JPS5050881A - - Google Patents
Info
- Publication number
- JPS5050881A JPS5050881A JP48099587A JP9958773A JPS5050881A JP S5050881 A JPS5050881 A JP S5050881A JP 48099587 A JP48099587 A JP 48099587A JP 9958773 A JP9958773 A JP 9958773A JP S5050881 A JPS5050881 A JP S5050881A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP48099587A JPS5050881A (ja) | 1973-09-04 | 1973-09-04 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP48099587A JPS5050881A (ja) | 1973-09-04 | 1973-09-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5050881A true JPS5050881A (ja) | 1975-05-07 |
Family
ID=14251212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP48099587A Pending JPS5050881A (ja) | 1973-09-04 | 1973-09-04 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5050881A (ja) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6110233A (ja) * | 1984-06-02 | 1986-01-17 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS6143481A (ja) * | 1984-08-08 | 1986-03-03 | Oki Electric Ind Co Ltd | シヨツトキゲ−ト電界効果トランジスタの製造方法 |
| JPS61140133A (ja) * | 1984-12-13 | 1986-06-27 | Toshiba Corp | 半導体装置の製造方法 |
| JPH01218018A (ja) * | 1988-02-18 | 1989-08-31 | Internatl Business Mach Corp <Ibm> | 半導体材料を高融点金属に変換する方法及び前記方法を利用して製造される半導体装置 |
| JPH01230249A (ja) * | 1988-03-10 | 1989-09-13 | Science & Tech Agency | 薄膜の形成方法 |
-
1973
- 1973-09-04 JP JP48099587A patent/JPS5050881A/ja active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6110233A (ja) * | 1984-06-02 | 1986-01-17 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS6143481A (ja) * | 1984-08-08 | 1986-03-03 | Oki Electric Ind Co Ltd | シヨツトキゲ−ト電界効果トランジスタの製造方法 |
| JPS61140133A (ja) * | 1984-12-13 | 1986-06-27 | Toshiba Corp | 半導体装置の製造方法 |
| JPH01218018A (ja) * | 1988-02-18 | 1989-08-31 | Internatl Business Mach Corp <Ibm> | 半導体材料を高融点金属に変換する方法及び前記方法を利用して製造される半導体装置 |
| JPH01230249A (ja) * | 1988-03-10 | 1989-09-13 | Science & Tech Agency | 薄膜の形成方法 |