JPS50159682A - - Google Patents

Info

Publication number
JPS50159682A
JPS50159682A JP50041918A JP4191875A JPS50159682A JP S50159682 A JPS50159682 A JP S50159682A JP 50041918 A JP50041918 A JP 50041918A JP 4191875 A JP4191875 A JP 4191875A JP S50159682 A JPS50159682 A JP S50159682A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50041918A
Other versions
JPS5826184B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS50159682A publication Critical patent/JPS50159682A/ja
Publication of JPS5826184B2 publication Critical patent/JPS5826184B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP50041918A 1974-05-20 1975-04-08 ゼツエンゲ−トデンカイコウカトランジスタノ セイゾウホウホウ Expired JPS5826184B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US471401A US3899373A (en) 1974-05-20 1974-05-20 Method for forming a field effect device

Publications (2)

Publication Number Publication Date
JPS50159682A true JPS50159682A (ja) 1975-12-24
JPS5826184B2 JPS5826184B2 (ja) 1983-06-01

Family

ID=23871485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50041918A Expired JPS5826184B2 (ja) 1974-05-20 1975-04-08 ゼツエンゲ−トデンカイコウカトランジスタノ セイゾウホウホウ

Country Status (4)

Country Link
US (1) US3899373A (ja)
JP (1) JPS5826184B2 (ja)
FR (1) FR2272485B1 (ja)
GB (1) GB1453270A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5552265A (en) * 1978-10-11 1980-04-16 Seiko Epson Corp Manufacturing of metal oxide semiconductor integrated circuit

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1089298B (it) * 1977-01-17 1985-06-18 Mostek Corp Procedimento per fabbricare un dispositivo semiconduttore
JPS53124084A (en) * 1977-04-06 1978-10-30 Hitachi Ltd Semiconductor memory device containing floating type poly silicon layer and its manufacture
US4128439A (en) * 1977-08-01 1978-12-05 International Business Machines Corporation Method for forming self-aligned field effect device by ion implantation and outdiffusion
US4277881A (en) * 1978-05-26 1981-07-14 Rockwell International Corporation Process for fabrication of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines
US4170500A (en) * 1979-01-15 1979-10-09 Fairchild Camera And Instrument Corporation Process for forming field dielectric regions in semiconductor structures without encroaching on device regions
DE2902665A1 (de) * 1979-01-24 1980-08-07 Siemens Ag Verfahren zum herstellen von integrierten mos-schaltungen in silizium-gate- technologie
US4299024A (en) * 1980-02-25 1981-11-10 Harris Corporation Fabrication of complementary bipolar transistors and CMOS devices with poly gates
US4628589A (en) * 1984-09-28 1986-12-16 Texas Instruments Incorporated Method for fabricating stacked CMOS structures
KR920004366B1 (ko) * 1989-09-08 1992-06-04 현대전자산업 주식회사 반도체 장치의 자기 정렬 콘택 제조방법
JPH03286536A (ja) * 1990-04-03 1991-12-17 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5629531A (en) * 1992-06-05 1997-05-13 Cree Research, Inc. Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures
US6255200B1 (en) 1999-05-17 2001-07-03 International Business Machines Corporation Polysilicon structure and process for improving CMOS device performance
US7179691B1 (en) * 2002-07-29 2007-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Method for four direction low capacitance ESD protection

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4870486A (ja) * 1971-12-23 1973-09-25

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3479237A (en) * 1966-04-08 1969-11-18 Bell Telephone Labor Inc Etch masks on semiconductor surfaces
US3544399A (en) * 1966-10-26 1970-12-01 Hughes Aircraft Co Insulated gate field-effect transistor (igfet) with semiconductor gate electrode
US3660735A (en) * 1969-09-10 1972-05-02 Sprague Electric Co Complementary metal insulator silicon transistor pairs
US3699646A (en) * 1970-12-28 1972-10-24 Intel Corp Integrated circuit structure and method for making integrated circuit structure
US3771218A (en) * 1972-07-13 1973-11-13 Ibm Process for fabricating passivated transistors

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4870486A (ja) * 1971-12-23 1973-09-25

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5552265A (en) * 1978-10-11 1980-04-16 Seiko Epson Corp Manufacturing of metal oxide semiconductor integrated circuit
JPS6237817B2 (ja) * 1978-10-11 1987-08-14 Seikoo Epuson Kk

Also Published As

Publication number Publication date
FR2272485A1 (ja) 1975-12-19
GB1453270A (en) 1976-10-20
US3899373A (en) 1975-08-12
JPS5826184B2 (ja) 1983-06-01
FR2272485B1 (ja) 1977-04-15

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