JPS5037398A - - Google Patents

Info

Publication number
JPS5037398A
JPS5037398A JP49067258A JP6725874A JPS5037398A JP S5037398 A JPS5037398 A JP S5037398A JP 49067258 A JP49067258 A JP 49067258A JP 6725874 A JP6725874 A JP 6725874A JP S5037398 A JPS5037398 A JP S5037398A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49067258A
Other versions
JPS5441310B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5037398A publication Critical patent/JPS5037398A/ja
Publication of JPS5441310B2 publication Critical patent/JPS5441310B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49103—Strain gauge making

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
JP6725874A 1973-06-21 1974-06-14 Expired JPS5441310B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00372453A US3858150A (en) 1973-06-21 1973-06-21 Polycrystalline silicon pressure sensor

Publications (2)

Publication Number Publication Date
JPS5037398A true JPS5037398A (ja) 1975-04-08
JPS5441310B2 JPS5441310B2 (ja) 1979-12-07

Family

ID=23468180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6725874A Expired JPS5441310B2 (ja) 1973-06-21 1974-06-14

Country Status (4)

Country Link
US (1) US3858150A (ja)
JP (1) JPS5441310B2 (ja)
DE (1) DE2429894B2 (ja)
IT (1) IT1013243B (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6310575A (ja) * 1986-07-01 1988-01-18 Nippon Denso Co Ltd 半導体歪検出器
JPS6315422A (ja) * 1986-07-08 1988-01-22 Komatsu Ltd 半導体装置の製造方法
JPS6376484A (ja) * 1986-09-19 1988-04-06 Komatsu Ltd 半導体圧力センサの製造方法

