JPS51122362A - Semiconductor microwave device - Google Patents

Semiconductor microwave device

Info

Publication number
JPS51122362A
JPS51122362A JP3510176A JP3510176A JPS51122362A JP S51122362 A JPS51122362 A JP S51122362A JP 3510176 A JP3510176 A JP 3510176A JP 3510176 A JP3510176 A JP 3510176A JP S51122362 A JPS51122362 A JP S51122362A
Authority
JP
Japan
Prior art keywords
microwave device
semiconductor microwave
semiconductor
microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3510176A
Other languages
English (en)
Japanese (ja)
Inventor
Aruman Maruku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS51122362A publication Critical patent/JPS51122362A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00—Generation of oscillations using transit-time effects
    • H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/608—Reflection amplifiers, i.e. amplifiers using a one-port amplifying element and a multiport coupler
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Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microwave Amplifiers (AREA)
JP3510176A 1975-03-28 1976-03-29 Semiconductor microwave device Pending JPS51122362A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7509920A FR2305857A1 (fr) 1975-03-28 1975-03-28 Dispositif hyperfrequence a semiconducteur, du type utilisant le temps de transit, et appareils generateurs ou amplificateurs utilisant ce dispositif

Publications (1)

Publication Number Publication Date
JPS51122362A true JPS51122362A (en) 1976-10-26

Family

ID=9153292

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3510176A Pending JPS51122362A (en) 1975-03-28 1976-03-29 Semiconductor microwave device

Country Status (5)

Country Link
US (1) US4034312A (OSRAM)
JP (1) JPS51122362A (OSRAM)
DE (1) DE2612807A1 (OSRAM)
FR (1) FR2305857A1 (OSRAM)
GB (1) GB1516945A (OSRAM)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4630006A (en) * 1985-05-31 1986-12-16 Anderson Keith V Current-tuned transistor oscillator
US6573731B1 (en) 1999-07-20 2003-06-03 Tokyo Electron Limited Electron density measurement and control system using plasma-induced changes in the frequency of a microwave oscillator
US6741944B1 (en) 1999-07-20 2004-05-25 Tokyo Electron Limited Electron density measurement and plasma process control system using a microwave oscillator locked to an open resonator containing the plasma
US6646386B1 (en) * 1999-07-20 2003-11-11 Tokyo Electron Limited Stabilized oscillator circuit for plasma density measurement
US6861844B1 (en) * 1999-07-21 2005-03-01 Tokyo Electron Limited Electron density measurement and plasma process control system using changes in the resonant frequency of an open resonator containing the plasma

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3699475A (en) * 1971-02-16 1972-10-17 Gte Automatic Electric Lab Inc Double-mode tuned microwave oscillator
GB1468578A (en) * 1974-04-25 1977-03-30 Standard Telephones Cables Ltd Microwave transistor circuit

Also Published As

Publication number Publication date
GB1516945A (en) 1978-07-05
US4034312A (en) 1977-07-05
FR2305857A1 (fr) 1976-10-22
DE2612807A1 (de) 1976-10-07
FR2305857B1 (OSRAM) 1978-02-03

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