JPS5094886A - - Google Patents
Info
- Publication number
- JPS5094886A JPS5094886A JP174874A JP174874A JPS5094886A JP S5094886 A JPS5094886 A JP S5094886A JP 174874 A JP174874 A JP 174874A JP 174874 A JP174874 A JP 174874A JP S5094886 A JPS5094886 A JP S5094886A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP174874A JPS5094886A (ja) | 1973-12-22 | 1973-12-22 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP174874A JPS5094886A (ja) | 1973-12-22 | 1973-12-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5094886A true JPS5094886A (ja) | 1975-07-28 |
Family
ID=11510175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP174874A Pending JPS5094886A (ja) | 1973-12-22 | 1973-12-22 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5094886A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5941864A (ja) * | 1982-05-06 | 1984-03-08 | アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド | モノリシツク集積回路の製造方法 |
JPS59200457A (ja) * | 1983-04-18 | 1984-11-13 | アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド | 集積された絶縁ゲ−ト電界効果トランジスタを有するモノリシツク集積回路の製造方法 |
JPS63164462A (ja) * | 1986-12-26 | 1988-07-07 | Matsushita Electronics Corp | 半導体装置 |
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1973
- 1973-12-22 JP JP174874A patent/JPS5094886A/ja active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5941864A (ja) * | 1982-05-06 | 1984-03-08 | アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド | モノリシツク集積回路の製造方法 |
JPH0558265B2 (ja) * | 1982-05-06 | 1993-08-26 | Itt | |
JPS59200457A (ja) * | 1983-04-18 | 1984-11-13 | アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド | 集積された絶縁ゲ−ト電界効果トランジスタを有するモノリシツク集積回路の製造方法 |
JPS63164462A (ja) * | 1986-12-26 | 1988-07-07 | Matsushita Electronics Corp | 半導体装置 |