JPS503275A - - Google Patents
Info
- Publication number
- JPS503275A JPS503275A JP49030671A JP3067174A JPS503275A JP S503275 A JPS503275 A JP S503275A JP 49030671 A JP49030671 A JP 49030671A JP 3067174 A JP3067174 A JP 3067174A JP S503275 A JPS503275 A JP S503275A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76833—Buried channel CCD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1091—Substrate region of field-effect devices of charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76833—Buried channel CCD
- H01L29/76858—Four-Phase CCD
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Networks Using Active Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NLAANVRAGE7303778,A NL181766C (nl) | 1973-03-19 | 1973-03-19 | Ladingsgekoppelde halfgeleiderschakeling, waarbij pakketten meerderheidsladingsdragers door een halfgeleiderlaag evenwijdig aan de halfgeleiderlaag kunnen worden overgedragen. |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS503275A true JPS503275A (ja) | 1975-01-14 |
JPS5244708B2 JPS5244708B2 (ja) | 1977-11-10 |
Family
ID=19818460
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP49030671A Expired JPS5244708B2 (ja) | 1973-03-19 | 1974-03-19 |
Country Status (10)
Country | Link |
---|---|
US (1) | US4012759A (ja) |
JP (1) | JPS5244708B2 (ja) |
CA (1) | CA1102917A (ja) |
CH (1) | CH570704A5 (ja) |
DE (1) | DE2412699C2 (ja) |
ES (1) | ES424350A1 (ja) |
FR (1) | FR2222756B1 (ja) |
GB (2) | GB1470192A (ja) |
IT (1) | IT1005664B (ja) |
NL (1) | NL181766C (ja) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4077112A (en) * | 1974-09-24 | 1978-03-07 | U.S. Philips Corporation | Method of manufacturing charge transfer device |
NL7413207A (nl) * | 1974-10-08 | 1976-04-12 | Philips Nv | Halfgeleiderinrichting. |
NL180157C (nl) * | 1975-06-09 | 1987-01-02 | Philips Nv | Halfgeleider beeldopneeminrichting. |
GB1548877A (en) * | 1975-06-26 | 1979-07-18 | Mullard Ltd | Semiconductor devices |
NL7510311A (nl) * | 1975-09-02 | 1977-03-04 | Philips Nv | Ladingsoverdrachtinrichting. |
GB1551935A (en) * | 1976-08-19 | 1979-09-05 | Philips Nv | Imaging devices |
GB1559312A (en) * | 1976-08-26 | 1980-01-16 | Philips Nv | Photosensitive device arrangements and systems and photosensitive elements therefor |
GB1559860A (en) * | 1976-12-14 | 1980-01-30 | Rca Corp | Surface-channel ccd image sensor with buried-channel output register |
US4364076A (en) * | 1977-08-26 | 1982-12-14 | Texas Instruments Incorporated | Co-planar well-type charge coupled device with enhanced storage capacity and reduced leakage current |
NL7709916A (nl) * | 1977-09-09 | 1979-03-13 | Philips Nv | Ladingsgekoppelde inrichting. |
DE2743245A1 (de) * | 1977-09-26 | 1979-04-05 | Siemens Ag | Ladungsgekoppeltes bauelement |
US4151539A (en) * | 1977-12-23 | 1979-04-24 | The United States Of America As Represented By The Secretary Of The Air Force | Junction-storage JFET bucket-brigade structure |
US4994875A (en) * | 1978-05-16 | 1991-02-19 | Texas Instruments Incorporated | Virtual phase charge transfer device |
US4229752A (en) * | 1978-05-16 | 1980-10-21 | Texas Instruments Incorporated | Virtual phase charge transfer device |
JPS5515275A (en) * | 1978-07-19 | 1980-02-02 | Semiconductor Res Found | Charge transfer device |
US4285000A (en) * | 1979-03-12 | 1981-08-18 | Rockwell International Corporation | Buried channel charge coupled device with semi-insulating substrate |
EP0025658A3 (en) * | 1979-09-18 | 1983-04-20 | The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and | Improvements in or relating to charge storage and transfer devices and their fabrication |
JPS577964A (en) * | 1980-06-17 | 1982-01-16 | Matsushita Electric Ind Co Ltd | Charge transfer element |
