JPS51114884A - Semiconductor ic devices and their manufacturing method - Google Patents

Semiconductor ic devices and their manufacturing method

Info

Publication number
JPS51114884A
JPS51114884A JP50040085A JP4008575A JPS51114884A JP S51114884 A JPS51114884 A JP S51114884A JP 50040085 A JP50040085 A JP 50040085A JP 4008575 A JP4008575 A JP 4008575A JP S51114884 A JPS51114884 A JP S51114884A
Authority
JP
Japan
Prior art keywords
semiconductor
devices
manufacturing
gaxal1
reliability
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50040085A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5441393B2 (enrdf_load_html_response
Inventor
Kota Kano
Atsushi Nagashima
Shotaro Umebachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP50040085A priority Critical patent/JPS51114884A/ja
Publication of JPS51114884A publication Critical patent/JPS51114884A/ja
Publication of JPS5441393B2 publication Critical patent/JPS5441393B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617Combinations of vertical BJTs and only diodes

Landscapes

  • Element Separation (AREA)
  • Junction Field-Effect Transistors (AREA)
JP50040085A 1975-04-01 1975-04-01 Semiconductor ic devices and their manufacturing method Granted JPS51114884A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50040085A JPS51114884A (en) 1975-04-01 1975-04-01 Semiconductor ic devices and their manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50040085A JPS51114884A (en) 1975-04-01 1975-04-01 Semiconductor ic devices and their manufacturing method

Publications (2)

Publication Number Publication Date
JPS51114884A true JPS51114884A (en) 1976-10-08
JPS5441393B2 JPS5441393B2 (enrdf_load_html_response) 1979-12-07

Family

ID=12571044

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50040085A Granted JPS51114884A (en) 1975-04-01 1975-04-01 Semiconductor ic devices and their manufacturing method

Country Status (1)

Country Link
JP (1) JPS51114884A (enrdf_load_html_response)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63229720A (ja) * 1987-03-18 1988-09-26 Nec Corp 化合物半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63229720A (ja) * 1987-03-18 1988-09-26 Nec Corp 化合物半導体装置

Also Published As

Publication number Publication date
JPS5441393B2 (enrdf_load_html_response) 1979-12-07

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