JPS51118966A - Method of glazing activated surface of semiconductor * holder for practising thereby and application of passivating pn transition thereof - Google Patents

Method of glazing activated surface of semiconductor * holder for practising thereby and application of passivating pn transition thereof

Info

Publication number
JPS51118966A
JPS51118966A JP2976776A JP2976776A JPS51118966A JP S51118966 A JPS51118966 A JP S51118966A JP 2976776 A JP2976776 A JP 2976776A JP 2976776 A JP2976776 A JP 2976776A JP S51118966 A JPS51118966 A JP S51118966A
Authority
JP
Japan
Prior art keywords
practising
passivating
glazing
holder
transition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2976776A
Other languages
English (en)
Japanese (ja)
Inventor
Hintsu Borufugangu
Kuuze Deiitaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
Original Assignee
BBC Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Switzerland filed Critical BBC Brown Boveri AG Switzerland
Publication of JPS51118966A publication Critical patent/JPS51118966A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10156—Shape being other than a cuboid at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10157—Shape being other than a cuboid at the active surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Casings For Electric Apparatus (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2976776A 1975-03-20 1976-03-18 Method of glazing activated surface of semiconductor * holder for practising thereby and application of passivating pn transition thereof Pending JPS51118966A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH355275A CH591762A5 (enrdf_load_stackoverflow) 1975-03-20 1975-03-20

Publications (1)

Publication Number Publication Date
JPS51118966A true JPS51118966A (en) 1976-10-19

Family

ID=4258446

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2976776A Pending JPS51118966A (en) 1975-03-20 1976-03-18 Method of glazing activated surface of semiconductor * holder for practising thereby and application of passivating pn transition thereof

Country Status (4)

Country Link
JP (1) JPS51118966A (enrdf_load_stackoverflow)
CH (1) CH591762A5 (enrdf_load_stackoverflow)
DE (2) DE2518666A1 (enrdf_load_stackoverflow)
FR (1) FR2305021A1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5367363A (en) * 1976-11-27 1978-06-15 Mitsubishi Electric Corp Semiconductor device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2469000A1 (fr) * 1979-10-30 1981-05-08 Silicium Semiconducteur Ssc Structure de thyristor tres haute tension glassive et son procede de fabrication
FR2515874A1 (fr) * 1981-11-05 1983-05-06 Comp Generale Electricite Procede d'encapsulation plastique de cellules solaires
DE3832732A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Leistungshalbleiterdiode
DE3832750A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Leistungshalbleiterbauelement

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1438826A (fr) * 1964-06-30 1966-05-13 Ibm Formation de films de verre par pulvérisation réactive
US3473959A (en) * 1964-08-10 1969-10-21 Licentia Gmbh Method for coating semiconductors and apparatus
US3437505A (en) * 1965-06-28 1969-04-08 Ibm Method for depositing glass particles on the entire exposed surface of an object
US3639975A (en) * 1969-07-30 1972-02-08 Gen Electric Glass encapsulated semiconductor device fabrication process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5367363A (en) * 1976-11-27 1978-06-15 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
CH591762A5 (enrdf_load_stackoverflow) 1977-09-30
DE7513490U (de) 1977-05-26
DE2518666A1 (de) 1976-09-30
FR2305021A1 (fr) 1976-10-15

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