JPS5045527A - - Google Patents
Info
- Publication number
- JPS5045527A JPS5045527A JP49086691A JP8669174A JPS5045527A JP S5045527 A JPS5045527 A JP S5045527A JP 49086691 A JP49086691 A JP 49086691A JP 8669174 A JP8669174 A JP 8669174A JP S5045527 A JPS5045527 A JP S5045527A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US38387373A | 1973-07-30 | 1973-07-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5045527A true JPS5045527A (xx) | 1975-04-23 |
Family
ID=23515092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49086691A Pending JPS5045527A (xx) | 1973-07-30 | 1974-07-30 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS5045527A (xx) |
| DE (1) | DE2436648A1 (xx) |
| FR (1) | FR2246021A1 (xx) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5121450A (xx) * | 1974-08-15 | 1976-02-20 | Nippon Electric Co | |
| JP2011204347A (ja) * | 2010-03-04 | 2011-10-13 | Semiconductor Energy Lab Co Ltd | 半導体メモリ装置および半導体メモリ装置の駆動方法 |
| JP2014041689A (ja) * | 2010-04-07 | 2014-03-06 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP2015201251A (ja) * | 2010-11-12 | 2015-11-12 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2020025103A (ja) * | 2010-02-05 | 2020-02-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3533089A (en) * | 1969-05-16 | 1970-10-06 | Shell Oil Co | Single-rail mosfet memory with capacitive storage |
-
1974
- 1974-07-30 DE DE19742436648 patent/DE2436648A1/de active Pending
- 1974-07-30 JP JP49086691A patent/JPS5045527A/ja active Pending
- 1974-07-30 FR FR7426483A patent/FR2246021A1/fr not_active Withdrawn
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3533089A (en) * | 1969-05-16 | 1970-10-06 | Shell Oil Co | Single-rail mosfet memory with capacitive storage |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5121450A (xx) * | 1974-08-15 | 1976-02-20 | Nippon Electric Co | |
| JP2020025103A (ja) * | 2010-02-05 | 2020-02-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2011204347A (ja) * | 2010-03-04 | 2011-10-13 | Semiconductor Energy Lab Co Ltd | 半導体メモリ装置および半導体メモリ装置の駆動方法 |
| JP2014041689A (ja) * | 2010-04-07 | 2014-03-06 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP2015201251A (ja) * | 2010-11-12 | 2015-11-12 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9460772B2 (en) | 2010-11-12 | 2016-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2018029198A (ja) * | 2010-11-12 | 2018-02-22 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2019135773A (ja) * | 2010-11-12 | 2019-08-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR20200123070A (ko) * | 2010-11-12 | 2020-10-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 기억 장치 및 반도체 장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2436648A1 (de) | 1975-03-06 |
| FR2246021A1 (en) | 1975-04-25 |