JPS51120167A - Film field radiation type electson ray source manufacturing method - Google Patents

Film field radiation type electson ray source manufacturing method

Info

Publication number
JPS51120167A
JPS51120167A JP4432875A JP4432875A JPS51120167A JP S51120167 A JPS51120167 A JP S51120167A JP 4432875 A JP4432875 A JP 4432875A JP 4432875 A JP4432875 A JP 4432875A JP S51120167 A JPS51120167 A JP S51120167A
Authority
JP
Japan
Prior art keywords
electson
ray source
field radiation
radiation type
film field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4432875A
Other languages
Japanese (ja)
Inventor
Isamu Yuhito
Takashi Nishida
Tetsuya Hayashida
Yoshio Honma
Hiroshi Umezaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4432875A priority Critical patent/JPS51120167A/en
Publication of JPS51120167A publication Critical patent/JPS51120167A/en
Pending legal-status Critical Current

Links

Landscapes

  • Cold Cathode And The Manufacture (AREA)

Abstract

PURPOSE: To secure the method of manufacturina a voltage applying electrode for pulling out electrons the height of whose needle-shaped emitter can be controlled at will and which can be made to approach to about 1 μm of the tip of the neelde-shaped emitter.
COPYRIGHT: (C)1976,JPO&Japio
JP4432875A 1975-04-14 1975-04-14 Film field radiation type electson ray source manufacturing method Pending JPS51120167A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4432875A JPS51120167A (en) 1975-04-14 1975-04-14 Film field radiation type electson ray source manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4432875A JPS51120167A (en) 1975-04-14 1975-04-14 Film field radiation type electson ray source manufacturing method

Publications (1)

Publication Number Publication Date
JPS51120167A true JPS51120167A (en) 1976-10-21

Family

ID=12688427

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4432875A Pending JPS51120167A (en) 1975-04-14 1975-04-14 Film field radiation type electson ray source manufacturing method

Country Status (1)

Country Link
JP (1) JPS51120167A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5831378A (en) * 1992-02-14 1998-11-03 Micron Technology, Inc. Insulative barrier useful in field emission displays for reducing surface leakage
US6022256A (en) * 1996-11-06 2000-02-08 Micron Display Technology, Inc. Field emission display and method of making same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5831378A (en) * 1992-02-14 1998-11-03 Micron Technology, Inc. Insulative barrier useful in field emission displays for reducing surface leakage
US6066507A (en) * 1992-02-14 2000-05-23 Micron Technology, Inc. Method to form an insulative barrier useful in field emission displays for reducing surface leakage
US6022256A (en) * 1996-11-06 2000-02-08 Micron Display Technology, Inc. Field emission display and method of making same
US6181060B1 (en) 1996-11-06 2001-01-30 Micron Technology, Inc. Field emission display with plural dielectric layers

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