JPS5023789A - - Google Patents

Info

Publication number
JPS5023789A
JPS5023789A JP48074234A JP7423473A JPS5023789A JP S5023789 A JPS5023789 A JP S5023789A JP 48074234 A JP48074234 A JP 48074234A JP 7423473 A JP7423473 A JP 7423473A JP S5023789 A JPS5023789 A JP S5023789A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48074234A
Other versions
JPS5818790B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP48074234A priority Critical patent/JPS5818790B2/ja
Priority to DE2423486A priority patent/DE2423486C3/de
Priority to CA201,452A priority patent/CA1024638A/en
Priority to GB2449474A priority patent/GB1445207A/en
Publication of JPS5023789A publication Critical patent/JPS5023789A/ja
Publication of JPS5818790B2 publication Critical patent/JPS5818790B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP48074234A 1973-06-30 1973-06-30 二重ヘテロ接合レ−ザ Expired JPS5818790B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP48074234A JPS5818790B2 (ja) 1973-06-30 1973-06-30 二重ヘテロ接合レ−ザ
DE2423486A DE2423486C3 (de) 1973-06-30 1974-05-15 GaAs-AlGaAs-Doppelheterostrokturlaser
CA201,452A CA1024638A (en) 1973-06-30 1974-06-03 Double heterostructure laser
GB2449474A GB1445207A (en) 1973-06-30 1974-06-03 Double heterostructure laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48074234A JPS5818790B2 (ja) 1973-06-30 1973-06-30 二重ヘテロ接合レ−ザ

Publications (2)

Publication Number Publication Date
JPS5023789A true JPS5023789A (ja) 1975-03-14
JPS5818790B2 JPS5818790B2 (ja) 1983-04-14

Family

ID=13541261

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48074234A Expired JPS5818790B2 (ja) 1973-06-30 1973-06-30 二重ヘテロ接合レ−ザ

Country Status (4)

Country Link
JP (1) JPS5818790B2 (ja)
CA (1) CA1024638A (ja)
DE (1) DE2423486C3 (ja)
GB (1) GB1445207A (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI854000L (fi) * 1985-10-25 1987-04-16 Vsesojuzny Nauchno-Issledovatelsky Instrumentalny Institut Skaerverktyg med en slitbestaendig belaeggning.

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS=1971 *
IBM TECHNICAL DISCLOSURE BULLETIN#V15#N6=1972 *
IBM.TECHNICAL DESCLOSURE BULLETIN=1998 *

Also Published As

Publication number Publication date
CA1024638A (en) 1978-01-17
DE2423486A1 (de) 1975-01-23
GB1445207A (en) 1976-08-04
DE2423486C3 (de) 1980-12-18
DE2423486B2 (de) 1980-04-17
JPS5818790B2 (ja) 1983-04-14

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