JPS50139678A - - Google Patents
Info
- Publication number
- JPS50139678A JPS50139678A JP50045743A JP4574375A JPS50139678A JP S50139678 A JPS50139678 A JP S50139678A JP 50045743 A JP50045743 A JP 50045743A JP 4574375 A JP4574375 A JP 4574375A JP S50139678 A JPS50139678 A JP S50139678A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
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- H10P32/1406—
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- H10P32/171—
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- H10P95/00—
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US461111A US3876472A (en) | 1974-04-15 | 1974-04-15 | Method of achieving semiconductor substrates having similar surface resistivity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS50139678A true JPS50139678A (show.php) | 1975-11-08 |
Family
ID=23831272
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50045743A Pending JPS50139678A (show.php) | 1974-04-15 | 1975-04-14 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3876472A (show.php) |
| JP (1) | JPS50139678A (show.php) |
| DE (1) | DE2515431A1 (show.php) |
| FR (1) | FR2267638A1 (show.php) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS558019A (en) * | 1978-06-30 | 1980-01-21 | Nec Corp | Semiconductor device |
| JPS55148465A (en) * | 1979-05-09 | 1980-11-19 | Nec Corp | Manufacture of complementary mos integrated circuit device |
| JPS5630766A (en) * | 1979-08-20 | 1981-03-27 | Gen Instrument Corp | Method of manufacturing semiconductor device |
| JPS58148465A (ja) * | 1982-02-26 | 1983-09-03 | Mitsubishi Electric Corp | 半導体装置 |
| JPH01164062A (ja) * | 1988-11-18 | 1989-06-28 | Hitachi Ltd | 半導体装置の製造方法 |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4078947A (en) * | 1976-08-05 | 1978-03-14 | International Business Machines Corporation | Method for forming a narrow channel length MOS field effect transistor |
| US4409726A (en) * | 1982-04-08 | 1983-10-18 | Philip Shiota | Method of making well regions for CMOS devices |
| US4713329A (en) * | 1985-07-22 | 1987-12-15 | Data General Corporation | Well mask for CMOS process |
| JPH0797606B2 (ja) * | 1986-10-22 | 1995-10-18 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
| US6090671A (en) * | 1997-09-30 | 2000-07-18 | Siemens Aktiengesellschaft | Reduction of gate-induced drain leakage in semiconductor devices |
| CN112687538B (zh) * | 2020-12-18 | 2024-03-08 | 北京华卓精科科技股份有限公司 | 激光退火熔化深度确定方法、装置及电子设备 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1261723A (en) * | 1968-03-11 | 1972-01-26 | Associated Semiconductor Mft | Improvements in and relating to semiconductor devices |
| US3666567A (en) * | 1970-01-15 | 1972-05-30 | Hughes Aircraft Co | Method of forming an ohmic contact region in a thin semiconductor layer |
| US3793088A (en) * | 1972-11-15 | 1974-02-19 | Bell Telephone Labor Inc | Compatible pnp and npn devices in an integrated circuit |
-
1974
- 1974-04-15 US US461111A patent/US3876472A/en not_active Expired - Lifetime
-
1975
- 1975-04-09 DE DE19752515431 patent/DE2515431A1/de active Pending
- 1975-04-11 FR FR7511398A patent/FR2267638A1/fr not_active Withdrawn
- 1975-04-14 JP JP50045743A patent/JPS50139678A/ja active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS558019A (en) * | 1978-06-30 | 1980-01-21 | Nec Corp | Semiconductor device |
| JPS55148465A (en) * | 1979-05-09 | 1980-11-19 | Nec Corp | Manufacture of complementary mos integrated circuit device |
| JPS5630766A (en) * | 1979-08-20 | 1981-03-27 | Gen Instrument Corp | Method of manufacturing semiconductor device |
| JPS58148465A (ja) * | 1982-02-26 | 1983-09-03 | Mitsubishi Electric Corp | 半導体装置 |
| JPH01164062A (ja) * | 1988-11-18 | 1989-06-28 | Hitachi Ltd | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US3876472A (en) | 1975-04-08 |
| FR2267638A1 (show.php) | 1975-11-07 |
| DE2515431A1 (de) | 1975-10-23 |