JPS5097283A - - Google Patents

Info

Publication number
JPS5097283A
JPS5097283A JP49105434A JP10543474A JPS5097283A JP S5097283 A JPS5097283 A JP S5097283A JP 49105434 A JP49105434 A JP 49105434A JP 10543474 A JP10543474 A JP 10543474A JP S5097283 A JPS5097283 A JP S5097283A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP49105434A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5097283A publication Critical patent/JPS5097283A/ja
Pending legal-status Critical Current

Links

Classifications

    • H10P14/6324
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/01Manufacture or treatment
    • H10D44/041Manufacture or treatment having insulated gates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/0198Integrating together multiple components covered by H10D44/00, e.g. integrating charge coupled devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H10P14/69391
    • H10W20/40
    • H10P14/69215

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
JP49105434A 1973-12-26 1974-09-12 Pending JPS5097283A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/427,862 US3987538A (en) 1973-12-26 1973-12-26 Method of making devices having closely spaced electrodes

Publications (1)

Publication Number Publication Date
JPS5097283A true JPS5097283A (ja) 1975-08-02

Family

ID=23696583

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49105434A Pending JPS5097283A (ja) 1973-12-26 1974-09-12

Country Status (7)

Country Link
US (1) US3987538A (ja)
JP (1) JPS5097283A (ja)
DD (1) DD115806A5 (ja)
DE (1) DE2461361A1 (ja)
FR (1) FR2256535B1 (ja)
GB (1) GB1456459A (ja)
RO (1) RO73370A (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1503411A (en) * 1976-01-16 1978-03-08 Nat Res Dev Gaas mosfet

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2041035C2 (de) * 1970-08-18 1982-10-28 Siemens AG, 1000 Berlin und 8000 München Verfahren zum gleichzeitigen elektrolytischen in bezug auf die Sperrfähigkeit selektiven Behandeln von mehreren in einer gemeinsamen Halbleiterscheibe erzeugten gleichen Halbleiterbauelementen
US3756924A (en) * 1971-04-01 1973-09-04 Texas Instruments Inc Method of fabricating a semiconductor device
US3775262A (en) * 1972-02-09 1973-11-27 Ncr Method of making insulated gate field effect transistor

Also Published As

Publication number Publication date
DE2461361A1 (de) 1975-07-10
GB1456459A (en) 1976-11-24
FR2256535B1 (ja) 1977-11-10
FR2256535A1 (ja) 1975-07-25
US3987538A (en) 1976-10-26
RO73370A (ro) 1982-12-06
DD115806A5 (ja) 1975-10-12

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