JPS5024081A - - Google Patents

Info

Publication number
JPS5024081A
JPS5024081A JP49054628A JP5462874A JPS5024081A JP S5024081 A JPS5024081 A JP S5024081A JP 49054628 A JP49054628 A JP 49054628A JP 5462874 A JP5462874 A JP 5462874A JP S5024081 A JPS5024081 A JP S5024081A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49054628A
Other languages
Japanese (ja)
Other versions
JPS5323067B2 (en:Method
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5024081A publication Critical patent/JPS5024081A/ja
Publication of JPS5323067B2 publication Critical patent/JPS5323067B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/01Manufacture or treatment
    • H10D30/021Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10P95/064
    • H10W20/42
    • H10W20/48
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/913Active solid-state devices, e.g. transistors, solid-state diodes with means to absorb or localize unwanted impurities or defects from semiconductors, e.g. heavy metal gettering
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/91Controlling charging state at semiconductor-insulator interface

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP5462874A 1973-06-29 1974-05-17 Expired JPS5323067B2 (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US375295A US3887994A (en) 1973-06-29 1973-06-29 Method of manufacturing a semiconductor device

Publications (2)

Publication Number Publication Date
JPS5024081A true JPS5024081A (en:Method) 1975-03-14
JPS5323067B2 JPS5323067B2 (en:Method) 1978-07-12

Family

ID=23480293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5462874A Expired JPS5323067B2 (en:Method) 1973-06-29 1974-05-17

Country Status (10)

Country Link
US (1) US3887994A (en:Method)
JP (1) JPS5323067B2 (en:Method)
AU (1) AU474451B2 (en:Method)
CA (1) CA1032658A (en:Method)
CH (1) CH568655A5 (en:Method)
DE (1) DE2425185C3 (en:Method)
FR (1) FR2235485B1 (en:Method)
GB (1) GB1466679A (en:Method)
IT (1) IT1010166B (en:Method)
NL (1) NL7408711A (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56114159A (en) * 1980-02-15 1981-09-08 Pioneer Electronic Corp Disc insertion detecting mechanism of autoloading player

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4230504B1 (en) * 1978-04-27 1997-03-04 Texas Instruments Inc Method of making implant programmable N-channel rom
US4290184A (en) * 1978-03-20 1981-09-22 Texas Instruments Incorporated Method of making post-metal programmable MOS read only memory
US4268950A (en) * 1978-06-05 1981-05-26 Texas Instruments Incorporated Post-metal ion implant programmable MOS read only memory
JPS55140986U (en:Method) * 1979-03-28 1980-10-08
DE3217026A1 (de) * 1981-05-06 1982-12-30 Mitsubishi Denki K.K., Tokyo Halbleitervorrichtung
US4439261A (en) * 1983-08-26 1984-03-27 International Business Machines Corporation Composite pallet
US4584026A (en) * 1984-07-25 1986-04-22 Rca Corporation Ion-implantation of phosphorus, arsenic or boron by pre-amorphizing with fluorine ions
GB2165692B (en) * 1984-08-25 1989-05-04 Ricoh Kk Manufacture of interconnection patterns
GB8729652D0 (en) * 1987-12-19 1988-02-03 Plessey Co Plc Semi-conductive devices fabricated on soi wafers
JPH0750697B2 (ja) * 1989-02-20 1995-05-31 株式会社東芝 半導体装置の製造方法
US5468974A (en) * 1994-05-26 1995-11-21 Lsi Logic Corporation Control and modification of dopant distribution and activation in polysilicon
US5432128A (en) * 1994-05-27 1995-07-11 Texas Instruments Incorporated Reliability enhancement of aluminum interconnects by reacting aluminum leads with a strengthening gas
US6093936A (en) * 1995-06-07 2000-07-25 Lsi Logic Corporation Integrated circuit with isolation of field oxidation by noble gas implantation
JPH09260374A (ja) * 1995-09-27 1997-10-03 Texas Instr Inc <Ti> 集積回路の相互接続および方法
US6391754B1 (en) 1996-09-27 2002-05-21 Texas Instruments Incorporated Method of making an integrated circuit interconnect
US6613671B1 (en) 2000-03-03 2003-09-02 Micron Technology, Inc. Conductive connection forming methods, oxidation reducing methods, and integrated circuits formed thereby
DE102015120848B4 (de) * 2015-12-01 2017-10-26 Infineon Technologies Ag Herstellen einer Kontaktschicht auf einem Halbleiterkörper

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4836981A (en:Method) * 1971-09-13 1973-05-31

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3515956A (en) * 1967-10-16 1970-06-02 Ion Physics Corp High-voltage semiconductor device having a guard ring containing substitutionally active ions in interstitial positions
US3600797A (en) * 1967-12-26 1971-08-24 Hughes Aircraft Co Method of making ohmic contacts to semiconductor bodies by indirect ion implantation
JPS4837232B1 (en:Method) * 1968-12-04 1973-11-09
BE759057A (en:Method) * 1969-11-19 1971-05-17 Philips Nv
US3682729A (en) * 1969-12-30 1972-08-08 Ibm Method of changing the physical properties of a metallic film by ion beam formation and devices produced thereby
US3756861A (en) * 1972-03-13 1973-09-04 Bell Telephone Labor Inc Bipolar transistors and method of manufacture

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4836981A (en:Method) * 1971-09-13 1973-05-31

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56114159A (en) * 1980-02-15 1981-09-08 Pioneer Electronic Corp Disc insertion detecting mechanism of autoloading player

Also Published As

Publication number Publication date
AU474451B2 (en) 1976-07-22
JPS5323067B2 (en:Method) 1978-07-12
CA1032658A (en) 1978-06-06
NL7408711A (en:Method) 1974-12-31
GB1466679A (en) 1977-03-09
AU6856874A (en) 1975-11-06
FR2235485A1 (en:Method) 1975-01-24
DE2425185B2 (de) 1977-11-10
IT1010166B (it) 1977-01-10
US3887994A (en) 1975-06-10
DE2425185C3 (de) 1978-07-06
DE2425185A1 (de) 1975-01-16
CH568655A5 (en:Method) 1975-10-31
FR2235485B1 (en:Method) 1976-12-24

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