JPS5079281A - - Google Patents

Info

Publication number
JPS5079281A
JPS5079281A JP49115733A JP11573374A JPS5079281A JP S5079281 A JPS5079281 A JP S5079281A JP 49115733 A JP49115733 A JP 49115733A JP 11573374 A JP11573374 A JP 11573374A JP S5079281 A JPS5079281 A JP S5079281A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP49115733A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5079281A publication Critical patent/JPS5079281A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
JP49115733A 1973-10-09 1974-10-09 Pending JPS5079281A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/404,494 US4083063A (en) 1973-10-09 1973-10-09 Gate turnoff thyristor with a pilot scr

Publications (1)

Publication Number Publication Date
JPS5079281A true JPS5079281A (ja) 1975-06-27

Family

ID=23599835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49115733A Pending JPS5079281A (ja) 1973-10-09 1974-10-09

Country Status (4)

Country Link
US (1) US4083063A (ja)
JP (1) JPS5079281A (ja)
DE (1) DE2447621A1 (ja)
GB (1) GB1487379A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5448978U (ja) * 1977-09-12 1979-04-05

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4238761A (en) * 1975-05-27 1980-12-09 Westinghouse Electric Corp. Integrated gate assisted turn-off, amplifying gate thyristor with narrow lipped turn-off diode
US4217504A (en) * 1975-08-04 1980-08-12 Licentia-Patent Verwaltungs Gmbh Semiconductor switch with thyristors
DE2748316C2 (de) * 1977-10-27 1986-09-04 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung zum Herabsetzen der Freiwerdezeit eines Thyristors
US4380114A (en) * 1979-04-11 1983-04-19 Teccor Electronics, Inc. Method of making a semiconductor switching device
SE423946B (sv) * 1980-10-08 1982-06-14 Asea Ab Tyristor anordnad for sjelvtendning
JPS6080264A (ja) * 1983-10-07 1985-05-08 Toshiba Corp 半導体装置
DE3521079A1 (de) * 1984-06-12 1985-12-12 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Rueckwaerts leitende vollsteuergate-thyristoranordnung
EP0167929B1 (de) * 1984-07-12 1988-02-10 Siemens Aktiengesellschaft Halbleiter-Leistungsschalter mit Thyristor
JPS6418200U (ja) * 1987-07-20 1989-01-30
FR2708811B1 (fr) * 1993-08-06 1995-10-20 Sgs Thomson Microelectronics Thyristor à amplification de gachette à courant de maintien accru.
US6278054B1 (en) * 1998-05-28 2001-08-21 Tecstar Power Systems, Inc. Solar cell having an integral monolithically grown bypass diode
US6864414B2 (en) * 2001-10-24 2005-03-08 Emcore Corporation Apparatus and method for integral bypass diode in solar cells
CN1306620C (zh) * 2003-01-07 2007-03-21 周立敬 硅过压保护管
US7622796B2 (en) * 2005-09-13 2009-11-24 Alpha And Omega Semiconductor Limited Semiconductor package having a bridged plate interconnection
US20070057368A1 (en) * 2005-09-13 2007-03-15 Yueh-Se Ho Semiconductor package having plate interconnections
US7683464B2 (en) * 2005-09-13 2010-03-23 Alpha And Omega Semiconductor Incorporated Semiconductor package having dimpled plate interconnections
US8680658B2 (en) * 2008-05-30 2014-03-25 Alpha And Omega Semiconductor Incorporated Conductive clip for semiconductor device package

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3401320A (en) * 1966-05-12 1968-09-10 Int Rectifier Corp Positive pulse turn-off controlled rectifier
SE318654B (ja) * 1967-06-30 1969-12-15 Asea Ab
US3579060A (en) * 1969-03-21 1971-05-18 Gen Electric Thyristor with improved current and voltage handling characteristics
GB1263174A (en) * 1969-06-11 1972-02-09 Westinghouse Brake & Signal Semiconductor device
US3611066A (en) * 1969-12-12 1971-10-05 Gen Electric Thyristor with integrated ballasted gate auxiliary thyristor portion
GB1303338A (ja) * 1970-10-06 1973-01-17
DE2141627C3 (de) * 1971-08-19 1979-06-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
US3694670A (en) * 1971-10-26 1972-09-26 Joseph M Marzolf Easily switched silicon controlled rectifier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5448978U (ja) * 1977-09-12 1979-04-05

Also Published As

Publication number Publication date
GB1487379A (en) 1977-09-28
US4083063A (en) 1978-04-04
DE2447621A1 (de) 1975-04-10

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