JPS5046081A - - Google Patents
Info
- Publication number
- JPS5046081A JPS5046081A JP9647773A JP9647773A JPS5046081A JP S5046081 A JPS5046081 A JP S5046081A JP 9647773 A JP9647773 A JP 9647773A JP 9647773 A JP9647773 A JP 9647773A JP S5046081 A JPS5046081 A JP S5046081A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9647773A JPS5046081A (de) | 1973-08-28 | 1973-08-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9647773A JPS5046081A (de) | 1973-08-28 | 1973-08-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5046081A true JPS5046081A (de) | 1975-04-24 |
Family
ID=14166114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9647773A Pending JPS5046081A (de) | 1973-08-28 | 1973-08-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5046081A (de) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51134076A (en) * | 1975-05-15 | 1976-11-20 | Sony Corp | Insultation gate-type field- effect transistor |
| US4376286A (en) * | 1978-10-13 | 1983-03-08 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
| US4642666A (en) * | 1978-10-13 | 1987-02-10 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
| JPS6387769A (ja) * | 1987-07-17 | 1988-04-19 | Nec Corp | 電界効果トランジスタ |
| US4959699A (en) * | 1978-10-13 | 1990-09-25 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
| US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3404295A (en) * | 1964-11-30 | 1968-10-01 | Motorola Inc | High frequency and voltage transistor with added region for punch-through protection |
| GB1289650A (de) * | 1969-09-18 | 1972-09-20 |
-
1973
- 1973-08-28 JP JP9647773A patent/JPS5046081A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3404295A (en) * | 1964-11-30 | 1968-10-01 | Motorola Inc | High frequency and voltage transistor with added region for punch-through protection |
| GB1289650A (de) * | 1969-09-18 | 1972-09-20 |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51134076A (en) * | 1975-05-15 | 1976-11-20 | Sony Corp | Insultation gate-type field- effect transistor |
| JPS6027191B2 (ja) * | 1975-05-15 | 1985-06-27 | ソニー株式会社 | 絶縁ゲ−ト形電界効果トランジスタ |
| US4376286A (en) * | 1978-10-13 | 1983-03-08 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
| US4642666A (en) * | 1978-10-13 | 1987-02-10 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
| US4705759A (en) * | 1978-10-13 | 1987-11-10 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
| US4959699A (en) * | 1978-10-13 | 1990-09-25 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
| US5338961A (en) * | 1978-10-13 | 1994-08-16 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
| US5598018A (en) * | 1978-10-13 | 1997-01-28 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
| US5742087A (en) * | 1978-10-13 | 1998-04-21 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
| JPS6387769A (ja) * | 1987-07-17 | 1988-04-19 | Nec Corp | 電界効果トランジスタ |
| US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
| US6046473A (en) * | 1995-06-07 | 2000-04-04 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of MOS-gated power devices |