JPS5039083A - - Google Patents
Info
- Publication number
- JPS5039083A JPS5039083A JP49073434A JP7343474A JPS5039083A JP S5039083 A JPS5039083 A JP S5039083A JP 49073434 A JP49073434 A JP 49073434A JP 7343474 A JP7343474 A JP 7343474A JP S5039083 A JPS5039083 A JP S5039083A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/67—Complementary BJTs
- H10D84/673—Vertical complementary BJTs
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- H10W10/019—
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- H10W10/10—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/05—Etch and refill
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/115—Orientation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/969—Simultaneous formation of monocrystalline and polycrystalline regions
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
Landscapes
- Element Separation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/374,719 US3954522A (en) | 1973-06-28 | 1973-06-28 | Integrated circuit process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5039083A true JPS5039083A (ja) | 1975-04-10 |
Family
ID=23477942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49073434A Pending JPS5039083A (ja) | 1973-06-28 | 1974-06-28 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US3954522A (ja) |
| JP (1) | JPS5039083A (ja) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4146905A (en) * | 1974-06-18 | 1979-03-27 | U.S. Philips Corporation | Semiconductor device having complementary transistor structures and method of manufacturing same |
| JPS5146083A (en) * | 1974-10-18 | 1976-04-20 | Hitachi Ltd | Handotaisochino seizohoho |
| US4481707A (en) * | 1983-02-24 | 1984-11-13 | The United States Of America As Represented By The Secretary Of The Air Force | Method for the fabrication of dielectric isolated junction field effect transistor and PNP transistor |
| JPS59188935A (ja) * | 1983-04-12 | 1984-10-26 | Nec Corp | 誘電体分離型半導体装置及びその製造方法 |
| US4553318A (en) * | 1983-05-02 | 1985-11-19 | Rca Corporation | Method of making integrated PNP and NPN bipolar transistors and junction field effect transistor |
| JPS6081839A (ja) * | 1983-10-12 | 1985-05-09 | Fujitsu Ltd | 半導体装置の製造方法 |
| US4649630A (en) * | 1985-04-01 | 1987-03-17 | Motorola, Inc. | Process for dielectrically isolated semiconductor structure |
| US4925808A (en) * | 1989-03-24 | 1990-05-15 | Sprague Electric Company | Method for making IC die with dielectric isolation |
| US5145795A (en) * | 1990-06-25 | 1992-09-08 | Motorola, Inc. | Semiconductor device and method therefore |
| US5789793A (en) * | 1995-07-31 | 1998-08-04 | Kurtz; Anthony D. | Dielectrically isolated well structures |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA952628A (en) * | 1963-12-16 | 1974-08-06 | David A. Maxwell | Semiconductor structure and method |
| US3587166A (en) * | 1965-02-26 | 1971-06-28 | Texas Instruments Inc | Insulated isolation techniques in integrated circuits |
| US3454835A (en) * | 1966-10-31 | 1969-07-08 | Raytheon Co | Multiple semiconductor device |
| US3725146A (en) * | 1970-11-12 | 1973-04-03 | Molekularelektronik | Fabrication of integrated microcircuits utilizing dielectric p-n-junction isolation |
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1973
- 1973-06-28 US US05/374,719 patent/US3954522A/en not_active Expired - Lifetime
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1974
- 1974-06-28 JP JP49073434A patent/JPS5039083A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US3954522A (en) | 1976-05-04 |