JPS5062389A - - Google Patents
Info
- Publication number
- JPS5062389A JPS5062389A JP48109264A JP10926473A JPS5062389A JP S5062389 A JPS5062389 A JP S5062389A JP 48109264 A JP48109264 A JP 48109264A JP 10926473 A JP10926473 A JP 10926473A JP S5062389 A JPS5062389 A JP S5062389A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP48109264A JPS5062389A (fr) | 1973-10-01 | 1973-10-01 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP48109264A JPS5062389A (fr) | 1973-10-01 | 1973-10-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5062389A true JPS5062389A (fr) | 1975-05-28 |
Family
ID=14505750
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP48109264A Pending JPS5062389A (fr) | 1973-10-01 | 1973-10-01 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5062389A (fr) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55127082A (en) * | 1979-03-23 | 1980-10-01 | Nec Corp | Bias voltage generating circuit of avalanche photodiode |
| JPS57188887A (en) * | 1981-05-15 | 1982-11-19 | Nec Corp | Avalanche photodiode package |
| WO2020121857A1 (fr) * | 2018-12-12 | 2020-06-18 | 浜松ホトニクス株式会社 | Photodétecteur et procédé de fabrication de photodétecteur |
| WO2020121858A1 (fr) * | 2018-12-12 | 2020-06-18 | 浜松ホトニクス株式会社 | Photodétecteur et procédé de fabrication de photodétecteur |
| CN113167640A (zh) * | 2018-12-12 | 2021-07-23 | 浜松光子学株式会社 | 光检测装置 |
| US11513002B2 (en) | 2018-12-12 | 2022-11-29 | Hamamatsu Photonics K.K. | Light detection device having temperature compensated gain in avalanche photodiode |
| US11901379B2 (en) | 2018-12-12 | 2024-02-13 | Hamamatsu Photonics K.K. | Photodetector |
-
1973
- 1973-10-01 JP JP48109264A patent/JPS5062389A/ja active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55127082A (en) * | 1979-03-23 | 1980-10-01 | Nec Corp | Bias voltage generating circuit of avalanche photodiode |
| JPS57188887A (en) * | 1981-05-15 | 1982-11-19 | Nec Corp | Avalanche photodiode package |
| WO2020121857A1 (fr) * | 2018-12-12 | 2020-06-18 | 浜松ホトニクス株式会社 | Photodétecteur et procédé de fabrication de photodétecteur |
| WO2020121858A1 (fr) * | 2018-12-12 | 2020-06-18 | 浜松ホトニクス株式会社 | Photodétecteur et procédé de fabrication de photodétecteur |
| CN113167640A (zh) * | 2018-12-12 | 2021-07-23 | 浜松光子学株式会社 | 光检测装置 |
| CN113167643A (zh) * | 2018-12-12 | 2021-07-23 | 浜松光子学株式会社 | 光检测装置及光检测装置的制造方法 |
| CN113167642A (zh) * | 2018-12-12 | 2021-07-23 | 浜松光子学株式会社 | 光检测装置和光检测装置的制造方法 |
| JPWO2020121857A1 (ja) * | 2018-12-12 | 2021-11-04 | 浜松ホトニクス株式会社 | 光検出装置及び光検出装置の製造方法 |
| JPWO2020121858A1 (ja) * | 2018-12-12 | 2021-11-04 | 浜松ホトニクス株式会社 | 光検出装置及び光検出装置の製造方法 |
| US11513002B2 (en) | 2018-12-12 | 2022-11-29 | Hamamatsu Photonics K.K. | Light detection device having temperature compensated gain in avalanche photodiode |
| US11561131B2 (en) | 2018-12-12 | 2023-01-24 | Hamamatsu Photonics K.K. | Determination method and light detection device |
| US11901379B2 (en) | 2018-12-12 | 2024-02-13 | Hamamatsu Photonics K.K. | Photodetector |
| US11927478B2 (en) | 2018-12-12 | 2024-03-12 | Hamamatsu Photonics K.K. | Light detection device |
| CN113167643B (zh) * | 2018-12-12 | 2024-05-28 | 浜松光子学株式会社 | 光检测装置及光检测装置的制造方法 |