FR2305857B1 - - Google Patents

Info

Publication number
FR2305857B1
FR2305857B1 FR7509920A FR7509920A FR2305857B1 FR 2305857 B1 FR2305857 B1 FR 2305857B1 FR 7509920 A FR7509920 A FR 7509920A FR 7509920 A FR7509920 A FR 7509920A FR 2305857 B1 FR2305857 B1 FR 2305857B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7509920A
Other languages
French (fr)
Other versions
FR2305857A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7509920A priority Critical patent/FR2305857A1/fr
Priority to GB1214876A priority patent/GB1516945A/en
Priority to DE19762612807 priority patent/DE2612807A1/de
Priority to US05/670,757 priority patent/US4034312A/en
Priority to JP3510176A priority patent/JPS51122362A/ja
Publication of FR2305857A1 publication Critical patent/FR2305857A1/fr
Application granted granted Critical
Publication of FR2305857B1 publication Critical patent/FR2305857B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00—Generation of oscillations using transit-time effects
    • H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/608—Reflection amplifiers, i.e. amplifiers using a one-port amplifying element and a multiport coupler
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Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microwave Amplifiers (AREA)
FR7509920A 1975-03-28 1975-03-28 Dispositif hyperfrequence a semiconducteur, du type utilisant le temps de transit, et appareils generateurs ou amplificateurs utilisant ce dispositif Granted FR2305857A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7509920A FR2305857A1 (fr) 1975-03-28 1975-03-28 Dispositif hyperfrequence a semiconducteur, du type utilisant le temps de transit, et appareils generateurs ou amplificateurs utilisant ce dispositif
GB1214876A GB1516945A (en) 1975-03-28 1976-03-25 Semiconductor microwave device of the kind utilizing the transit-time effects
DE19762612807 DE2612807A1 (de) 1975-03-28 1976-03-25 Unter ausnutzung der ladungstraeger- laufzeit arbeitende hoechstfrequenz- halbleitervorrichtung
US05/670,757 US4034312A (en) 1975-03-28 1976-03-26 Microwave oscillator using a transit time transistor
JP3510176A JPS51122362A (en) 1975-03-28 1976-03-29 Semiconductor microwave device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7509920A FR2305857A1 (fr) 1975-03-28 1975-03-28 Dispositif hyperfrequence a semiconducteur, du type utilisant le temps de transit, et appareils generateurs ou amplificateurs utilisant ce dispositif

Publications (2)

Publication Number Publication Date
FR2305857A1 FR2305857A1 (fr) 1976-10-22
FR2305857B1 true FR2305857B1 (OSRAM) 1978-02-03

Family

ID=9153292

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7509920A Granted FR2305857A1 (fr) 1975-03-28 1975-03-28 Dispositif hyperfrequence a semiconducteur, du type utilisant le temps de transit, et appareils generateurs ou amplificateurs utilisant ce dispositif

Country Status (5)

Country Link
US (1) US4034312A (OSRAM)
JP (1) JPS51122362A (OSRAM)
DE (1) DE2612807A1 (OSRAM)
FR (1) FR2305857A1 (OSRAM)
GB (1) GB1516945A (OSRAM)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4630006A (en) * 1985-05-31 1986-12-16 Anderson Keith V Current-tuned transistor oscillator
US6646386B1 (en) 1999-07-20 2003-11-11 Tokyo Electron Limited Stabilized oscillator circuit for plasma density measurement
US6573731B1 (en) 1999-07-20 2003-06-03 Tokyo Electron Limited Electron density measurement and control system using plasma-induced changes in the frequency of a microwave oscillator
US6741944B1 (en) 1999-07-20 2004-05-25 Tokyo Electron Limited Electron density measurement and plasma process control system using a microwave oscillator locked to an open resonator containing the plasma
US6861844B1 (en) * 1999-07-21 2005-03-01 Tokyo Electron Limited Electron density measurement and plasma process control system using changes in the resonant frequency of an open resonator containing the plasma

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3699475A (en) * 1971-02-16 1972-10-17 Gte Automatic Electric Lab Inc Double-mode tuned microwave oscillator
GB1468578A (en) * 1974-04-25 1977-03-30 Standard Telephones Cables Ltd Microwave transistor circuit

Also Published As

Publication number Publication date
JPS51122362A (en) 1976-10-26
GB1516945A (en) 1978-07-05
US4034312A (en) 1977-07-05
FR2305857A1 (fr) 1976-10-22
DE2612807A1 (de) 1976-10-07

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