JPS50786A - - Google Patents
Info
- Publication number
- JPS50786A JPS50786A JP48125576A JP12557673A JPS50786A JP S50786 A JPS50786 A JP S50786A JP 48125576 A JP48125576 A JP 48125576A JP 12557673 A JP12557673 A JP 12557673A JP S50786 A JPS50786 A JP S50786A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE14522/72A SE361232B (ja) | 1972-11-09 | 1972-11-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS50786A true JPS50786A (ja) | 1975-01-07 |
Family
ID=20299252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP48125576A Pending JPS50786A (ja) | 1972-11-09 | 1973-11-09 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3892596A (ja) |
| JP (1) | JPS50786A (ja) |
| DE (1) | DE2355626A1 (ja) |
| FR (1) | FR2206588B1 (ja) |
| GB (1) | GB1384680A (ja) |
| SE (1) | SE361232B (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52134471A (en) * | 1976-05-03 | 1977-11-10 | Ebauches Tavannes Sa | Date calender clock movement |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3930893A (en) * | 1975-03-03 | 1976-01-06 | Honeywell Information Systems, Inc. | Conductivity connected charge-coupled device fabrication process |
| JPS588588B2 (ja) * | 1975-05-28 | 1983-02-16 | 株式会社日立製作所 | 半導体集積回路 |
| US4001869A (en) * | 1975-06-09 | 1977-01-04 | Sprague Electric Company | Mos-capacitor for integrated circuits |
| US4204131A (en) * | 1977-10-11 | 1980-05-20 | Mostek Corporation | Depletion controlled switch |
| US4155778A (en) * | 1977-12-30 | 1979-05-22 | International Business Machines Corporation | Forming semiconductor devices having ion implanted and diffused regions |
| US5504363A (en) * | 1992-09-02 | 1996-04-02 | Motorola Inc. | Semiconductor device |
| US5702959A (en) * | 1995-05-31 | 1997-12-30 | Texas Instruments Incorporated | Method for making an isolated vertical transistor |
| US6765290B2 (en) * | 2002-04-02 | 2004-07-20 | Intersil Americas Inc. | Arrangement for back-biasing multiple integrated circuit substrates at maximum supply voltage among all circuits |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3341754A (en) * | 1966-01-20 | 1967-09-12 | Ion Physics Corp | Semiconductor resistor containing interstitial and substitutional ions formed by an ion implantation method |
| US3548269A (en) * | 1968-12-03 | 1970-12-15 | Sprague Electric Co | Resistive layer semiconductive device |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3448344A (en) * | 1966-03-15 | 1969-06-03 | Westinghouse Electric Corp | Mosaic of semiconductor elements interconnected in an xy matrix |
| FR1527898A (fr) * | 1967-03-16 | 1968-06-07 | Radiotechnique Coprim Rtc | Agencement de dispositifs semi-conducteurs portés par un support commun et son procédé de fabrication |
| US3489963A (en) * | 1967-06-16 | 1970-01-13 | Ibm | Integrated differential transistor |
| GB1233545A (ja) * | 1967-08-18 | 1971-05-26 | ||
| GB1226899A (ja) * | 1968-07-17 | 1971-03-31 | ||
| BE759667A (fr) * | 1969-12-01 | 1971-06-01 | Philips Nv | Procede permettant la fabrication d'un dispositif semiconducteur, et dispositif semiconducteur obtenu par la mise en oeuvre de ce procede |
| GB1307546A (en) * | 1970-05-22 | 1973-02-21 | Mullard Ltd | Methods of manufacturing semiconductor devices |
| AU464038B2 (en) * | 1970-12-09 | 1975-08-14 | Philips Nv | Improvements in and relating to semiconductor devices |
| US3648125A (en) * | 1971-02-02 | 1972-03-07 | Fairchild Camera Instr Co | Method of fabricating integrated circuits with oxidized isolation and the resulting structure |
-
1972
- 1972-11-09 SE SE14522/72A patent/SE361232B/xx unknown
-
1973
- 1973-10-25 US US409761A patent/US3892596A/en not_active Expired - Lifetime
- 1973-11-05 DE DE19732355626 patent/DE2355626A1/de active Pending
- 1973-11-06 GB GB5154573A patent/GB1384680A/en not_active Expired
- 1973-11-08 FR FR7339684A patent/FR2206588B1/fr not_active Expired
- 1973-11-09 JP JP48125576A patent/JPS50786A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3341754A (en) * | 1966-01-20 | 1967-09-12 | Ion Physics Corp | Semiconductor resistor containing interstitial and substitutional ions formed by an ion implantation method |
| US3548269A (en) * | 1968-12-03 | 1970-12-15 | Sprague Electric Co | Resistive layer semiconductive device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52134471A (en) * | 1976-05-03 | 1977-11-10 | Ebauches Tavannes Sa | Date calender clock movement |
Also Published As
| Publication number | Publication date |
|---|---|
| US3892596A (en) | 1975-07-01 |
| FR2206588A1 (ja) | 1974-06-07 |
| DE2355626A1 (de) | 1974-05-30 |
| FR2206588B1 (ja) | 1977-06-03 |
| GB1384680A (en) | 1975-02-19 |
| SE361232B (ja) | 1973-10-22 |
| AU6163873A (en) | 1975-04-24 |