JPS51112188A - Ic transistor array for flat panel liquid crystal display and method of producing same - Google Patents

Ic transistor array for flat panel liquid crystal display and method of producing same

Info

Publication number
JPS51112188A
JPS51112188A JP50145997A JP14599775A JPS51112188A JP S51112188 A JPS51112188 A JP S51112188A JP 50145997 A JP50145997 A JP 50145997A JP 14599775 A JP14599775 A JP 14599775A JP S51112188 A JPS51112188 A JP S51112188A
Authority
JP
Japan
Prior art keywords
liquid crystal
crystal display
flat panel
transistor array
producing same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50145997A
Other languages
Japanese (ja)
Inventor
Emu Riyutsupu Aretsukusu
Jiii Deiru Hansu
Teii Ritsuputon Ruuisu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of JPS51112188A publication Critical patent/JPS51112188A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
JP50145997A 1974-12-09 1975-12-09 Ic transistor array for flat panel liquid crystal display and method of producing same Pending JPS51112188A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US53058674A 1974-12-09 1974-12-09

Publications (1)

Publication Number Publication Date
JPS51112188A true JPS51112188A (en) 1976-10-04

Family

ID=24114185

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50145997A Pending JPS51112188A (en) 1974-12-09 1975-12-09 Ic transistor array for flat panel liquid crystal display and method of producing same

Country Status (5)

Country Link
JP (1) JPS51112188A (en)
DE (1) DE2553739A1 (en)
FR (1) FR2294547A1 (en)
GB (1) GB1527098A (en)
NL (1) NL7514112A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57109322A (en) * 1980-11-03 1982-07-07 Texas Instruments Inc Flat panel display unit and method of producing monolithic semiconductor integrated circuit display unit used therefor
JPS5888779A (en) * 1981-11-20 1983-05-26 三菱電機株式会社 Matrix type liquid crystal display
JPS5888784A (en) * 1981-11-24 1983-05-26 セイコーエプソン株式会社 Liquid crystal display element
JPS58127367A (en) * 1982-01-26 1983-07-29 Seiko Epson Corp Shift register ic
JPH01217325A (en) * 1988-02-25 1989-08-30 Sharp Corp Liquid crystal display device
USRE35275E (en) * 1980-04-01 1996-06-18 Canon Kabushiki Kaisha Biasing liquid crystal displays having capacitors and transistors
US5859443A (en) * 1980-06-30 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6355941B1 (en) 1980-06-30 2002-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6900463B1 (en) 1980-06-30 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5327374A (en) * 1976-08-26 1978-03-14 Sharp Corp High voltage drive metal oxide semiconductor device
US4103297A (en) * 1976-12-20 1978-07-25 Hughes Aircraft Company Light-insensitive matrix addressed liquid crystal display system
FR2389955B1 (en) * 1977-05-05 1981-12-04 Thomson Csf
GB2081018B (en) * 1980-07-31 1985-06-26 Suwa Seikosha Kk Active matrix assembly for display device
JP2678017B2 (en) * 1988-06-13 1997-11-17 シャープ株式会社 Active matrix display device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2210387C3 (en) * 1972-03-03 1974-07-04 Siemens Ag, 1000 Berlin Und 8000 Muenchen Liquid crystal layer display screen and method of manufacturing the same
US3862360A (en) * 1973-04-18 1975-01-21 Hughes Aircraft Co Liquid crystal display system with integrated signal storage circuitry

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IEEE WESCON PAPERS#V9#N2=1965 *
PROCEEDINGS OF THE IEEE#N9=1969 *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE35275E (en) * 1980-04-01 1996-06-18 Canon Kabushiki Kaisha Biasing liquid crystal displays having capacitors and transistors
US5859443A (en) * 1980-06-30 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6355941B1 (en) 1980-06-30 2002-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6900463B1 (en) 1980-06-30 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JPS57109322A (en) * 1980-11-03 1982-07-07 Texas Instruments Inc Flat panel display unit and method of producing monolithic semiconductor integrated circuit display unit used therefor
JPS5888779A (en) * 1981-11-20 1983-05-26 三菱電機株式会社 Matrix type liquid crystal display
JPS5888784A (en) * 1981-11-24 1983-05-26 セイコーエプソン株式会社 Liquid crystal display element
JPS58127367A (en) * 1982-01-26 1983-07-29 Seiko Epson Corp Shift register ic
JPH01217325A (en) * 1988-02-25 1989-08-30 Sharp Corp Liquid crystal display device

Also Published As

Publication number Publication date
NL7514112A (en) 1976-06-11
FR2294547B1 (en) 1978-05-12
DE2553739A1 (en) 1976-06-10
GB1527098A (en) 1978-10-04
FR2294547A1 (en) 1976-07-09

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