JPS57144418A (en) * | 1981-03-02 | 1982-09-07 | Aichi Tokei Denki Co Ltd | Pulse signal transmitter |
US4667213A (en) * | 1984-09-24 | 1987-05-19 | Rca Corporation | Charge-coupled device channel structure |
NL8600786A (nl) * | 1986-03-27 | 1987-10-16 | Philips Nv | Ladingsgekoppelde inrichting. |
US4967250A (en) * | 1987-05-05 | 1990-10-30 | Hughes Aircraft Company | Charge-coupled device with focused ion beam fabrication |
DE3715675A1 (de) * | 1987-05-11 | 1988-12-01 | Messerschmitt Boelkow Blohm | Halbleiterelement |
US4900688A (en) * | 1987-06-25 | 1990-02-13 | The United States Of America As Represented By The Secretary Of The Air Force | Pseudo uniphase charge coupled device fabrication by self-aligned virtual barrier and virtual gate formation |
US4992841A (en) * | 1987-06-25 | 1991-02-12 | The United States Of America As Represented By The Secretary Of The Air Force | Pseudo uniphase charge coupled device |
US4862235A (en) * | 1988-06-30 | 1989-08-29 | Tektronix, Inc. | Electrode structure for a corner turn in a series-parallel-series charge coupled device |
FR2674845A1 (fr) * | 1991-04-05 | 1992-10-09 | Champagne Sa Cristalleries Roy | Procede pour la fabrication en verrerie-cristallerie d'un recipient par la technique "aspire-souffle", dispositif pour sa mise en óoeuvre, produits ainsi obtenus. |
AU1995092A (en) * | 1991-05-10 | 1992-12-30 | Q-Dot. Inc. | High-speed peristaltic ccd imager with gaas fet output |
US9905608B1 (en) * | 2017-01-11 | 2018-02-27 | Semiconductor Components Industries, Llc | EMCCD image sensor with stable charge multiplication gain |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE383573B (sv) * | 1971-04-06 | 1976-03-15 | Western Electric Co | Laddningskopplad anordning |
US3796932A (en) * | 1971-06-28 | 1974-03-12 | Bell Telephone Labor Inc | Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel |
US3789267A (en) * | 1971-06-28 | 1974-01-29 | Bell Telephone Labor Inc | Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel |
US3767983A (en) * | 1972-08-23 | 1973-10-23 | Bell Telephone Labor Inc | Charge transfer device with improved transfer efficiency |
US3784847A (en) * | 1972-10-10 | 1974-01-08 | Gen Electric | Dielectric strip isolation for jfet or mesfet depletion-mode bucket-brigade circuit |
US3792322A (en) * | 1973-04-19 | 1974-02-12 | W Boyle | Buried channel charge coupled devices |
US3852799A (en) * | 1973-04-27 | 1974-12-03 | Bell Telephone Labor Inc | Buried channel charge coupled apparatus |
-
1973
- 1973-03-19 NL NLAANVRAGE7303778,A patent/NL181766C/xx not_active IP Right Cessation
-
1974
- 1974-03-12 CA CA194,725A patent/CA1102917A/en not_active Expired
- 1974-03-14 IT IT12579/74A patent/IT1005664B/it active
- 1974-03-15 CH CH367274A patent/CH570704A5/xx not_active IP Right Cessation
- 1974-03-16 DE DE2412699A patent/DE2412699C2/de not_active Expired
- 1974-03-16 ES ES424350A patent/ES424350A1/es not_active Expired
- 1974-03-18 GB GB4719476A patent/GB1470192A/en not_active Expired
- 1974-03-18 GB GB1197474A patent/GB1470191A/en not_active Expired
- 1974-03-19 JP JP49030671A patent/JPS5244708B2/ja not_active Expired
- 1974-03-19 FR FR7409174A patent/FR2222756B1/fr not_active Expired
-
1975
- 1975-11-10 US US05/630,538 patent/US4012759A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2222756A1 (ja) | 1974-10-18 |
GB1470191A (en) | 1977-04-14 |
DE2412699A1 (de) | 1974-10-10 |
ES424350A1 (es) | 1976-10-16 |
NL7303778A (ja) | 1974-09-23 |
GB1470192A (ja) | 1977-04-14 |
NL181766B (nl) | 1987-05-18 |
FR2222756B1 (ja) | 1977-10-07 |
NL181766C (nl) | 1987-10-16 |
CH570704A5 (ja) | 1975-12-15 |
IT1005664B (it) | 1976-09-30 |
CA1102917A (en) | 1981-06-09 |
JPS5244708B2 (ja) | 1977-11-10 |
AU6678074A (en) | 1975-09-18 |
US4012759A (en) | 1977-03-15 |
DE2412699C2 (de) | 1982-05-27 |