JPS508484A - - Google Patents

Info

Publication number
JPS508484A
JPS508484A JP5562273A JP5562273A JPS508484A JP S508484 A JPS508484 A JP S508484A JP 5562273 A JP5562273 A JP 5562273A JP 5562273 A JP5562273 A JP 5562273A JP S508484 A JPS508484 A JP S508484A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5562273A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP5562273A priority Critical patent/JPS508484A/ja
Publication of JPS508484A publication Critical patent/JPS508484A/ja
Pending legal-status Critical Current

Links

JP5562273A 1973-05-21 1973-05-21 Pending JPS508484A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5562273A JPS508484A (ja) 1973-05-21 1973-05-21

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5562273A JPS508484A (ja) 1973-05-21 1973-05-21

Publications (1)

Publication Number Publication Date
JPS508484A true JPS508484A (ja) 1975-01-28

Family

ID=13003866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5562273A Pending JPS508484A (ja) 1973-05-21 1973-05-21

Country Status (1)

Country Link
JP (1) JPS508484A (ja)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51110979A (ja) * 1975-03-25 1976-09-30 Fujitsu Ltd Handotaisochi
JPS51113472A (en) * 1975-03-31 1976-10-06 Fujitsu Ltd Semiconductor device
JPS51114074A (en) * 1975-03-31 1976-10-07 Sony Corp Insulation gate type field effect transistor
JPS51129182A (en) * 1975-05-02 1976-11-10 Mitsubishi Electric Corp Manufacturing method of semiconductor
JPS5494887A (en) * 1978-01-12 1979-07-26 Nec Corp Insulated gate type field effect transistor
JPS54121071A (en) * 1978-03-13 1979-09-19 Nec Corp Insulator gate type field effect semiconductor device
JPS55102269A (en) * 1979-01-29 1980-08-05 Agency Of Ind Science & Technol Method of fabricating semiconductor device
JPS57145376A (en) * 1982-02-01 1982-09-08 Fujitsu Ltd Semiconductor device
JPS5831576A (ja) * 1981-08-20 1983-02-24 Matsushita Electric Ind Co Ltd Ｍｏｓ型電界効果トランジスタ
JPS59101583A (ja) * 1982-11-30 1984-06-12 Nec Home Electronics Ltd 高周波点火装置
JPS59119046U (ja) * 1983-01-31 1984-08-11 シャープ株式会社 高出力高周波トランジスタ
JPS6099553U (ja) * 1984-10-25 1985-07-06 富士通株式会社 半導体装置
JPS6337667A (ja) * 1986-07-31 1988-02-18 Fujitsu Ltd 半導体装置の製造方法
JPH0198262A (ja) * 1987-10-12 1989-04-17 Nec Corp 絶縁ゲート電界効果トランジスタ
JPH0291972A (ja) * 1988-09-29 1990-03-30 Toshiba Corp 半導体装置の製造方法
JPH03293767A (ja) * 1990-10-19 1991-12-25 Semiconductor Res Found 半導体装置
JPH0621447A (ja) * 1992-04-27 1994-01-28 Internatl Business Mach Corp <Ibm> 短チャネル電界効果トランジスタ
JP2010232503A (ja) * 2009-03-27 2010-10-14 Furukawa Electric Co Ltd:The 半導体装置および半導体装置の製造方法

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51110979A (ja) * 1975-03-25 1976-09-30 Fujitsu Ltd Handotaisochi
JPS51113472A (en) * 1975-03-31 1976-10-06 Fujitsu Ltd Semiconductor device
JPS51114074A (en) * 1975-03-31 1976-10-07 Sony Corp Insulation gate type field effect transistor
JPS5653868B2 (ja) * 1975-03-31 1981-12-22
JPS51129182A (en) * 1975-05-02 1976-11-10 Mitsubishi Electric Corp Manufacturing method of semiconductor
JPS5494887A (en) * 1978-01-12 1979-07-26 Nec Corp Insulated gate type field effect transistor
JPS54121071A (en) * 1978-03-13 1979-09-19 Nec Corp Insulator gate type field effect semiconductor device
JPH0212012B2 (ja) * 1979-01-29 1990-03-16 Kogyo Gijutsu Incho
JPS55102269A (en) * 1979-01-29 1980-08-05 Agency Of Ind Science & Technol Method of fabricating semiconductor device
JPS5831576A (ja) * 1981-08-20 1983-02-24 Matsushita Electric Ind Co Ltd Ｍｏｓ型電界効果トランジスタ
JPS57145376A (en) * 1982-02-01 1982-09-08 Fujitsu Ltd Semiconductor device
JPH0376588B2 (ja) * 1982-02-01 1991-12-05 Fujitsu Ltd
JPS59101583A (ja) * 1982-11-30 1984-06-12 Nec Home Electronics Ltd 高周波点火装置
JPS6156423B2 (ja) * 1982-11-30 1986-12-02 Nippon Denki Hoomu Erekutoronikusu Kk
JPS59119046U (ja) * 1983-01-31 1984-08-11 シャープ株式会社 高出力高周波トランジスタ
JPH051084Y2 (ja) * 1983-01-31 1993-01-12
JPS6099553U (ja) * 1984-10-25 1985-07-06 富士通株式会社 半導体装置
JPS6337667A (ja) * 1986-07-31 1988-02-18 Fujitsu Ltd 半導体装置の製造方法
JPH0198262A (ja) * 1987-10-12 1989-04-17 Nec Corp 絶縁ゲート電界効果トランジスタ
JPH0291972A (ja) * 1988-09-29 1990-03-30 Toshiba Corp 半導体装置の製造方法
JPH03293767A (ja) * 1990-10-19 1991-12-25 Semiconductor Res Found 半導体装置
JPH0621447A (ja) * 1992-04-27 1994-01-28 Internatl Business Mach Corp <Ibm> 短チャネル電界効果トランジスタ
JP2010232503A (ja) * 2009-03-27 2010-10-14 Furukawa Electric Co Ltd:The 半導体装置および半導体装置の製造方法

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