rate
optically coupled
high bit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7609078A
Other languages
English (en)
Other versions
FR2306551B3 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2514140A external-priority patent/DE2514140C3/de
Priority claimed from DE2548796A external-priority patent/DE2548796C2/de
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of FR2306551A1 publication Critical patent/FR2306551A1/fr
Application granted granted Critical
Publication of FR2306551B3 publication Critical patent/FR2306551B3/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06213—Amplitude modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1021—Coupled cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4006—Injection locking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)
FR7609078A 1975-03-29 1976-03-29 Procede de generation d'un rayonnement a modes purs, coherent, module avec un debit binaire eleve, au moyen de deux lasers a injection couples optiquement mais pouvant etre commandes separement Granted FR2306551A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2514140A DE2514140C3 (de) 1975-03-29 1975-03-29 Verfahren zur Erzeugung von mit hoher Bitrate modulierter kohärenter, modenreiner Strahlung unter Verwendung zweier optisch gekoppelter, getrennt voneinander ansteuerbarer Injektionslaser und Anordnung zur Durchführung dieses Verfahrens
DE2548796A DE2548796C2 (de) 1975-10-31 1975-10-31 Laseranordnung

Publications (2)

Publication Number Publication Date
FR2306551A1 true FR2306551A1 (fr) 1976-10-29
FR2306551B3 FR2306551B3 (fr) 1978-12-22

Family

ID=25768708

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7609078A Granted FR2306551A1 (fr) 1975-03-29 1976-03-29 Procede de generation d'un rayonnement a modes purs, coherent, module avec un debit binaire eleve, au moyen de deux lasers a injection couples optiquement mais pouvant etre commandes separement

Country Status (4)

Country Link
US (1) US4101845A (fr)
JP (1) JPS51122388A (fr)
FR (1) FR2306551A1 (fr)
GB (1) GB1543405A (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0060033A1 (fr) * 1981-02-16 1982-09-15 British Telecommunications Source de lumière laser
EP0117734A2 (fr) * 1983-02-25 1984-09-05 AT&T Corp. Dispositif optique à plusieurs cavités et ses applications
EP0149042A2 (fr) * 1984-01-13 1985-07-24 Siemens Aktiengesellschaft Diode laser à semi-conducteur
EP0174729A1 (fr) * 1984-08-06 1986-03-19 BRITISH TELECOMMUNICATIONS public limited company Amplification optique
EP0762573A1 (fr) * 1995-08-25 1997-03-12 Anritsu Corporation Source lumière laser à longueur d'onde accordable utilisant une cavité composite, et laser à semi-conducteur à cavité composite

