JPS5075380A - - Google Patents

Info

Publication number
JPS5075380A
JPS5075380A JP49121891A JP12189174A JPS5075380A JP S5075380 A JPS5075380 A JP S5075380A JP 49121891 A JP49121891 A JP 49121891A JP 12189174 A JP12189174 A JP 12189174A JP S5075380 A JPS5075380 A JP S5075380A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49121891A
Other versions
JPS5410433B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5075380A publication Critical patent/JPS5075380A/ja
Publication of JPS5410433B2 publication Critical patent/JPS5410433B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/813—Combinations of field-effect devices and capacitor only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP12189174A 1973-10-29 1974-10-22 Expired JPS5410433B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US410678A US3911466A (en) 1973-10-29 1973-10-29 Digitally controllable enhanced capacitor

Publications (2)

Publication Number Publication Date
JPS5075380A true JPS5075380A (ja) 1975-06-20
JPS5410433B2 JPS5410433B2 (ja) 1979-05-07

Family

ID=23625752

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12189174A Expired JPS5410433B2 (ja) 1973-10-29 1974-10-22

Country Status (5)

Country Link
US (1) US3911466A (ja)
JP (1) JPS5410433B2 (ja)
DE (1) DE2451364C2 (ja)
FR (1) FR2249446B1 (ja)
GB (1) GB1484295A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS528758A (en) * 1975-07-03 1977-01-22 Motorola Inc Temperature compensating oscillator

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4083045A (en) * 1975-07-03 1978-04-04 Motorola, Inc. Mos analog to digital converter
NL7609587A (nl) * 1975-09-08 1977-03-10 Ncr Co Elektrisch afstembare mnos-capaciteit.
US4190778A (en) * 1976-01-09 1980-02-26 Siemens Aktiengesellschaft A.C. supplied integrated semi-conductor logic circuit
EP0093818A1 (de) * 1982-05-07 1983-11-16 Deutsche ITT Industries GmbH Monolithisch integrierte Schaltung mit integrierten Kondensatoren
US5576565A (en) * 1993-03-31 1996-11-19 Matsushita Electric Industrial Co., Ltd. MIS capacitor and a semiconductor device utilizing said MIS capacitor
JP3173327B2 (ja) * 1995-06-16 2001-06-04 富士通株式会社 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1514431C3 (de) * 1965-04-07 1974-08-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Halbleiteranordnung mit pn-Übergang zur Verwendung als spannungsabhängige Kapazität
US3535600A (en) * 1968-10-10 1970-10-20 Gen Electric Mos varactor diode
US3612964A (en) * 1969-01-06 1971-10-12 Mitsubishi Electric Corp Mis-type variable capacitance semiconductor device
US3652906A (en) * 1970-03-24 1972-03-28 Alton O Christensen Mosfet decoder topology
US3704384A (en) * 1971-03-30 1972-11-28 Ibm Monolithic capacitor structure
JPS5137151B2 (ja) * 1971-09-08 1976-10-14
BE789501A (fr) * 1971-09-30 1973-03-29 Siemens Ag Condensateur electrique dans un circuit integre, utilise notamment comme memoire pour une memoire a semiconducteur

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS528758A (en) * 1975-07-03 1977-01-22 Motorola Inc Temperature compensating oscillator

Also Published As

Publication number Publication date
DE2451364C2 (de) 1982-12-09
GB1484295A (en) 1977-09-01
DE2451364A1 (de) 1975-05-07
FR2249446A1 (ja) 1975-05-23
FR2249446B1 (ja) 1978-07-13
US3911466A (en) 1975-10-07
JPS5410433B2 (ja) 1979-05-07

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