JPS5051675A - - Google Patents
Info
- Publication number
- JPS5051675A JPS5051675A JP49093839A JP9383974A JPS5051675A JP S5051675 A JPS5051675 A JP S5051675A JP 49093839 A JP49093839 A JP 49093839A JP 9383974 A JP9383974 A JP 9383974A JP S5051675 A JPS5051675 A JP S5051675A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
- H10D30/831—Vertical FETs having PN junction gate electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/026—Deposition thru hole in mask
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7330278A FR2241875B1 (enExample) | 1973-08-21 | 1973-08-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5051675A true JPS5051675A (enExample) | 1975-05-08 |
| JPS5223232B2 JPS5223232B2 (enExample) | 1977-06-22 |
Family
ID=9124148
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49093839A Expired JPS5223232B2 (enExample) | 1973-08-21 | 1974-08-17 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3951694A (enExample) |
| JP (1) | JPS5223232B2 (enExample) |
| CA (1) | CA1008974A (enExample) |
| DE (1) | DE2438109A1 (enExample) |
| FR (1) | FR2241875B1 (enExample) |
| GB (1) | GB1479974A (enExample) |
| IT (1) | IT1020027B (enExample) |
| NL (1) | NL7410978A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6074447U (ja) * | 1983-10-28 | 1985-05-25 | 東北金属工業株式会社 | 密閉構造の電子装置 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2460037A1 (fr) * | 1979-06-22 | 1981-01-16 | Thomson Csf | Procede d'auto-alignement de regions differemment dopees d'une structure de semi-conducteur |
| DE2945854A1 (de) * | 1979-11-13 | 1981-05-21 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Ionenimplantationsverfahren |
| US4557794A (en) * | 1984-05-07 | 1985-12-10 | Rca Corporation | Method for forming a void-free monocrystalline epitaxial layer on a mask |
| GB9326344D0 (en) * | 1993-12-23 | 1994-02-23 | Texas Instruments Ltd | High voltage transistor for sub micron cmos processes |
| EP2901492A4 (en) * | 2012-09-25 | 2016-06-22 | Pst Sensors Pty Ltd | POWER CIRCUIT TRANSISTOR |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3413531A (en) * | 1966-09-06 | 1968-11-26 | Ion Physics Corp | High frequency field effect transistor |
| US3431150A (en) * | 1966-10-07 | 1969-03-04 | Us Air Force | Process for implanting grids in semiconductor devices |
| US3457632A (en) * | 1966-10-07 | 1969-07-29 | Us Air Force | Process for implanting buried layers in semiconductor devices |
| GB1269359A (en) * | 1968-08-22 | 1972-04-06 | Atomic Energy Authority Uk | Improvements in or relating to semiconductors and methods of doping semiconductors |
| GB1324507A (en) * | 1969-12-18 | 1973-07-25 | Mullard Ltd | Methods of manufacturing a semiconductor device |
| US3713922A (en) * | 1970-12-28 | 1973-01-30 | Bell Telephone Labor Inc | High resolution shadow masks and their preparation |
-
1973
- 1973-08-21 FR FR7330278A patent/FR2241875B1/fr not_active Expired
-
1974
- 1974-08-08 DE DE2438109A patent/DE2438109A1/de not_active Withdrawn
- 1974-08-15 CA CA207,137A patent/CA1008974A/en not_active Expired
- 1974-08-16 GB GB36189/74A patent/GB1479974A/en not_active Expired
- 1974-08-16 NL NL7410978A patent/NL7410978A/xx unknown
- 1974-08-17 JP JP49093839A patent/JPS5223232B2/ja not_active Expired
- 1974-08-19 IT IT26410/74A patent/IT1020027B/it active
- 1974-08-20 US US05/498,913 patent/US3951694A/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6074447U (ja) * | 1983-10-28 | 1985-05-25 | 東北金属工業株式会社 | 密閉構造の電子装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2241875A1 (enExample) | 1975-03-21 |
| JPS5223232B2 (enExample) | 1977-06-22 |
| IT1020027B (it) | 1977-12-20 |
| DE2438109A1 (de) | 1975-02-27 |
| US3951694A (en) | 1976-04-20 |
| CA1008974A (en) | 1977-04-19 |
| FR2241875B1 (enExample) | 1977-09-09 |
| GB1479974A (en) | 1977-07-13 |
| NL7410978A (nl) | 1975-02-25 |