JPS5039838A - - Google Patents
Info
- Publication number
- JPS5039838A JPS5039838A JP49078796A JP7879674A JPS5039838A JP S5039838 A JPS5039838 A JP S5039838A JP 49078796 A JP49078796 A JP 49078796A JP 7879674 A JP7879674 A JP 7879674A JP S5039838 A JPS5039838 A JP S5039838A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US378052A US3876991A (en) | 1973-07-11 | 1973-07-11 | Dual threshold, three transistor dynamic memory cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5039838A true JPS5039838A (ja) | 1975-04-12 |
Family
ID=23491536
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49078796A Pending JPS5039838A (ja) | 1973-07-11 | 1974-07-11 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3876991A (ja) |
| JP (1) | JPS5039838A (ja) |
| DE (1) | DE2433077A1 (ja) |
| FR (1) | FR2237272B1 (ja) |
| GB (1) | GB1456326A (ja) |
| NL (1) | NL7408203A (ja) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2442131B2 (de) * | 1974-09-03 | 1976-07-08 | Siemens AG, 1000 Berlin und 8000 München | Dynamisches ein-transistor-speicherelement |
| JPS51139220A (en) * | 1975-05-28 | 1976-12-01 | Hitachi Ltd | Sense amplifier |
| US4059826A (en) * | 1975-12-29 | 1977-11-22 | Texas Instruments Incorporated | Semiconductor memory array with field effect transistors programmable by alteration of threshold voltage |
| JPS544086A (en) * | 1977-06-10 | 1979-01-12 | Fujitsu Ltd | Memory circuit unit |
| US4450537A (en) * | 1981-08-19 | 1984-05-22 | Siemens Aktiengesellschaft | Monolithically integrated read-only memory |
| US4799192A (en) * | 1986-08-28 | 1989-01-17 | Massachusetts Institute Of Technology | Three-transistor content addressable memory |
| US5396452A (en) * | 1993-07-02 | 1995-03-07 | Wahlstrom; Sven E. | Dynamic random access memory |
| US6242772B1 (en) | 1994-12-12 | 2001-06-05 | Altera Corporation | Multi-sided capacitor in an integrated circuit |
| US6420746B1 (en) | 1998-10-29 | 2002-07-16 | International Business Machines Corporation | Three device DRAM cell with integrated capacitor and local interconnect |
| US8648403B2 (en) | 2006-04-21 | 2014-02-11 | International Business Machines Corporation | Dynamic memory cell structures |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3114177A (en) * | 1961-01-09 | 1963-12-17 | Simard Joseph Gerard | Sashless window |
| US3765000A (en) * | 1971-11-03 | 1973-10-09 | Honeywell Inf Systems | Memory storage cell with single selection line and single input/output line |
| US3774177A (en) * | 1972-10-16 | 1973-11-20 | Ncr Co | Nonvolatile random access memory cell using an alterable threshold field effect write transistor |
-
1973
- 1973-07-11 US US378052A patent/US3876991A/en not_active Expired - Lifetime
-
1974
- 1974-06-10 FR FR7420038A patent/FR2237272B1/fr not_active Expired
- 1974-06-19 NL NL7408203A patent/NL7408203A/xx not_active Application Discontinuation
- 1974-07-08 GB GB3012174A patent/GB1456326A/en not_active Expired
- 1974-07-10 DE DE2433077A patent/DE2433077A1/de not_active Withdrawn
- 1974-07-11 JP JP49078796A patent/JPS5039838A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US3876991A (en) | 1975-04-08 |
| GB1456326A (en) | 1976-11-24 |
| NL7408203A (nl) | 1975-01-14 |
| FR2237272A1 (ja) | 1975-02-07 |
| DE2433077A1 (de) | 1975-07-10 |
| FR2237272B1 (ja) | 1977-10-07 |