FR2267638A1 - - Google Patents

Info

Publication number
FR2267638A1
FR2267638A1 FR7511398A FR7511398A FR2267638A1 FR 2267638 A1 FR2267638 A1 FR 2267638A1 FR 7511398 A FR7511398 A FR 7511398A FR 7511398 A FR7511398 A FR 7511398A FR 2267638 A1 FR2267638 A1 FR 2267638A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7511398A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2267638A1 publication Critical patent/FR2267638A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
FR7511398A 1974-04-15 1975-04-11 Withdrawn FR2267638A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US461111A US3876472A (en) 1974-04-15 1974-04-15 Method of achieving semiconductor substrates having similar surface resistivity

Publications (1)

Publication Number Publication Date
FR2267638A1 true FR2267638A1 (fr) 1975-11-07

Family

ID=23831272

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7511398A Withdrawn FR2267638A1 (fr) 1974-04-15 1975-04-11

Country Status (4)

Country Link
US (1) US3876472A (fr)
JP (1) JPS50139678A (fr)
DE (1) DE2515431A1 (fr)
FR (1) FR2267638A1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4078947A (en) * 1976-08-05 1978-03-14 International Business Machines Corporation Method for forming a narrow channel length MOS field effect transistor
JPS558019A (en) * 1978-06-30 1980-01-21 Nec Corp Semiconductor device
JPS55148465A (en) * 1979-05-09 1980-11-19 Nec Corp Manufacture of complementary mos integrated circuit device
CA1131797A (fr) * 1979-08-20 1982-09-14 Jagir S. Multani Fabrication d'un dispositif semiconducteur dans une couche epitaxiale simulee
JPS58148465A (ja) * 1982-02-26 1983-09-03 Mitsubishi Electric Corp 半導体装置
US4409726A (en) * 1982-04-08 1983-10-18 Philip Shiota Method of making well regions for CMOS devices
US4713329A (en) * 1985-07-22 1987-12-15 Data General Corporation Well mask for CMOS process
JPH0797606B2 (ja) * 1986-10-22 1995-10-18 株式会社日立製作所 半導体集積回路装置の製造方法
JPH01164062A (ja) * 1988-11-18 1989-06-28 Hitachi Ltd 半導体装置の製造方法
US6090671A (en) * 1997-09-30 2000-07-18 Siemens Aktiengesellschaft Reduction of gate-induced drain leakage in semiconductor devices
CN112687538B (zh) * 2020-12-18 2024-03-08 北京华卓精科科技股份有限公司 激光退火熔化深度确定方法、装置及电子设备

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1261723A (en) * 1968-03-11 1972-01-26 Associated Semiconductor Mft Improvements in and relating to semiconductor devices
US3666567A (en) * 1970-01-15 1972-05-30 Hughes Aircraft Co Method of forming an ohmic contact region in a thin semiconductor layer
US3793088A (en) * 1972-11-15 1974-02-19 Bell Telephone Labor Inc Compatible pnp and npn devices in an integrated circuit

Also Published As

Publication number Publication date
US3876472A (en) 1975-04-08
DE2515431A1 (de) 1975-10-23
JPS50139678A (fr) 1975-11-08

Similar Documents

Publication Publication Date Title
FR2271545B1 (fr)
JPS50139678A (fr)
FR2290027B1 (fr)
JPS50107927A (fr)
FI381574A (fr)
JPS50141114A (fr)
JPS50141244U (fr)
JPS501560U (fr)
AR199089A1 (fr)
AU495844B2 (fr)
JPS5340929Y2 (fr)
FI50292B (fr)
JPS5120938U (fr)
AU7474374A (fr)
JPS50139109U (fr)
CS162900B1 (fr)
DK261574A (fr)
JPS50112449A (fr)
JPS50112948U (fr)
JPS50123820A (fr)
JPS50129838A (fr)
JPS50137855U (fr)
JPS50140408U (fr)
BG20018A1 (fr)
BG26358A3 (fr)

Legal Events

Date Code Title Description
ST Notification of lapse