JPS5040283A - - Google Patents

Info

Publication number
JPS5040283A
JPS5040283A JP49080821A JP8082174A JPS5040283A JP S5040283 A JPS5040283 A JP S5040283A JP 49080821 A JP49080821 A JP 49080821A JP 8082174 A JP8082174 A JP 8082174A JP S5040283 A JPS5040283 A JP S5040283A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49080821A
Other versions
JPS5419143B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5040283A publication Critical patent/JPS5040283A/ja
Publication of JPS5419143B2 publication Critical patent/JPS5419143B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP8082174A 1973-07-28 1974-07-16 Expired JPS5419143B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2338388A DE2338388C2 (de) 1973-07-28 1973-07-28 Feldeffekt-Halbleiteranordnung

Publications (2)

Publication Number Publication Date
JPS5040283A true JPS5040283A (ja) 1975-04-12
JPS5419143B2 JPS5419143B2 (ja) 1979-07-12

Family

ID=5888242

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8082174A Expired JPS5419143B2 (ja) 1973-07-28 1974-07-16

Country Status (5)

Country Link
JP (1) JPS5419143B2 (ja)
CA (1) CA1005930A (ja)
DE (1) DE2338388C2 (ja)
FR (1) FR2239017B1 (ja)
GB (1) GB1471282A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368177A (en) * 1976-11-30 1978-06-17 Toshiba Corp Mos type field effect transistor
JPS55118676A (en) * 1979-03-07 1980-09-11 Mitsubishi Electric Corp Semiconductor device
JPH02303065A (ja) * 1989-04-27 1990-12-17 Digital Equip Corp <Dec> １つのマスキング工程で決定される異なるしきい値電圧をもつ電界効果トランジスタを有する半導体チップとその製造方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5217771A (en) 1975-07-31 1977-02-09 Sony Corp Charge transfer device
US4129880A (en) * 1977-07-01 1978-12-12 International Business Machines Incorporated Channel depletion boundary modulation magnetic field sensor
US4163986A (en) * 1978-05-03 1979-08-07 International Business Machines Corporation Twin channel Lorentz coupled depletion width modulation effect magnetic field sensor
EP0225566A3 (en) * 1985-12-03 1989-07-26 Itt Industries, Inc. Permeable gate transistor
JP2609587B2 (ja) * 1986-04-21 1997-05-14 株式会社日立製作所 半導体装置
JPH06204253A (ja) * 1993-01-07 1994-07-22 Fujitsu Ltd 電界効果半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3374407A (en) * 1964-06-01 1968-03-19 Rca Corp Field-effect transistor with gate-insulator variations to achieve remote cutoff characteristic
US3417464A (en) * 1965-05-21 1968-12-24 Ibm Method for fabricating insulated-gate field-effect transistors
GB1145092A (en) * 1965-06-09 1969-03-12 Mullard Ltd Improvements in insulated gate field effect semiconductor devices
DE2044792A1 (de) * 1970-09-10 1972-03-23 Ibm Deutschland Feldeffekt-Transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368177A (en) * 1976-11-30 1978-06-17 Toshiba Corp Mos type field effect transistor
JPS55118676A (en) * 1979-03-07 1980-09-11 Mitsubishi Electric Corp Semiconductor device
JPH02303065A (ja) * 1989-04-27 1990-12-17 Digital Equip Corp <Dec> １つのマスキング工程で決定される異なるしきい値電圧をもつ電界効果トランジスタを有する半導体チップとその製造方法

Also Published As

Publication number Publication date
GB1471282A (en) 1977-04-21
CA1005930A (en) 1977-02-22
DE2338388C2 (de) 1982-04-15
JPS5419143B2 (ja) 1979-07-12
FR2239017A1 (ja) 1975-02-21
FR2239017B1 (ja) 1976-06-25
DE2338388A1 (de) 1975-02-13

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