JPS50140064A - - Google Patents

Info

Publication number
JPS50140064A
JPS50140064A JP50031250A JP3125075A JPS50140064A JP S50140064 A JPS50140064 A JP S50140064A JP 50031250 A JP50031250 A JP 50031250A JP 3125075 A JP3125075 A JP 3125075A JP S50140064 A JPS50140064 A JP S50140064A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50031250A
Other languages
Japanese (ja)
Other versions
JPS5838933B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS50140064A publication Critical patent/JPS50140064A/ja
Publication of JPS5838933B2 publication Critical patent/JPS5838933B2/ja
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers
    • G03F7/325Non-aqueous compositions
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143Electron beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Electron Beam Exposure (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP50031250A 1974-04-22 1975-03-17 ハンドウタイデバイスノ セイゾウホウホウ Expired JPS5838933B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/462,688 US3987215A (en) 1974-04-22 1974-04-22 Resist mask formation process

Publications (2)

Publication Number Publication Date
JPS50140064A true JPS50140064A (enExample) 1975-11-10
JPS5838933B2 JPS5838933B2 (ja) 1983-08-26

Family

ID=23837404

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50031250A Expired JPS5838933B2 (ja) 1974-04-22 1975-03-17 ハンドウタイデバイスノ セイゾウホウホウ

Country Status (5)

Country Link
US (1) US3987215A (enExample)
JP (1) JPS5838933B2 (enExample)
DE (1) DE2459156C3 (enExample)
FR (1) FR2268284B1 (enExample)
GB (1) GB1459988A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63165844A (ja) * 1986-12-27 1988-07-09 Terumo Corp レジスト材料
JP2012083727A (ja) * 2010-09-17 2012-04-26 Fujifilm Corp パターン形成方法

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4024293A (en) * 1975-12-10 1977-05-17 International Business Machines Corporation High sensitivity resist system for lift-off metallization
US4061829A (en) * 1976-04-26 1977-12-06 Bell Telephone Laboratories, Incorporated Negative resist for X-ray and electron beam lithography and method of using same
US4099062A (en) * 1976-12-27 1978-07-04 International Business Machines Corporation Electron beam lithography process
US4156745A (en) * 1978-04-03 1979-05-29 International Business Machines Corporation Electron sensitive resist and a method preparing the same
JPS5568630A (en) * 1978-11-17 1980-05-23 Chiyou Lsi Gijutsu Kenkyu Kumiai Pattern formation
US4609252A (en) * 1979-04-02 1986-09-02 Hughes Aircraft Company Organic optical waveguide device and method of making
US4330614A (en) * 1980-10-14 1982-05-18 International Business Machines Corporation Process for forming a patterned resist mask
US4415653A (en) * 1981-05-07 1983-11-15 Honeywell Inc. Method of making sensitive positive electron beam resists
JPS58187926A (ja) * 1982-04-28 1983-11-02 Toyo Soda Mfg Co Ltd 放射線ネガ型レジストの現像方法
DE3472574D1 (en) * 1983-10-14 1988-08-11 Hitachi Ltd Process for forming an organic thin film
US4591546A (en) * 1984-06-11 1986-05-27 General Electric Company Spin castable resist composition and use
DE3828551C3 (de) * 1988-08-23 1995-02-23 Du Pont Deutschland Verfahren zur Herstellung von flexographischen Druckformen
DE68926242T2 (de) 1988-08-23 1996-09-19 Du Pont Verfahren zur herstellung von flexographischen druckreliefs
US5354645A (en) * 1988-08-23 1994-10-11 E. I. Du Pont De Nemours And Company Process for the production of flexographic printing reliefs
JPH02273412A (ja) * 1989-04-14 1990-11-07 Sumitomo Electric Ind Ltd 架空配電線用被覆電線
TW395331U (en) * 1995-12-28 2000-06-21 Seiko Epson Corp Electronic machine
US6426177B2 (en) * 1998-08-11 2002-07-30 International Business Machines Corporation Single component developer for use with ghost exposure
CA2377081A1 (en) * 2002-03-15 2003-09-15 Quantiscript Inc. Method of producing an etch-resistant polymer structure using electron beam lithography
US20100068651A1 (en) * 2008-09-16 2010-03-18 Bradford David C Developing solution for flexographic printing plates
US9625815B2 (en) 2013-09-27 2017-04-18 Intel Corporation Exposure activated chemically amplified directed self-assembly (DSA) for back end of line (BEOL) pattern cutting and plugging

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2670287A (en) * 1951-01-20 1954-02-23 Eastman Kodak Co Photosensitization of polymeric cinnamic acid esters
US2670286A (en) * 1951-01-20 1954-02-23 Eastman Kodak Co Photosensitization of polymeric cinnamic acid esters
US2892712A (en) * 1954-04-23 1959-06-30 Du Pont Process for preparing relief images
GB1168445A (en) * 1966-05-26 1969-10-22 Howson Ltd W H Improvements in or relating to Presensitised Printing Plates
US3535137A (en) * 1967-01-13 1970-10-20 Ibm Method of fabricating etch resistant masks
SE361366B (enExample) * 1968-10-03 1973-10-29 Western Electric Co
US3679497A (en) * 1969-10-24 1972-07-25 Westinghouse Electric Corp Electron beam fabrication system and process for use thereof
US3779806A (en) * 1972-03-24 1973-12-18 Ibm Electron beam sensitive polymer t-butyl methacrylate resist

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63165844A (ja) * 1986-12-27 1988-07-09 Terumo Corp レジスト材料
JP2012083727A (ja) * 2010-09-17 2012-04-26 Fujifilm Corp パターン形成方法

Also Published As

Publication number Publication date
DE2459156B2 (de) 1981-05-21
US3987215A (en) 1976-10-19
DE2459156C3 (de) 1982-02-18
FR2268284B1 (enExample) 1981-09-25
GB1459988A (en) 1976-12-31
JPS5838933B2 (ja) 1983-08-26
DE2459156A1 (de) 1975-11-06
FR2268284A1 (enExample) 1975-11-14

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