JPS5039083A - - Google Patents

Info

Publication number
JPS5039083A
JPS5039083A JP49073434A JP7343474A JPS5039083A JP S5039083 A JPS5039083 A JP S5039083A JP 49073434 A JP49073434 A JP 49073434A JP 7343474 A JP7343474 A JP 7343474A JP S5039083 A JPS5039083 A JP S5039083A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP49073434A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5039083A publication Critical patent/JPS5039083A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67Complementary BJTs
    • H10D84/673Vertical complementary BJTs
    • H10W10/019
    • H10W10/10
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/05Etch and refill
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/051Etching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/085Isolated-integrated
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/115Orientation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/122Polycrystalline
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/969Simultaneous formation of monocrystalline and polycrystalline regions
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/977Thinning or removal of substrate

Landscapes

  • Element Separation (AREA)
JP49073434A 1973-06-28 1974-06-28 Pending JPS5039083A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/374,719 US3954522A (en) 1973-06-28 1973-06-28 Integrated circuit process

Publications (1)

Publication Number Publication Date
JPS5039083A true JPS5039083A (ja) 1975-04-10

Family

ID=23477942

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49073434A Pending JPS5039083A (ja) 1973-06-28 1974-06-28

Country Status (2)

Country Link
US (1) US3954522A (ja)
JP (1) JPS5039083A (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same
JPS5146083A (en) * 1974-10-18 1976-04-20 Hitachi Ltd Handotaisochino seizohoho
US4481707A (en) * 1983-02-24 1984-11-13 The United States Of America As Represented By The Secretary Of The Air Force Method for the fabrication of dielectric isolated junction field effect transistor and PNP transistor
JPS59188935A (ja) * 1983-04-12 1984-10-26 Nec Corp 誘電体分離型半導体装置及びその製造方法
US4553318A (en) * 1983-05-02 1985-11-19 Rca Corporation Method of making integrated PNP and NPN bipolar transistors and junction field effect transistor
JPS6081839A (ja) * 1983-10-12 1985-05-09 Fujitsu Ltd 半導体装置の製造方法
US4649630A (en) * 1985-04-01 1987-03-17 Motorola, Inc. Process for dielectrically isolated semiconductor structure
US4925808A (en) * 1989-03-24 1990-05-15 Sprague Electric Company Method for making IC die with dielectric isolation
US5145795A (en) * 1990-06-25 1992-09-08 Motorola, Inc. Semiconductor device and method therefore
US5789793A (en) * 1995-07-31 1998-08-04 Kurtz; Anthony D. Dielectrically isolated well structures

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA952628A (en) * 1963-12-16 1974-08-06 David A. Maxwell Semiconductor structure and method
US3587166A (en) * 1965-02-26 1971-06-28 Texas Instruments Inc Insulated isolation techniques in integrated circuits
US3454835A (en) * 1966-10-31 1969-07-08 Raytheon Co Multiple semiconductor device
US3725146A (en) * 1970-11-12 1973-04-03 Molekularelektronik Fabrication of integrated microcircuits utilizing dielectric p-n-junction isolation

Also Published As

Publication number Publication date
US3954522A (en) 1976-05-04

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