JPS5033780A - - Google Patents

Info

Publication number
JPS5033780A
JPS5033780A JP49065502A JP6550274A JPS5033780A JP S5033780 A JPS5033780 A JP S5033780A JP 49065502 A JP49065502 A JP 49065502A JP 6550274 A JP6550274 A JP 6550274A JP S5033780 A JPS5033780 A JP S5033780A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49065502A
Other versions
JPS5243070B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5033780A publication Critical patent/JPS5033780A/ja
Publication of JPS5243070B2 publication Critical patent/JPS5243070B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/765Making of isolation regions between components by field effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP49065502A 1973-06-08 1974-06-07 Expired JPS5243070B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US36817773A 1973-06-08 1973-06-08

Publications (2)

Publication Number Publication Date
JPS5033780A true JPS5033780A (ja) 1975-04-01
JPS5243070B2 JPS5243070B2 (ja) 1977-10-28

Family

ID=23450164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49065502A Expired JPS5243070B2 (ja) 1973-06-08 1974-06-07

Country Status (8)

Country Link
JP (1) JPS5243070B2 (ja)
BE (1) BE816061A (ja)
DE (1) DE2425942A1 (ja)
FR (1) FR2232836B1 (ja)
GB (1) GB1429448A (ja)
IT (1) IT1012166B (ja)
NL (1) NL7407325A (ja)
SE (1) SE7407381L (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57180145A (en) * 1981-04-30 1982-11-06 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor integrated circuit device
JPS6079388A (ja) * 1983-10-07 1985-05-07 カシオ計算機株式会社 フイルム型液晶表示セルの実装方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1039154B (it) * 1974-08-12 1979-12-10 Ibm Miglioramento a processi di fabricazione di dispositivi impieganti semiconduttori particolarmente strutture mos
US4048350A (en) * 1975-09-19 1977-09-13 International Business Machines Corporation Semiconductor device having reduced surface leakage and methods of manufacture
DE3044132A1 (de) * 1980-11-24 1982-07-15 Siemens AG, 1000 Berlin und 8000 München Dynamische halbleiter-speicherzelle mit wahlfreiem zugriff und verfahren zu ihrer herstellung
US4799100A (en) * 1987-02-17 1989-01-17 Siliconix Incorporated Method and apparatus for increasing breakdown of a planar junction
JPH0697277A (ja) * 1992-09-11 1994-04-08 Texas Instr Japan Ltd 半導体装置及びその素子分離方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3328210A (en) * 1964-10-26 1967-06-27 North American Aviation Inc Method of treating semiconductor device by ionic bombardment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57180145A (en) * 1981-04-30 1982-11-06 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor integrated circuit device
JPS6079388A (ja) * 1983-10-07 1985-05-07 カシオ計算機株式会社 フイルム型液晶表示セルの実装方法

Also Published As

Publication number Publication date
NL7407325A (ja) 1974-12-10
FR2232836B1 (ja) 1978-02-17
DE2425942A1 (de) 1975-01-02
SE7407381L (ja) 1974-12-09
FR2232836A1 (ja) 1975-01-03
BE816061A (fr) 1974-09-30
IT1012166B (it) 1977-03-10
JPS5243070B2 (ja) 1977-10-28
GB1429448A (en) 1976-03-24

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