JPS5027483A - - Google Patents
Info
- Publication number
- JPS5027483A JPS5027483A JP7772473A JP7772473A JPS5027483A JP S5027483 A JPS5027483 A JP S5027483A JP 7772473 A JP7772473 A JP 7772473A JP 7772473 A JP7772473 A JP 7772473A JP S5027483 A JPS5027483 A JP S5027483A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7772473A JPS5611227B2 (ja) | 1973-07-10 | 1973-07-10 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7772473A JPS5611227B2 (ja) | 1973-07-10 | 1973-07-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5027483A true JPS5027483A (ja) | 1975-03-20 |
| JPS5611227B2 JPS5611227B2 (ja) | 1981-03-12 |
Family
ID=13641831
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7772473A Expired JPS5611227B2 (ja) | 1973-07-10 | 1973-07-10 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5611227B2 (ja) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51113472A (en) * | 1975-03-31 | 1976-10-06 | Fujitsu Ltd | Semiconductor device |
| JPS51114074A (en) * | 1975-03-31 | 1976-10-07 | Sony Corp | Insulation gate type field effect transistor |
| JPS51147279A (en) * | 1975-06-13 | 1976-12-17 | Nec Corp | Field effect transistor with insulated gate |
| JPS52113685A (en) * | 1976-03-17 | 1977-09-22 | Siemens Ag | Fet transistor having very short channel length |
| JPS5345981A (en) * | 1976-10-06 | 1978-04-25 | Mitsubishi Electric Corp | Mos semiconductor device and its manufacture |
| JPS59115563A (ja) * | 1982-12-23 | 1984-07-04 | Seiko Instr & Electronics Ltd | 半導体装置 |
| JPS6377157A (ja) * | 1986-09-19 | 1988-04-07 | Fujitsu Ltd | Ｍｉｓ電界効果トランジスタおよびその製造方法 |
-
1973
- 1973-07-10 JP JP7772473A patent/JPS5611227B2/ja not_active Expired
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51113472A (en) * | 1975-03-31 | 1976-10-06 | Fujitsu Ltd | Semiconductor device |
| JPS51114074A (en) * | 1975-03-31 | 1976-10-07 | Sony Corp | Insulation gate type field effect transistor |
| JPS5653868B2 (ja) * | 1975-03-31 | 1981-12-22 | ||
| JPS51147279A (en) * | 1975-06-13 | 1976-12-17 | Nec Corp | Field effect transistor with insulated gate |
| JPS52113685A (en) * | 1976-03-17 | 1977-09-22 | Siemens Ag | Fet transistor having very short channel length |
| JPS628952B2 (ja) * | 1976-03-17 | 1987-02-25 | Siemens Ag | |
| JPS5345981A (en) * | 1976-10-06 | 1978-04-25 | Mitsubishi Electric Corp | Mos semiconductor device and its manufacture |
| JPS59115563A (ja) * | 1982-12-23 | 1984-07-04 | Seiko Instr & Electronics Ltd | 半導体装置 |
| JPS6377157A (ja) * | 1986-09-19 | 1988-04-07 | Fujitsu Ltd | Ｍｉｓ電界効果トランジスタおよびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5611227B2 (ja) | 1981-03-12 |