JPS509156B1 - - Google Patents
Info
- Publication number
- JPS509156B1 JPS509156B1 JP45089129A JP8912970A JPS509156B1 JP S509156 B1 JPS509156 B1 JP S509156B1 JP 45089129 A JP45089129 A JP 45089129A JP 8912970 A JP8912970 A JP 8912970A JP S509156 B1 JPS509156 B1 JP S509156B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/40—Thyristors with turn-on by field effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/138—Thyristors having built-in components the built-in components being FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
Landscapes
- Thyristors (AREA)
- Semiconductor Memories (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP45089129A JPS509156B1 (enrdf_load_stackoverflow) | 1970-10-09 | 1970-10-09 | |
| GB4508071A GB1367325A (en) | 1970-10-09 | 1971-09-28 | Negative resistance semiconductor element |
| AU33959/71A AU434674B2 (en) | 1970-10-09 | 1971-09-28 | Negative resistance semiconductor element |
| CA124099A CA924420A (en) | 1970-10-09 | 1971-09-30 | Negative resistance semiconductor element |
| DE19712149761 DE2149761C3 (de) | 1970-10-09 | 1971-10-05 | Thyristor mit isolierter Feldsteuerungselektrode |
| NL7113825A NL7113825A (enrdf_load_stackoverflow) | 1970-10-09 | 1971-10-08 | |
| FR7136321A FR2110326B1 (enrdf_load_stackoverflow) | 1970-10-09 | 1971-10-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP45089129A JPS509156B1 (enrdf_load_stackoverflow) | 1970-10-09 | 1970-10-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS509156B1 true JPS509156B1 (enrdf_load_stackoverflow) | 1975-04-10 |
Family
ID=13962261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP45089129A Pending JPS509156B1 (enrdf_load_stackoverflow) | 1970-10-09 | 1970-10-09 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS509156B1 (enrdf_load_stackoverflow) |
| CA (1) | CA924420A (enrdf_load_stackoverflow) |
| FR (1) | FR2110326B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1367325A (enrdf_load_stackoverflow) |
| NL (1) | NL7113825A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007536737A (ja) * | 2004-05-06 | 2007-12-13 | マイクロン テクノロジー， インク． | ラテラルサイリスタ及びトラッピング層を有するシリコン‐オン‐インシュレータ読み取り‐書き込み不揮発性メモリ |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4364073A (en) | 1980-03-25 | 1982-12-14 | Rca Corporation | Power MOSFET with an anode region |
| US4595941A (en) * | 1980-12-03 | 1986-06-17 | Rca Corporation | Protection circuit for integrated circuit devices |
| US4400711A (en) | 1981-03-31 | 1983-08-23 | Rca Corporation | Integrated circuit protection device |
| JPS61180472A (ja) * | 1985-02-05 | 1986-08-13 | Mitsubishi Electric Corp | 半導体装置 |
| US6229161B1 (en) * | 1998-06-05 | 2001-05-08 | Stanford University | Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches |
| US6690038B1 (en) | 1999-06-05 | 2004-02-10 | T-Ram, Inc. | Thyristor-based device over substrate surface |
| US6727528B1 (en) | 2001-03-22 | 2004-04-27 | T-Ram, Inc. | Thyristor-based device including trench dielectric isolation for thyristor-body regions |
| US6804162B1 (en) | 2001-04-05 | 2004-10-12 | T-Ram, Inc. | Read-modify-write memory using read-or-write banks |
| US6583452B1 (en) | 2001-12-17 | 2003-06-24 | T-Ram, Inc. | Thyristor-based device having extended capacitive coupling |
| US6832300B2 (en) | 2002-03-20 | 2004-12-14 | Hewlett-Packard Development Company, L.P. | Methods and apparatus for control of asynchronous cache |
| US6965129B1 (en) | 2002-11-06 | 2005-11-15 | T-Ram, Inc. | Thyristor-based device having dual control ports |
-
1970
- 1970-10-09 JP JP45089129A patent/JPS509156B1/ja active Pending
-
1971
- 1971-09-28 GB GB4508071A patent/GB1367325A/en not_active Expired
- 1971-09-30 CA CA124099A patent/CA924420A/en not_active Expired
- 1971-10-08 NL NL7113825A patent/NL7113825A/xx not_active Application Discontinuation
- 1971-10-08 FR FR7136321A patent/FR2110326B1/fr not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007536737A (ja) * | 2004-05-06 | 2007-12-13 | マイクロン テクノロジー， インク． | ラテラルサイリスタ及びトラッピング層を有するシリコン‐オン‐インシュレータ読み取り‐書き込み不揮発性メモリ |
| JP4915592B2 (ja) * | 2004-05-06 | 2012-04-11 | マイクロン テクノロジー， インク． | ラテラルサイリスタ及びトラッピング層を有するシリコン‐オン‐インシュレータ読み取り‐書き込み不揮発性メモリ |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2110326A1 (enrdf_load_stackoverflow) | 1972-06-02 |
| FR2110326B1 (enrdf_load_stackoverflow) | 1977-04-22 |
| DE2149761B2 (de) | 1976-08-05 |
| DE2149761A1 (de) | 1972-04-13 |
| GB1367325A (en) | 1974-09-18 |
| NL7113825A (enrdf_load_stackoverflow) | 1972-04-11 |
| CA924420A (en) | 1973-04-10 |
| AU3395971A (en) | 1973-04-05 |