JPS5044181A - - Google Patents

Info

Publication number
JPS5044181A
JPS5044181A JP49084075A JP8407574A JPS5044181A JP S5044181 A JPS5044181 A JP S5044181A JP 49084075 A JP49084075 A JP 49084075A JP 8407574 A JP8407574 A JP 8407574A JP S5044181 A JPS5044181 A JP S5044181A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49084075A
Other versions
JPS544346B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5044181A publication Critical patent/JPS5044181A/ja
Publication of JPS544346B2 publication Critical patent/JPS544346B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/108—Including a solid member other than seed or product contacting the liquid [e.g., crucible, immersed heating element]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP8407574A 1973-07-23 1974-07-22 Expired JPS544346B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US381500A US3884642A (en) 1973-07-23 1973-07-23 Radiantly heated crystal growing furnace

Publications (2)

Publication Number Publication Date
JPS5044181A true JPS5044181A (ja) 1975-04-21
JPS544346B2 JPS544346B2 (ja) 1979-03-06

Family

ID=23505276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8407574A Expired JPS544346B2 (ja) 1973-07-23 1974-07-22

Country Status (2)

Country Link
US (1) US3884642A (ja)
JP (1) JPS544346B2 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2414856C2 (de) * 1974-03-27 1983-01-27 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum Herstellen einer Halbleiterverbindung, insbesondere Galliumphosphid
DE2414776C2 (de) * 1974-03-27 1984-04-19 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum Herstellen einer Verbindung oder Legierung
DE2414888C2 (de) * 1974-03-27 1983-08-25 Siemens AG, 1000 Berlin und 8000 München Einrichtung zur Temperaturmessung
US4162293A (en) * 1974-03-27 1979-07-24 Siemens Aktiengesellschaft Apparatus for preparation of a compound or an alloy
US4421786A (en) * 1981-01-23 1983-12-20 Western Electric Co. Chemical vapor deposition reactor for silicon epitaxial processes
KR930006955B1 (ko) * 1990-12-07 1993-07-24 한국과학기술연구원 디렉트 모니터링 전기로를 이용한 수평대역용융 단결정 성장장치
US6800137B2 (en) 1995-06-16 2004-10-05 Phoenix Scientific Corporation Binary and ternary crystal purification and growth method and apparatus
US5993540A (en) * 1995-06-16 1999-11-30 Optoscint, Inc. Continuous crystal plate growth process and apparatus
US6139627A (en) * 1998-09-21 2000-10-31 The University Of Akron Transparent multi-zone crystal growth furnace and method for controlling the same
US6402840B1 (en) 1999-08-10 2002-06-11 Optoscint, Inc. Crystal growth employing embedded purification chamber

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2789039A (en) * 1953-08-25 1957-04-16 Rca Corp Method and apparatus for zone melting
US3036898A (en) * 1959-04-30 1962-05-29 Ibm Semiconductor zone refining and crystal growth
NL250835A (ja) * 1959-04-30
NL145151B (nl) * 1965-08-05 1975-03-17 Tno Werkwijze en inrichting voor zonesmelten.
US3560276A (en) * 1968-12-23 1971-02-02 Bell Telephone Labor Inc Technique for fabrication of multilayered semiconductor structure

Also Published As

Publication number Publication date
JPS544346B2 (ja) 1979-03-06
US3884642A (en) 1975-05-20

Similar Documents

Publication Publication Date Title
AR201758A1 (ja)
AU476761B2 (ja)
AU465372B2 (ja)
AR201235Q (ja)
AR201231Q (ja)
AU474593B2 (ja)
AU474511B2 (ja)
AU474838B2 (ja)
AU465453B2 (ja)
AU471343B2 (ja)
AU465434B2 (ja)
AU450229B2 (ja)
AU476714B2 (ja)
AR201229Q (ja)
AU466283B2 (ja)
AR199451A1 (ja)
AU476696B2 (ja)
AU472848B2 (ja)
AU477823B2 (ja)
AU461342B2 (ja)
AU471461B2 (ja)
AR200256A1 (ja)
AU476873B1 (ja)
AR210729A1 (ja)
AU477824B2 (ja)