JPS5066181A - - Google Patents
Info
- Publication number
- JPS5066181A JPS5066181A JP11392373A JP11392373A JPS5066181A JP S5066181 A JPS5066181 A JP S5066181A JP 11392373 A JP11392373 A JP 11392373A JP 11392373 A JP11392373 A JP 11392373A JP S5066181 A JPS5066181 A JP S5066181A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11392373A JPS5066181A (ja) | 1973-10-12 | 1973-10-12 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11392373A JPS5066181A (ja) | 1973-10-12 | 1973-10-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5066181A true JPS5066181A (ja) | 1975-06-04 |
Family
ID=14624562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11392373A Pending JPS5066181A (ja) | 1973-10-12 | 1973-10-12 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5066181A (ja) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51114074A (en) * | 1975-03-31 | 1976-10-07 | Sony Corp | Insulation gate type field effect transistor |
| JPS51147184A (en) * | 1975-06-11 | 1976-12-17 | Toshiba Corp | Method of mawufacturing of mosic circuit device |
| JPS5362986A (en) * | 1976-11-18 | 1978-06-05 | Toshiba Corp | Semiconductor device |
| JPS5384571A (en) * | 1976-12-29 | 1978-07-26 | Fujitsu Ltd | Insulating gate type field effect transistor and its manufacture |
| JPS58115863A (ja) * | 1981-12-28 | 1983-07-09 | Matsushita Electric Ind Co Ltd | 絶縁ゲ−ト型電界効果半導体装置およびその製造方法 |
| JPH03181136A (ja) * | 1989-12-11 | 1991-08-07 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPH05121737A (ja) * | 1991-07-15 | 1993-05-18 | Nec Corp | 半導体装置の製造方法 |
| JPH08172193A (ja) * | 1995-09-11 | 1996-07-02 | Seiko Epson Corp | 半導体装置 |
-
1973
- 1973-10-12 JP JP11392373A patent/JPS5066181A/ja active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51114074A (en) * | 1975-03-31 | 1976-10-07 | Sony Corp | Insulation gate type field effect transistor |
| JPS5653868B2 (ja) * | 1975-03-31 | 1981-12-22 | ||
| JPS51147184A (en) * | 1975-06-11 | 1976-12-17 | Toshiba Corp | Method of mawufacturing of mosic circuit device |
| JPS5362986A (en) * | 1976-11-18 | 1978-06-05 | Toshiba Corp | Semiconductor device |
| JPS5384571A (en) * | 1976-12-29 | 1978-07-26 | Fujitsu Ltd | Insulating gate type field effect transistor and its manufacture |
| JPS576706B2 (ja) * | 1976-12-29 | 1982-02-06 | ||
| JPS58115863A (ja) * | 1981-12-28 | 1983-07-09 | Matsushita Electric Ind Co Ltd | 絶縁ゲ−ト型電界効果半導体装置およびその製造方法 |
| JPH03181136A (ja) * | 1989-12-11 | 1991-08-07 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPH05121737A (ja) * | 1991-07-15 | 1993-05-18 | Nec Corp | 半導体装置の製造方法 |
| JPH08172193A (ja) * | 1995-09-11 | 1996-07-02 | Seiko Epson Corp | 半導体装置 |
| JP2591518B2 (ja) * | 1995-09-11 | 1997-03-19 | セイコーエプソン株式会社 | 半導体装置 |