JPS535867B2 - - Google Patents

Info

Publication number
JPS535867B2
JPS535867B2 JP2662273A JP2662273A JPS535867B2 JP S535867 B2 JPS535867 B2 JP S535867B2 JP 2662273 A JP2662273 A JP 2662273A JP 2662273 A JP2662273 A JP 2662273A JP S535867 B2 JPS535867 B2 JP S535867B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2662273A
Other versions
JPS49115768A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2662273A priority Critical patent/JPS535867B2/ja
Priority to US05/449,040 priority patent/US3986837A/en
Publication of JPS49115768A publication Critical patent/JPS49115768A/ja
Publication of JPS535867B2 publication Critical patent/JPS535867B2/ja
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003Heating or cooling of the melt or the crystallised material
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901Levitation, reduced gravity, microgravity, space
    • Y10S117/902Specified orientation, shape, crystallography, or size of seed or substrate
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]
JP2662273A 1973-03-08 1973-03-08 Expired JPS535867B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2662273A JPS535867B2 (ja) 1973-03-08 1973-03-08
US05/449,040 US3986837A (en) 1973-03-08 1974-03-07 Method of and apparatus for manufacturing single crystal compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2662273A JPS535867B2 (ja) 1973-03-08 1973-03-08

Publications (2)

Publication Number Publication Date
JPS49115768A JPS49115768A (ja) 1974-11-05
JPS535867B2 true JPS535867B2 (ja) 1978-03-02

Family

ID=12198558

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2662273A Expired JPS535867B2 (ja) 1973-03-08 1973-03-08

Country Status (2)

Country Link
US (1) US3986837A (ja)
JP (1) JPS535867B2 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4863553A (en) * 1982-11-15 1989-09-05 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of preparing radially homogenous mercury cadmium telluride crystals
DE3310827A1 (de) * 1983-03-24 1984-09-27 Bayer Ag, 5090 Leverkusen Verfahren zur herstellung von grobkristallinem silicium
JPS60215599A (ja) * 1984-04-06 1985-10-28 Hitachi Cable Ltd 化合物半導体単結晶の製造方法
JPS6114199A (ja) * 1984-06-29 1986-01-22 Hitachi Cable Ltd 化合物半導体単結晶の製造方法
US4876295A (en) 1987-03-11 1989-10-24 The Dow Chemical Company Flexible thermoplastic epoxy resin and coatings prepared therefrom

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2719799A (en) * 1952-11-13 1955-10-04 Rca Corp Zone melting furnace and method of zone melting
US2826666A (en) * 1954-02-15 1958-03-11 Tung Sol Electric Inc Improvement in apparatus for growing single crystals
US2962363A (en) * 1957-07-09 1960-11-29 Pacific Semiconductors Inc Crystal pulling apparatus and method
BE581195A (ja) * 1958-07-30
NL112210C (ja) * 1959-04-30
US3036898A (en) * 1959-04-30 1962-05-29 Ibm Semiconductor zone refining and crystal growth
US3211881A (en) * 1962-08-28 1965-10-12 Westinghouse Electric Corp Apparatus for zone heating
DE1444530B2 (de) * 1962-12-12 1970-10-01 Siemens AG, 1000 Berlin u. 8000 München Verfahren und Vorrichtung zum Herstellen von stabförmigem, einkristallinen Halbleitermaterial
US3233984A (en) * 1963-03-11 1966-02-08 Bell Telephone Labor Inc Support assembly for materials processing and method
US3401022A (en) * 1964-03-26 1968-09-10 Motorola Inc Apparatus for horizontal zone refining of semiconductive materials
US3560276A (en) * 1968-12-23 1971-02-02 Bell Telephone Labor Inc Technique for fabrication of multilayered semiconductor structure

Also Published As

Publication number Publication date
JPS49115768A (ja) 1974-11-05
US3986837A (en) 1976-10-19

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