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4297651A (en) * 1979-08-23 1981-10-27 Northern Telecom Limited Methods for simultaneous suppression of laser pulsations and continuous monitoring of output power
JPS5717190A (en) * 1980-07-04 1982-01-28 Nippon Telegr & Teleph Corp <Ntt> Transmitter for optical communication using semiconductor laser
US4347612A (en) * 1980-08-25 1982-08-31 Xerox Corporation Semiconductor injection laser for high speed modulation
JPS5882586A (ja) * 1981-11-11 1983-05-18 Nec Corp 波長制御半導体レ−ザ
US4485474A (en) * 1981-12-10 1984-11-27 General Dynamics/Electronics Injection laser modulator with external resonator
JPS58180080A (ja) * 1982-04-15 1983-10-21 Mitsubishi Electric Corp 半導体レ−ザ装置
US4503541A (en) * 1982-11-10 1985-03-05 The United States Of America As Represented By The Secretary Of The Navy Controlled-linewidth laser source
US4785454A (en) * 1983-05-13 1988-11-15 American Telephone And Telegraph Company, At&T Bell Laboratories Stabilized cleaved-coupled cavity laser
US4734380A (en) * 1983-04-08 1988-03-29 American Telephone And Telegraph Company, At&T Bell Laboratories Multicavity optical device held together by metallic film
US4622671A (en) * 1983-02-25 1986-11-11 At&T Bell Laboratories Multicavity optical device
US4558449A (en) * 1983-07-08 1985-12-10 At&T Bell Laboratories Semiconductor laser with coupled loss modulator for optical telecommunications
US4583226A (en) * 1983-07-28 1986-04-15 At&T Bell Laboratories Coupled cavity injection laser
JPH0632332B2 (ja) * 1984-08-24 1994-04-27 日本電気株式会社 半導体レ−ザ装置
DE3434741A1 (de) * 1984-09-21 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Verkoppelte laserdioden-anordnung
US4736380A (en) * 1986-04-30 1988-04-05 Tektronix, Inc. Laser diode driver
US5070508A (en) * 1986-05-07 1991-12-03 General Electric Company Semiconductor laser with adjustable light beam
EP0283248B1 (fr) * 1987-03-17 1993-09-29 Kabushiki Kaisha Toshiba Dispositif laser
JP2533355B2 (ja) * 1988-03-11 1996-09-11 国際電信電話株式会社 分布帰還形半導体レ―ザ装置およびその電流注入方法
DE3834929A1 (de) * 1988-10-13 1990-04-19 Siemens Ag Wellenleiterreflektor fuer optoelektronische anwendungen und laser
JP2889618B2 (ja) * 1988-12-28 1999-05-10 株式会社リコー アレイ型半導体発光装置
US4903275A (en) * 1989-03-20 1990-02-20 General Electric Company Phase modulation semiconductor laser array
GB8909362D0 (en) * 1989-04-25 1989-06-14 British Telecomm High gain semiconductor laser amplifier package
US5001720A (en) * 1989-12-26 1991-03-19 At&T Bell Laboratories Hybrid narrow linewidth semiconductor laser with uniform FM response
FR2681191A1 (fr) * 1991-09-06 1993-03-12 France Telecom Composant integre laser-modulateur a super-reseau tres couple.
GB2260872B (en) * 1991-09-20 1995-10-25 Sharp Kk An optical transmission system
DE19721660A1 (de) * 1996-05-30 1997-12-04 Deutsche Telekom Ag Generator zur Erzeugung eines rauscharmen Signals hoher Frequenz
US6574260B2 (en) 2001-03-15 2003-06-03 Corning Lasertron Incorporated Electroabsorption modulated laser
DE10245717A1 (de) * 2002-09-25 2004-04-22 Technische Universität Berlin Verfahren und Vorrichtung zum Erzeugen eines optischen Laserpulses
KR100493089B1 (ko) * 2002-12-17 2005-06-02 삼성전자주식회사 집적광학장치
US20140050237A1 (en) * 2012-08-15 2014-02-20 Ranovus Inc. Discretely tunable locally seeded laser device
US9014222B2 (en) 2012-08-15 2015-04-21 Ranovus Inc. Discretely tunable laser device
WO2019099945A1 (fr) * 2017-11-16 2019-05-23 Murat Okandan Microsystèmes et sources de lumière cohérente hybride à semi-conducteur

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3295911A (en) * 1963-03-15 1967-01-03 Bell Telephone Labor Inc Semiconductor light modulators
US3303431A (en) * 1964-02-10 1967-02-07 Ibm Coupled semiconductor injection laser devices
US3434776A (en) * 1965-07-29 1969-03-25 Dow Corp Laser communication system using flexible silicone transmission line
US3517337A (en) * 1967-10-26 1970-06-23 Ibm Modulation of scanning beams in injection lasers
US3477041A (en) * 1968-06-05 1969-11-04 Rca Corp Production of amplitude modulated light by a solid state oscillator
US3815045A (en) * 1972-10-06 1974-06-04 Hitachi Ltd Method of and device for modulating directly a semiconductor laser
US3999146A (en) * 1974-08-23 1976-12-21 Nippon Electric Company, Ltd. Semiconductor laser device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0060033A1 (fr) * 1981-02-16 1982-09-15 British Telecommunications Source de lumière laser
EP0117734A2 (fr) * 1983-02-25 1984-09-05 AT&T Corp. Dispositif optique à plusieurs cavités et ses applications
EP0117734A3 (en) * 1983-02-25 1985-09-18 American Telephone And Telegraph Company Multicavity optical device and applications thereof
EP0149042A2 (fr) * 1984-01-13 1985-07-24 Siemens Aktiengesellschaft Diode laser à semi-conducteur
EP0149042A3 (en) * 1984-01-13 1987-05-13 Siemens Aktiengesellschaft Berlin Und Munchen Semiconductor laser diode
EP0174729A1 (fr) * 1984-08-06 1986-03-19 BRITISH TELECOMMUNICATIONS public limited company Amplification optique
EP0762573A1 (fr) * 1995-08-25 1997-03-12 Anritsu Corporation Source lumière laser à longueur d'onde accordable utilisant une cavité composite, et laser à semi-conducteur à cavité composite
US6141360A (en) * 1995-08-25 2000-10-31 Anritsu Corporation Tunable wavelength laser light source apparatus using a compound cavity such as a compound cavity semiconductor laser

Also Published As

Publication number Publication date
US4101845A (en) 1978-07-18
FR2306551B3 (fr) 1978-12-22
GB1543405A (en) 1979-04-04
JPS51122388A (en) 1976-10-26

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