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4003127A (en) * 1974-11-25 1977-01-18 General Motors Corporation Polycrystalline silicon pressure transducer
US4023562A (en) * 1975-09-02 1977-05-17 Case Western Reserve University Miniature pressure transducer for medical use and assembly method
US4050049A (en) * 1976-02-09 1977-09-20 Signetics Corporation Solid state force transducer, support and method of making same
US4204185A (en) * 1977-10-13 1980-05-20 Kulite Semiconductor Products, Inc. Integral transducer assemblies employing thin homogeneous diaphragms
US4129042A (en) * 1977-11-18 1978-12-12 Signetics Corporation Semiconductor transducer packaged assembly
US4208782A (en) * 1977-12-12 1980-06-24 Kulite Semiconductor Products, Inc. Methods of fabricating transducers employing flat bondable surfaces with buried contact areas
US4202217A (en) * 1977-12-12 1980-05-13 Kulite Semiconductor Products, Inc. Semiconductor transducers employing flat bondable surfaces with buried contact areas
US4188258A (en) * 1978-05-18 1980-02-12 Gulton Industries, Inc. Process for fabricating strain gage transducer
US4320664A (en) * 1980-02-25 1982-03-23 Texas Instruments Incorporated Thermally compensated silicon pressure sensor
US4332000A (en) * 1980-10-03 1982-05-25 International Business Machines Corporation Capacitive pressure transducer
DE3041756A1 (de) * 1980-11-05 1982-06-09 Siemens AG, 1000 Berlin und 8000 München Drucksensor
US4318936A (en) * 1981-01-23 1982-03-09 General Motors Corporation Method of making strain sensor in fragile web
US4400869A (en) * 1981-02-12 1983-08-30 Becton Dickinson And Company Process for producing high temperature pressure transducers and semiconductors
JPS59117271A (ja) * 1982-12-24 1984-07-06 Hitachi Ltd 圧力感知素子を有する半導体装置とその製造法
US4592238A (en) * 1985-04-15 1986-06-03 Gould Inc. Laser-recrystallized diaphragm pressure sensor and method of making
US4651120A (en) * 1985-09-09 1987-03-17 Honeywell Inc. Piezoresistive pressure sensor
US4766666A (en) * 1985-09-30 1988-08-30 Kabushiki Kaisha Toyota Chuo Kenkyusho Semiconductor pressure sensor and method of manufacturing the same
JPH0711461B2 (ja) * 1986-06-13 1995-02-08 株式会社日本自動車部品総合研究所 圧力検出器
US4975390A (en) * 1986-12-18 1990-12-04 Nippondenso Co. Ltd. Method of fabricating a semiconductor pressure sensor
US4721938A (en) * 1986-12-22 1988-01-26 Delco Electronics Corporation Process for forming a silicon pressure transducer
US4756193A (en) * 1987-09-11 1988-07-12 Delco Electronics Corporation Pressure sensor
US5167158A (en) * 1987-10-07 1992-12-01 Kabushiki Kaisha Komatsu Seisakusho Semiconductor film pressure sensor and method of manufacturing same
US4850227A (en) * 1987-12-22 1989-07-25 Delco Electronics Corporation Pressure sensor and method of fabrication thereof
US4870745A (en) * 1987-12-23 1989-10-03 Siemens-Bendix Automotive Electronics L.P. Methods of making silicon-based sensors
US4885621A (en) * 1988-05-02 1989-12-05 Delco Electronics Corporation Monolithic pressure sensitive integrated circuit
US4977101A (en) * 1988-05-02 1990-12-11 Delco Electronics Corporation Monolithic pressure sensitive integrated circuit
US5320705A (en) * 1988-06-08 1994-06-14 Nippondenso Co., Ltd. Method of manufacturing a semiconductor pressure sensor
USRE34893E (en) * 1988-06-08 1995-04-04 Nippondenso Co., Ltd. Semiconductor pressure sensor and method of manufacturing same
US5095349A (en) * 1988-06-08 1992-03-10 Nippondenso Co., Ltd. Semiconductor pressure sensor and method of manufacturing same
JP2656566B2 (ja) * 1988-08-31 1997-09-24 株式会社日立製作所 半導体圧力変換装置
EP0384934A1 (de) * 1989-03-02 1990-09-05 Siemens Aktiengesellschaft Drucksensor
JP2558549B2 (ja) * 1990-10-11 1996-11-27 東横化学株式会社 半導体圧力センサ及びその製造方法
US5589810A (en) * 1991-03-28 1996-12-31 The Foxboro Company Semiconductor pressure sensor and related methodology with polysilicon diaphragm and single-crystal gage elements
FR2685080B1 (fr) * 1991-12-17 1995-09-01 Thomson Csf Capteur mecanique comprenant un film de polymere.
US5759870A (en) * 1995-08-28 1998-06-02 Bei Electronics, Inc. Method of making a surface micro-machined silicon pressure sensor
US6622558B2 (en) 2000-11-30 2003-09-23 Orbital Research Inc. Method and sensor for detecting strain using shape memory alloys
DE10123627B4 (de) * 2001-05-15 2004-11-04 Robert Bosch Gmbh Sensorvorrichtung zum Erfassen einer mechanischen Deformation eines Bauelementes im Kraftfahrzeugbereich
JP4452526B2 (ja) * 2004-03-03 2010-04-21 長野計器株式会社 歪検出素子及び圧力センサ
US8415203B2 (en) * 2008-09-29 2013-04-09 Freescale Semiconductor, Inc. Method of forming a semiconductor package including two devices
US7820485B2 (en) * 2008-09-29 2010-10-26 Freescale Semiconductor, Inc. Method of forming a package with exposed component surfaces
CN105092104B (zh) * 2014-05-14 2018-09-21 中芯国际集成电路制造(上海)有限公司 一种压力传感器及其制备方法、电子装置
JP6714439B2 (ja) * 2016-06-09 2020-06-24 長野計器株式会社 歪検出器及びその製造方法
CN107291299B (zh) * 2017-06-30 2020-08-18 厦门天马微电子有限公司 一种阵列基板、触控显示面板及其显示装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6310575A (ja) * 1986-07-01 1988-01-18 Nippon Denso Co Ltd 半導体歪検出器
JPS6315422A (ja) * 1986-07-08 1988-01-22 Komatsu Ltd 半導体装置の製造方法
JPS6376484A (ja) * 1986-09-19 1988-04-06 Komatsu Ltd 半導体圧力センサの製造方法

Also Published As

Publication number Publication date
DE2429894A1 (de) 1975-01-23
JPS5441310B2 (ja) 1979-12-07
DE2429894B2 (de) 1977-02-24
IT1013243B (it) 1977-03-30
US3858150A (en) 1974-12-31

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